Molecule-induced interface states dominate charge transport in Si–alkyl–metal junctions

Yu, Lam H.; Gergel-Hackett, Nadine; Zangmeister, Christopher D.; Hacker, Christina A.; Richter, Curt A.; Kushmerick, James G.

doi:10.1088/0953-8984/20/37/374114

Cited by 40 publications

(63 citation statements)

References 31 publications

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“…[68] In other work powerful techniques for characterizing Si MOMS were used and, in part, adapted. [69][70][71][72] Significant contributions have been made to transport modeling for several Si-molecule systems. [60,73,74] Interfacial monolayers affect the junction electrostatics by the interfacial dipole they create/change (see Sections 3.2, 3.3, and 4.2).…”

Section: Other Work On Molecular Electronics With Simentioning

confidence: 99%

“…Many functionalized groups, apart from alkenes (C¼ À C), [31,69,80,86] can adsorb on H-terminated Si, such as alkynes (C¼C), [87] alcohols, [69,88] aldehydes, [69] thiols (SH) [72,89] or Grignard reagents. [42,83,90] Aromatic molecules are mostly electrochemically adsorbed as diazonium salts [43,62,91] or by photochemical binding of ethynylbenzene.…”

Section: Other Siàr Bonds Siàoàcà Siàc¼càmentioning

confidence: 99%

“…There are specialized electrical characterization methods that provide finer interface details, such as inelastic electron tunneling spectroscopy (IETS) to reveal molecular vibrations involved in the transport, [71,72,98] noise analysis to learn about interface states [73] and ballistic emission electron microscopy (BEEM) to study spatial inhomogeneities for transport. [99,100] Here we focus on macroscopic transport characteristics such as current and capacitance measurements.…”

Section: Monolayer Characterizationmentioning

confidence: 99%

“…[163] The interpretation of V T in Si-based MOMS is further complicated by the voltage drop across the semiconductor (even for highly doped Si), leading to V T $0.15 eV. [72,163] Similarly, the complex J-V relations of MOMS can imply significant IETS (i.e., dI 2 /d 2 V) features that need not be due to interface states. [72] …”

Section: Extracting Insulator Parameters From Current-density-voltagementioning

confidence: 99%

“…[72,163] Similarly, the complex J-V relations of MOMS can imply significant IETS (i.e., dI 2 /d 2 V) features that need not be due to interface states. [72] …”

Section: Extracting Insulator Parameters From Current-density-voltagementioning

confidence: 99%

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Molecules on Si: Electronics with Chemistry

et al. 2009

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Basic scientific interest in using a semiconducting electrode in molecule‐based electronics arises from the rich electrostatic landscape presented by semiconductor interfaces. Technological interest rests on the promise that combining existing semiconductor (primarily Si) electronics with (mostly organic) molecules will result in a whole that is larger than the sum of its parts. Such a hybrid approach appears presently particularly relevant for sensors and photovoltaics. Semiconductors, especially Si, present an important experimental test‐bed for assessing electronic transport behavior of molecules, because they allow varying the critical interface energetics without, to a first approximation, altering the interfacial chemistry. To investigate semiconductor‐molecule electronics we need reproducible, high‐yield preparations of samples that allow reliable and reproducible data collection. Only in that way can we explore how the molecule/electrode interfaces affect or even dictate charge transport, which may then provide a basis for models with predictive power.To consider these issues and questions we will, in this Progress Report, review junctions based on direct bonding of molecules to oxide‐free Si. describe the possible charge transport mechanisms across such interfaces and evaluate in how far they can be quantified. investigate to what extent imperfections in the monolayer are important for transport across the monolayer. revisit the concept of energy levels in such hybrid systems.

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Section: Other Work On Molecular Electronics With Simentioning

confidence: 99%

Section: Other Siàr Bonds Siàoàcà Siàc¼càmentioning

confidence: 99%

Section: Monolayer Characterizationmentioning

confidence: 99%

Section: Extracting Insulator Parameters From Current-density-voltagementioning

confidence: 99%

“…[72,163] Similarly, the complex J-V relations of MOMS can imply significant IETS (i.e., dI 2 /d 2 V) features that need not be due to interface states. [72] …”

Section: Extracting Insulator Parameters From Current-density-voltagementioning

confidence: 99%

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