Molecular-scale charge trap medium for organic non-volatile memory transistors

Lee, Sang A; Kim, Dae Yoon; Jeong, Kwang Un; Bae, Sukang; Lee, Dong Su; Kim, Tae Wook

doi:10.1016/j.orgel.2015.08.020

Cited by 8 publications

(7 citation statements)

References 25 publications

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“…The O 1s spectra were fitted using a single peak at 533.7 eV. This value is in good agreement with earlier results when using Ag(111) as the substrate but 0.7 eV higher than reported for HAT on SiO 2 . This difference might originate from the different energy level alignments of HAT on these different substrates.…”

Section: Resultssupporting

confidence: 90%

“…The graphene/HAT ratio for the C 1s spectrum was determined by accounting for attenuation from the HAT layer(s), with the HAT thickness determined by the QMB during deposition (see the Supporting Information for further details). We found these peaks at 284.7 and 286.2 eV, respectively, in line with previously reported values for HAT adsorbed on Ag(111) and SiO 2 . The O 1s spectra were fitted using a single peak at 533.7 eV.…”

Section: Resultssupporting

confidence: 89%

“…We found these peaks at 284.7 and 286.2 eV, respectively, in line with previously reported values for HAT adsorbed on Ag(111) 41 and SiO 2 . 49 The O 1s spectra were fitted using a single peak at 533.7 eV. This value is in good agreement with earlier results when using Ag(111) as the substrate 41 but 0.7 eV higher than reported for HAT on SiO 2 .…”

Section: ■ Results and Discussionsupporting

confidence: 89%

“…This value is in good agreement with earlier results when using Ag(111) as the substrate 41 but 0.7 eV higher than reported for HAT on SiO 2 . 49 This difference might originate from the different energy level alignments of HAT on these different substrates. More details on the peak parameters can be found in Table 1 .…”

Section: Resultsmentioning

confidence: 99%

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Self-Assembly of a Triphenylene-Based Electron Donor Molecule on Graphene: Structural and Electronic Properties

et al. 2022

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In this study, we report on the self-assembly of the organic electron donor 2,3,6,7,10,11-hexamethoxytriphenylene (HAT) on graphene grown epitaxially on Ir(111). Using scanning tunneling microscopy and low-energy electron diffraction, we find that a monolayer of HAT assembles in a commensurate close-packed hexagonal network on graphene/Ir(111). X-ray and ultraviolet photoelectron spectroscopy measurements indicate that no charge transfer between the HAT molecules and the graphene/Ir(111) substrate takes place, while the work function decreases slightly. This demonstrates that the HAT/graphene interface is weakly interacting. The fact that the molecules nonetheless form a commensurate network deviates from what is established for adsorption of organic molecules on metallic substrates where commensurate overlayers are mainly observed for strongly interacting systems.

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Section: Resultssupporting

confidence: 90%

Section: Resultssupporting

confidence: 89%

Section: ■ Results and Discussionsupporting

confidence: 89%

Section: Resultsmentioning

confidence: 99%

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Self-Assembly of a Triphenylene-Based Electron Donor Molecule on Graphene: Structural and Electronic Properties

et al. 2022

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“…An organic/inorganic hybrid trap-based memory device with an Al 2 O 3 dielectric modified by self-assembled monolayer showed clear memory characteristics . A substituted triphenylene trap layer was sandwiched between poly(methyl methacrylate) (PMMA) and oxide to form a memory element . A variety of polymer compositions have been employed as chargeable dielectrics.…”

Section: Introductionmentioning

confidence: 99%

Synthesis, Fabrication, and Heterostructure of Charged, Substituted Polystyrene Multilayer Dielectrics and Their Effects in Pentacene Transistors

Alley¹,

Plunkett²,

Kale³

et al. 2016

Macromolecules

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Charge trapping and storage in polymer dielectrics can be harnessed to control semiconductor devices. Organic transistor (OFET) gate insulators affect bias stress and threshold voltage (V th), and charging them can preset the operating voltages and control bias stress. We describe a chemical design and film fabrication procedure for construction of stacks of polystyrene (PS) layers, each with arbitrary concentrations of potentially chargeable functional groups. Thermal cross-linking of benzocyclobutene subunits ensures layer integrity while keeping the layers free of polar functionality and small molecule byproducts. Neutron reflectivity (NR), scanning electron microscopy, and atomic force microscopy (AFM) showed that individual layer thicknesses varied systematically with polymer concentration in deposition solutions, and interfacial thicknesses ranged from 1.5 to 4 nm, independent of layer thickness, demonstrating formation of distinct layers with minimal roughness or intermixing. The PS-based materials were used as the sole gate dielectrics for pentacene OFETs. We compared V th before and after charging. Increased bias stress stability as evidenced by reduced V th shift was seen in devices with trilayer dielectrics with substituted PS as the middle layer compared to a dielectric made from unsubstituted PS. On the other hand, increased V th shift was seen in many devices with bilayer dielectrics made with substituted PS as the top layer. We attribute the decreased V th shift seen in trilayer devices to an increased dielectric polarization of the substituted PS in the middle layer that countered the charge trapping effect in the top layer. This demonstration establishes a method for utilizing vertical charge patterns for various electronics applications.

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Small‐Molecule‐Based Organic Field‐Effect Transistor for Nonvolatile Memory and Artificial Synapse

Ling

et al. 2019

Adv Funct Materials

210

200

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With the incorporation of tailorable organic electronic materials as channel and storage materials, organic field‐effect transistor (OFET)‐based memory has become one of the most promising data storage technologies for hosting a variety of emerging memory applications, such as sensory memory, storage memory, and neuromorphic computing. Here, the recent state‐of‐the‐art progresses in the use of small molecules for OFET nonvolatile memory and artificial synapses are comprehensively reviewed, focusing on the characteristic features of small molecules in versatile functional roles (channel, storage, modifier, and dopant). Techniques for optimizing the storage capacity, speed, and reliability of nonvolatile memory devices are addressed in detail. Insight into the use of small molecules in artificial synapses constructed on OFET memory is also obtained in this emerging field. Finally, the strategies of molecular design for improving memory performance in view of small molecules as storage mediums are discussed systematically, and challenges are addressed to shed light on the future development of this vital research field.

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Molecular-scale charge trap medium for organic non-volatile memory transistors

Cited by 8 publications

References 25 publications

Self-Assembly of a Triphenylene-Based Electron Donor Molecule on Graphene: Structural and Electronic Properties

Self-Assembly of a Triphenylene-Based Electron Donor Molecule on Graphene: Structural and Electronic Properties

Synthesis, Fabrication, and Heterostructure of Charged, Substituted Polystyrene Multilayer Dielectrics and Their Effects in Pentacene Transistors

Small‐Molecule‐Based Organic Field‐Effect Transistor for Nonvolatile Memory and Artificial Synapse

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