2002
DOI: 10.1016/s0169-4332(02)00187-3
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Molecular interaction of ozone with silicon nanocrystallites: a new method to excite visible luminescence

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Cited by 9 publications
(4 citation statements)
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“…Such a model of the backbond oxidation is in accordance with measurements of oxidized surfaces [53]. For Si NCs the backbond oxidation without destroying the Si-H surface bonds is supported by highresolution electron energy loss spectroscopy (HREELS) [53] and infrared (IR) absorption measurements [54]. After the oxygen insertion in the Si-Si bonds, large atomic forces and stresses arise in the system due to the short Si-O bond lengths of about 1.17 Å.…”
Section: Modelling Of Nanocrystals Capping Shells and Surface Termisupporting
confidence: 71%
“…Such a model of the backbond oxidation is in accordance with measurements of oxidized surfaces [53]. For Si NCs the backbond oxidation without destroying the Si-H surface bonds is supported by highresolution electron energy loss spectroscopy (HREELS) [53] and infrared (IR) absorption measurements [54]. After the oxygen insertion in the Si-Si bonds, large atomic forces and stresses arise in the system due to the short Si-O bond lengths of about 1.17 Å.…”
Section: Modelling Of Nanocrystals Capping Shells and Surface Termisupporting
confidence: 71%
“…The effect is permanent, since no PL intensity recovery in the 5 days following the UV-ozone treatment was detected, see the area with a shaded background in figure 7(a). Ozone is known to oxidize Si-NCs, reducing their size, therefore causing a blue-shift of the PL peak, for the case of the QC effect [13,19,25]. Surprisingly, in our case, the ozone treatment resulted in a pronounced red-shift of the PL peak position, as can be seen from figure 7(b).…”
Section: Resultssupporting
confidence: 44%
“…During the experiment the samples were placed in front of a deuterium UV lamp, which stably generated approximately 1 ppm ozone in the proximity to the sample surface. Sometimes, after the oxidation-cycle, samples were held in a HF(50%) vapour for several minutes in order to refresh the Si surface by etching away SiO x , similar to [19].…”
Section: Experimental Techniquesmentioning
confidence: 99%
“…[1] Our data on the effect of ozone on nanostructured Si layers gave evidence in favor of a unified mechanism of radiative relaxation in both photo-and ozone-induced luminescence. [2] However, previous results were obtained on thick (> 5 mm) layers of nanostructured Si. For such thicknesses, the effect of in-depth inhomogeneity is observed owing to the electrochemical method of preparation.…”
Section: Introductionmentioning
confidence: 92%