2022
DOI: 10.1016/j.diamond.2022.109541
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Molecular dynamics study on grinding mechanism of polycrystalline silicon carbide

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Cited by 17 publications
(2 citation statements)
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“…MD simulations can reproduce transient removal characteristics during chip grinding, which is difficult to capture in a grinding experiment, and quantitatively analyze the damage accumulation and material removal behaviors induced by abrasive machining [49][50][51]. These simulations can elucidate the influence of coupling actions of abrasive particles on the stress distribution [52], phase transition [53], grinding force [54], and coefficient of friction [55] during grinding process, which can provide a beneficial guidance for the optimization of grinding processes. Nevertheless, however, no MD simulations of doublegrit grinding of GaN semiconductors have been reported thus far.…”
Section: Introductionmentioning
confidence: 99%
“…MD simulations can reproduce transient removal characteristics during chip grinding, which is difficult to capture in a grinding experiment, and quantitatively analyze the damage accumulation and material removal behaviors induced by abrasive machining [49][50][51]. These simulations can elucidate the influence of coupling actions of abrasive particles on the stress distribution [52], phase transition [53], grinding force [54], and coefficient of friction [55] during grinding process, which can provide a beneficial guidance for the optimization of grinding processes. Nevertheless, however, no MD simulations of doublegrit grinding of GaN semiconductors have been reported thus far.…”
Section: Introductionmentioning
confidence: 99%
“…One example of abrasive machining carried out in this way is the grinding processes used in the manufacture of dies [2] or crankshafts [3]. Both types of grinding operations require tools of different designs (abrasive grains [4][5][6], bonds [7], structures [8], hardness [9], susceptibility [10], and elasticity [11]) and different technological parameters.…”
Section: Introductionmentioning
confidence: 99%