Molecular Limit of a Bulk Semiconductor:  Size Dependence of the “Band Gap” in CdSe Cluster Molecules

Soloviev, V. N.; Eichhöfer, Andreas; Fenske, Dieter; Banin, Uri

doi:10.1021/ja9940367

Cited by 272 publications

(250 citation statements)

References 16 publications

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“…Surprisingly, this dependence is valid for bulk crystals, QDs of CdSe and also for quasi-molecular particles of CdSe [41,42]. This fact may indicate that the intrinsic states similar to the states predicted by Efros et al [12] really exist in the nanoform of semiconductors.…”

Section: Deep-level Photoluminescence In Cdte and Cdse Qdsmentioning

confidence: 64%

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Defects in quantum dots of IIB–VI semiconductors

Babentsov

Сизов

2008

Opto-Electronics Review

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This review discusses the properties of structural defects in quantum dots of IIB–VI semiconductors. A great part of this knowledge has been developed in the last years and combined with the improvement in passivation technologies has contributed significantly to the nanotechnology.In this review we introduced the main characterization methods which are used for the study of defects in the nanoform of semiconductors, presented a short description of how native defects can influence the emission spectra, underlined the restrictions which the Auger and deep-level defect recombination imposes on the excitonic emission. We also highlighted the importance of the defect passivation associated with efficiency and photostability of devices.

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Section: Deep-level Photoluminescence In Cdte and Cdse Qdsmentioning

confidence: 64%

“…Nevertheless, an interaction with defects makes the observed emission bands wide and they are centered at less energy than can be ascribed to the transition between the lowest empty state and the highest filled exciton state [41,42].…”

Section: Effect Of Defects On Emission In Qds 221 Quasi-molecular mentioning

confidence: 96%

Defects in quantum dots of IIB–VI semiconductors

Babentsov

Сизов

2008

Opto-Electronics Review

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“…Several experimental techniques have been used to address the development of the band gap in nanocrystalline CdSe [3,5,[11][12][13] (particularly UV-Visible absorption spectroscopy because it also provides a diagnostic of QD particle size and size dispersion), but the band gap represents only the convolution of the VB and CB and does not allow for an independent treatment of these edges. The application of alternative methods is essential, therefore, for successful mapping of the electronic structure in CdSe QDs.…”

Section: Pacs Numbersmentioning

confidence: 99%

Experimental Observation of Quantum Confinement in the Conduction Band of CdSe Quantum Dots

et al. 2007

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“…A semiconductor nanocrystal with dimension of <2 nm is typically synthesized via a chemical route [1][2][3]. Mechanochemical synthesis route is relatively new compared with chemical method and is a nonequilibrium method that employs forced chemical mixing to produce nanostructure materials [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

Pinned Luminescence Emission and Absorbance Band from Ultrasmall Ball-Milled Cd_0.3Zn_0.7Se Nanocrystals

Muh’d

Talib

Zainal

et al. 2017

Journal of Nanomaterials

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We report the pinned absorbance and emission spectra of Cd 0.3 Zn 0.7 Se nanocrystals synthesized via mechanical alloying. The first emission peaks of Cd 0.3 Zn 0.7 Se nanocrystals milled for 5 and 10 h are observed at 3.36 eV, while the absorbance spectra of those milled for 10 and 20 h are observed at 4.47 eV. The emission peaks of nanocrystals milled for 5, 10, and 20 h have broad emissions centered at 2.90, 2.88, and 2.92 eV, respectively. Transmission electron microscopy histogram shows that each nanocrystal size distribution has a single population maxima of <2 nm. In addition, the center of each size distribution shifts toward the ultrasmall particles upon continuous milling. Particle sizes (d) of 0.73 nm are calculated from the first excitonic peaks of the pinned absorbance bands through the semiempirical sizing equation. The continuous reduction in particle sizes increases the surface-to-volume ratios of the nanocrystals. This increase eventually results in an increase in the surface states that translate into low photoluminescence intensity of pinned emission.

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Molecular Limit of a Bulk Semiconductor: Size Dependence of the “Band Gap” in CdSe Cluster Molecules

Cited by 272 publications

References 16 publications

Defects in quantum dots of IIB–VI semiconductors

Defects in quantum dots of IIB–VI semiconductors

Experimental Observation of Quantum Confinement in the Conduction Band of CdSe Quantum Dots

Pinned Luminescence Emission and Absorbance Band from Ultrasmall Ball-Milled Cd_0.3Zn_0.7Se Nanocrystals

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Molecular Limit of a Bulk Semiconductor: Size Dependence of the “Band Gap” in CdSe Cluster Molecules

Cited by 272 publications

References 16 publications

Defects in quantum dots of IIB–VI semiconductors

Defects in quantum dots of IIB–VI semiconductors

Experimental Observation of Quantum Confinement in the Conduction Band of CdSe Quantum Dots

Pinned Luminescence Emission and Absorbance Band from Ultrasmall Ball-Milled Cd0.3Zn0.7Se Nanocrystals

Contact Info

Product

Resources

About

Pinned Luminescence Emission and Absorbance Band from Ultrasmall Ball-Milled Cd_0.3Zn_0.7Se Nanocrystals