Molecular dynamics simulations of AlN deposition on GaN substrate

Zhang, Libin; Yan, Han; Sun, Kuan; Liu, Sheng; Gan, Zhiyin

doi:10.1080/00268976.2019.1587025

Cited by 14 publications

(2 citation statements)

References 42 publications

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“…Zhang et Al. [13] used MD method to explore the effects of GaN substrate surface, growth temperature and N:Al flux ratio on the surface morphology and crystallinity of AlN films. Although Liu et al [14] simulated the epitaxial growth of GaN film on AlN substrate and studied the effects of different Ga:N flux ratio and growth temperature on the crystal structure of the film, different substrate surface is an important factor affecting the growth of the film.…”

Section: Molecular Dynamics Simulation Of Thin Film Growthmentioning

confidence: 99%

Research Status of GaN Film Growth

2023

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This paper introduces the important application fields, growth methods and molecular dynamics research methods of GaN. Due to the lack of homogeneous substrate, GaN film growth is limited and the crystal quality is poor. At present, heteroepitaxial GaN has some problems, such as high fault density, large residual stress and uneven thickness. The intermediate AlN buffer layer is used to reduce the lattice mismatch and thermal expansion coefficient mismatch between GaN film and substrate. Meanwhile, the growth mechanism of GaN is not well understood. In addition, molecular dynamics simulation is an effective tool to study GaN growth, which can reveal the growth process of GaN film and the evolution of dislocation from a microscopic perspective. The research of this work can provide reference for the next step of GaN film growth.

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Section: Molecular Dynamics Simulation Of Thin Film Growthmentioning

confidence: 99%

Research Status of GaN Film Growth

2023

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“…One of the goals of this Special Issue has been to address the treatment of nuclear motions of clusters. Related applications include, for instance, the accurate description of highly excited (electronic as well as vibrational and rotational, bound and unbound) states of molecules and weakly bound aggregated systems as well as the dynamics of molecules adsorbed on nanostructures [17][18][19].…”

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confidence: 99%