Molybdenum substitutional doping and its effects on phase transition properties in single crystalline vanadium dioxide thin film

Abstract

Molybdenum (Mo) doped vanadium dioxide thin films were synthesized using a Mo striped vanadium (V) target during pulsed laser ablation process. The film structure was characterized by high resolution x-ray diffraction, x-ray rocking curve and Rutherford backscattering/channeling measurements. The results show that the full width at half magnitude of the x-ray rocking curve is as narrow as 0.0074°, comparable to that of the (0001) sapphire substrate, 0.0042°, in this study. The ratio of the aligned-to-random backscattered yield reaches 5%, implying that the growth is that of the single crystalline epitaxy. The result of angular scans for both V and Mo atomic channelings reveals that Mo atoms successfully take sites of the V sublattice as a substitutional dopant. It has been noted that the degradation of the phase transition properties of the film upon doping is closely related to the conductivity in the semiconductor phase.

Properties of VO2 thin film prepared with precursor VO(acac)2

“…We deduce from this fact that the doping atoms will substitute the position of V atoms rather than enter the crystal interstices. This result is the same as that obtained by Rutherford backscattering (RBS)/channeling experimental study, [7] which also shows that the doping atoms take sites of the V sublattice as a substitution dopant. The monoclinic VO 2 has a distorted rutile structure.…”

Optical properties and structural phase transitions of W-doped VO2(R) under pressure

“…As is known, the R-to-M1 transition temperature (T c ) can be reduced by doping with transition metal, such as W 6+ , Mo 6+ , and Nb 5+ . [34][35][36][37][38][39] Among these, the most exciting prospective way would be the W-doping, which enabling precise and wide range control of T c , with a nearly linear reduction rate of 18.4-26 C/ at%, 34,[37][38][39] providing experimental base for high pressure research on VO 2 (R). Infrared spectroscopy, as a powerful tool to probe the dynamics of charge carriers, has been widely used in the high-pressure study on strong correlated materials.…”

Phase transition behavior in microcantilevers coated with M1-phase VO2 and M2-phase VO2:Cr thin films

“…V C 2012 American Institute of Physics 111, 104502-1 in comparison with those of the M 1 phase. 9,10 In fact, at least for samples grown on glass, the transition may be sharper for M 2 phase V 1Àx Cr x O 2 films than for pure VO 2 films. Nevertheless, due to the distinct crystal structure of these two lowtemperature phases, as well as because of the chromium substitution of vanadium ions in the lattice, other physical properties of V 1Àx Cr x O 2 could be significantly different from those of M 1 phase VO 2 .…”