Molecular-fastener effects on transport property of TTC –TTF field-effect transistors

Ukai, Sota; Igarashi, Sin; Nakajima, Minoru; Marumoto, Kazuhiro; Itô, Hiroshi; Kuroda, S.; Nishimura, Kazukuni; Enomoto, Y.; Saito, Gunzi

doi:10.1016/j.colsurfa.2006.01.039

Cited by 12 publications

(13 citation statements)

References 11 publications

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“…Other than those fabricated by drop-casting [38], thin-film devices based on TTC 18 -TTF (39) fabricated by zone-casting method showed clear linear and saturation regions, and much higher FET performance, with the mobility up to 0.08 cm 2 /Vs and on/off ratio on the order of 10 4 [39]. The improved FET performance of devices based on 39 might be attributed to its improved high-quality thin films obtained by zone-casting technique.…”

confidence: 99%

“…Since the neutral single crystals of tetrakis(alkylthio)-tetrathiafulvalenes (TTC n -TTF) showed rather high conductivity of 10 -7 -10 -5 S/cm due to the fastener-effect of long alkyl chains [45], their FET characteristics in thin films are promising. Ukai et al investigated the transport property of OFETs based on TTC n -TTF derivatives with n = 8, 14, 18 (37)(38)(39) [38]. TTC n -TTF was drop-casted on the prefabricated FET structure from its saturated chloroform solution, affording the BC device geometry.…”

confidence: 99%

“…Scheme 6 shows TTF derivatives (3, 36-49) used for solution-processed thin-film OFETs. Several solution-processed techniques were applied for fabricating their thin-film devices, such as drop-casting [37,38], zone-casting [39,40], and spin-coating [41][42][43]. FET characteristics of thin-film devices based on TTF derivatives (3, 36-49) are summarized in Table 3.…”

Section: Ttf Derivatives For Solution-processed Thin-film Ofetsmentioning

confidence: 99%

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Organic field-effect transistors based on tetrathiafulvalene derivatives

Gao

Qiu

Liu

et al. 2008

Pure and Applied Chemistry

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In recent years, tetrathiafulvalene (TTF) and its derivatives have been used as semiconducting materials for organic field-effect transistors (OFETs). In this review, we summarize the recent progress in the field of TTF-based OFETs. We introduce the structure and operation of OFETs, and focus on TTF derivatives used in OFETs. TTF derivatives used in OFETs can be divided into three parts by the semiconductor's morphology and the device fabrication technique: (1) TTF derivatives used for single-crystal OFETs, (2) TTF derivatives used for vacuum-deposited thin-film OFETs, and (3) TTF derivatives used for solutionprocessed thin-film OFETs. The single-crystal OFETs based on TTF derivatives were fabricated by drop-casting method and showed high performance, with the mobility up to 1.4 cm 2 /Vs. The vacuum-deposited thin-film OFETs based on TTF derivatives were well developed, some of which have shown high performance comparable to that of amorphous silicon, with good air-stability. Although the mobilities of most solution-processed OFETs based on TTF derivatives are limited at 10 -2 cm 2 /Vs, the study on solution-processable TTF derivatives and their devices are promising, because of their low-cost, large-area-coverage virtues. The use of organic charge-transfer (OCT) compounds containing TTF or its derivatives in OFETs is also included in this review.

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confidence: 99%

Section: Ttf Derivatives For Solution-processed Thin-film Ofetsmentioning

confidence: 99%

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Organic field-effect transistors based on tetrathiafulvalene derivatives

Gao

Qiu

Liu

et al. 2008

Pure and Applied Chemistry

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“…An illustrative example of such an approach is the work by Saito and collaborators, where they investigated the OFET properties of a family of TTF derivatives bearing four alkylthio groups with different chain lengths, namely TTF‐4SC n with n = 8, 14, and 18. These systems were previously reported to exhibit a high conductivity for n ≥ 4 due to the strong interchain interaction between the alkylchains that results in a fastener effect of the TTF moieties .…”

Section: Tuning Crystal Structure and Polymorphismmentioning

confidence: 99%

Tuning Crystal Ordering, Electronic Structure, and Morphology in Organic Semiconductors: Tetrathiafulvalenes as a Model Case

Pfattner

Bromley

Rovira

et al. 2015

Adv Funct Materials

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Tetrathiafulvalenes (TTFs) are an appealing class of organic small molecules giving rise to some of the highest performing active materials reported for organic field effect transistors (OFETs). Because they can be easily chemically modified, TTF‐derivatives are ideal candidates to perform molecule–property correlation studies and, especially, to elucidate the impact of molecular and crystal engineering on device performance. A brief introduction into the state‐of‐the‐art of the field‐effect mobility values achieved with TTF derivatives employing different fabrication techniques is provided. Following, structure–performance relationships are discussed, including polymorphism, a phenomenon which is crucial to control for ensuring device reproducibility. It is also shown that chemical modification of TTFs has a strong influence on the electronic structure of these materials, affecting their stability as well as the nature of the generated charge carriers, leading to devices with p‐channel, n‐channel, or even ambipolar behaviour. TTFs have also shown promise in other applications, such as phototransistors, sensors, or as dopants or components of organic metal charge transfer salts used as source–drain contacts. Overall, TTFs are appealing building blocks in organic electronics, not only because they can be tailored to perform fundamental studies, but also because they offer a wide spectrum of potential applications.

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“…The hydrophobic interaction plays an essential role in biological molecular assembly structure fabrication, including the flexible bilayer membrane of fatty acids with membrane proteins. − With sufficient length of the alkyl chains, they can self-assemble through multiple van der Waals interactions, which can form specific nanoscale or microscale molecular assemblies, including micelles, vesicles, and Langmuir–Blodgett films. − The association and dissociation energy of these structures becomes comparable to the thermal energy around room temperature ( k B T ∼ 0.023 eV) by addition of the outer bias energy, which controls the freedom of motion for the partial structural units in the molecular assembly. − Structural construction–destruction processes under the flow of the outer energy generate a dispersive molecular assembly structure in a biological system. , In the field of functional molecular assembly, the hydrophobic interaction between alkyl chains has been utilized to fabricate a tight π-stacking structure with alkylthio (C n H 2 n +1 S−)-substituted tetrathiafulvalene (TTF) molecules, which has been known as the molecular fastener effect. , Longer alkyl chains can effectively fasten themselves via the π-stacking structure of TTF, resulting in higher electrical conductivity, with an increase in the n -number. Therefore, manipulating the multiple hydrophobic interactions between alkyl chains is a useful approach for controlling intermolecular interactions, molecular assembly structures, and physical properties.…”

Section: Introductionmentioning

confidence: 99%

Electrostatic versus van der Waals Interactions in an n-Type Semiconducting Dianionic Naphthalenediimide Derivative with C_nH_2n+1NH₃⁺ (n = 1–16)

et al. 2021

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Dianionic bis(benzenesulfonate)-naphthalenediimide (BSNDI 2− ) formed simple 2:1 cation−anion salts (Cn-BSNDIs) by the combination of two molar alkylammonium (C n H 2n+1 NH 3 + ) in which the alkyl-chain length (n) was systematically changed from 1 to 16 to study the n-dependent phase transition behavior, molecular assembly structure, dielectric response, and transient conductivity of a series of Cn-BSNDI salts. The electrostatic cation−anion and van der Waals interactions in the molecular assembly compensated for each other, where the elongation of the −C n H 2n+1 chain increased the energy contribution from van der Waals interactions. The crystal lattices of short-chain Cn-BSNDIs (n = 1−4) were rigid and static without temperature-and frequency-dependent dielectric responses. By contrast, large dielectric responses were observed in Cn-BSNDI salts with intermediate n = 5−8 because of the motional freedom of the cation−anion arrangement and thermal fluctuation of the flexible alkyl chains. In the case of Cn-BSNDIs with n = 9−16, the thermal fluctuation of long alkyl chains primarily contributed to the dielectric responses. The one-dimensional intermolecular interactions of Cn-BSNDI salts (n = 1 and 2) showed a dimensional crossover to the two-dimensional C3-BSNDI, and the transient conductivity (ϕΣμ) of C3-BSNDI and C4-BSNDI thin films was much larger than those of the other salts. The rigid crystal lattice of Cn-BSNDIs (n = 3 and 4) became dynamic when n ≥ 5, with a successive phase transition and an even−odd effect in the dielectric constants and ϕΣμ values. The observed interplay of van der Waals and electrostatic interaction allows the dynamic tuning of electronic properties with identical molecular cores as represented by their dielectric response and transient conductivity.

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Molecular-fastener effects on transport property of TTC –TTF field-effect transistors

Cited by 12 publications

References 11 publications

Organic field-effect transistors based on tetrathiafulvalene derivatives

Organic field-effect transistors based on tetrathiafulvalene derivatives

Tuning Crystal Ordering, Electronic Structure, and Morphology in Organic Semiconductors: Tetrathiafulvalenes as a Model Case

Electrostatic versus van der Waals Interactions in an n-Type Semiconducting Dianionic Naphthalenediimide Derivative with C_nH_2n+1NH₃⁺ (n = 1–16)

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Molecular-fastener effects on transport property of TTC –TTF field-effect transistors

Cited by 12 publications

References 11 publications

Organic field-effect transistors based on tetrathiafulvalene derivatives

Organic field-effect transistors based on tetrathiafulvalene derivatives

Tuning Crystal Ordering, Electronic Structure, and Morphology in Organic Semiconductors: Tetrathiafulvalenes as a Model Case

Electrostatic versus van der Waals Interactions in an n-Type Semiconducting Dianionic Naphthalenediimide Derivative with CnH2n+1NH3+ (n = 1–16)

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Electrostatic versus van der Waals Interactions in an n-Type Semiconducting Dianionic Naphthalenediimide Derivative with C_nH_2n+1NH₃⁺ (n = 1–16)