2002
DOI: 10.1063/1.1485961
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Molecular simulation study of nanoscale friction for alkyl monolayers on Si(111)

Abstract: An atomistic simulation study of a solid monolayer and trilayer of n-hexane on graphite

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Cited by 56 publications
(60 citation statements)
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References 61 publications
(44 reference statements)
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“…The results showed the dependence of frictional force and normal load, and furthermore, it was demonstrated that Amonton's law was valid for nano-scale friction. 54 Lan and Zhang (2004) reported on the interaction between nano-scale tip and thin film which was similar to the model investigated by Tupper et al 55 Zhang and Jiang (2002) also presented the frictional behavior of SAM molecules on Si (111) with respect to relative humidity. According to the simulation, friction coefficient of hydrophilic surface decreased from 0.5 to 0.2 as relative humidity increased from 15 to 80%.…”
Section: Numerical Analysismentioning
confidence: 59%
See 1 more Smart Citation
“…The results showed the dependence of frictional force and normal load, and furthermore, it was demonstrated that Amonton's law was valid for nano-scale friction. 54 Lan and Zhang (2004) reported on the interaction between nano-scale tip and thin film which was similar to the model investigated by Tupper et al 55 Zhang and Jiang (2002) also presented the frictional behavior of SAM molecules on Si (111) with respect to relative humidity. According to the simulation, friction coefficient of hydrophilic surface decreased from 0.5 to 0.2 as relative humidity increased from 15 to 80%.…”
Section: Numerical Analysismentioning
confidence: 59%
“…According to the simulation, friction coefficient of hydrophilic surface decreased from 0.5 to 0.2 as relative humidity increased from 15 to 80%. 56 Tanaka et al (2003) performed simulation on the frictional behavior of Perfluoropolyether (PFPE) coating with respect to normal load. The results showed that friction coefficient decreased from 0.8 to 0.2 when the normal pressure was increased from 0.1 x 10 9 to 2.0 x 10 9 Pa. Stick-slip behavior and fluctuation of frictional force at high load were also observed in the simulation.…”
Section: Numerical Analysismentioning
confidence: 99%
“…The parameters of the Tersoff potential used for silicon are presented in Table 1 [7]. Moreover, this table also involves the parameters σ and ε of the Lennard-Jones potential for silicon [9]. It should be emphasized that the Lennard-Jones interaction (repulsion) was taken into account only in the case where the atoms approach each other to a distance r < (R -D) when simulating the nanoassembly consisting of the icosahedron and the fullerene.…”
Section: The Molecular Dynamics Modelmentioning
confidence: 99%
“…The Tersoff potential parameters for silicon were reported by Tersoff; 167,168 the Lennard-Jones potential parameters were reported by Zhang and Jiang. 237 The repulsion (Lennard-Jones potential) was taken into account only if the atoms approached one another to inadmissibly short distances in the simulation of nanoassembly of an icosahedron and fullerene. The Tersoff potential is applicable to simulation of the systems with, on average, 3 ± 4 covalent bonds per atom.…”
Section: Stability and Thermal Size Effects Of Silicon Clusters Dmentioning
confidence: 99%