2011
DOI: 10.1021/ja2038886
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Molecular Lithography through DNA-Mediated Etching and Masking of SiO2

Abstract: We demonstrate a new approach to pattern transfer for bottom-up nanofabrication. We show that DNA promotes/inhibits the etching of SiO(2) at the single-molecule level, resulting in negative/positive tone pattern transfers from DNA to the SiO(2) substrate.

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Cited by 90 publications
(110 citation statements)
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References 25 publications
(32 reference statements)
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“…While an individual origami can serve as a template for up to 200 small devices, typically only a single multi-component electronic or optical device is constructed 10,12 . For many technological applications it would be desirable to organize origami into periodic arrays, for example, to allow wiring of electronic devices together, to create cooperative optical effects as seen in optical metasurfaces 17 , to create DNA 'etch masks' 18,19 or to enable easier extraction of single-molecule biophysical data 9,20 .…”
mentioning
confidence: 99%
“…While an individual origami can serve as a template for up to 200 small devices, typically only a single multi-component electronic or optical device is constructed 10,12 . For many technological applications it would be desirable to organize origami into periodic arrays, for example, to allow wiring of electronic devices together, to create cooperative optical effects as seen in optical metasurfaces 17 , to create DNA 'etch masks' 18,19 or to enable easier extraction of single-molecule biophysical data 9,20 .…”
mentioning
confidence: 99%
“…Specifically, the mechanism of the modulation effect of DNA has not been firmly established, although it was hypothesized that adsorption of water vapor on the surface plays an important role. 24 In addition, the kinetic behavior of the reaction has not been extensively explored, and consequently, the reaction conditions for pattern transfer have not been optimized for high resolution and contrast. As a result, the pattern transfer typically produced trenches (ridges) that are only 2−3 nm in depth (height).…”
Section: ■ Introductionmentioning
confidence: 99%
“…As a result, the pattern transfer typically produced trenches (ridges) that are only 2−3 nm in depth (height). 24 For practical applications, a much higher vertical contrast is needed. In a similar vein, the lateral resolution of the pattern transfer was limited to ∼17 nm.…”
Section: ■ Introductionmentioning
confidence: 99%
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“…In this way, DNA metallization is limited in its ability to construct nanoelectronic devices 40 . DNA nanostructures have also been used as shadow masks for metal deposition 41 and SiO 2 etching [42][43][44] . However, unprotected DNA masks degrade under plasma exposure, hindering their use for nanolithography.…”
mentioning
confidence: 99%