Molecular-dynamics simulation of the energetic deposition of Ag thin films

Gilmore, C. M.; Sprague, J.A.

doi:10.1103/physrevb.44.8950

Cited by 117 publications

(32 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Bombardment by ions in this energy range is mainly expected to affect the topmost atomic layer enhancing adatom diffusion, effectively leading to a larger diffusivity [41,42]. This should result in a lower island density and lower coalescence times both resulting in a larger film thickness at the completion of Increasing E p from 20 mJ to 1.20 J at a constant pulsing frequency results in an increase of the mean energy of the Ag + ions from ~4 eV with a relatively narrow IEDF to ~20 eV with a relatively long high energy tail (as seen in Figure 7).…”

Section: Discussionmentioning

confidence: 99%

Time-domain and energetic bombardment effects on the nucleation and coalescence of thin metal films on amorphous substrates

Magnfält¹,

Elofsson²,

Abadias³

et al. 2013

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Section: Discussionmentioning

confidence: 99%

Time-domain and energetic bombardment effects on the nucleation and coalescence of thin metal films on amorphous substrates

Magnfält¹,

Elofsson²,

Abadias³

et al. 2013

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

“…At such temperatures, ordered growth can still occur [90] because of short-range nonthermal motion of newly deposited species to increase their coordination [91,92]. Examples of this effect are transient mobility [91][92][93], ballistic impact [94,95], and downward funnelling [96]. The physical basis of the WV model [61] is that the condensation energy of deposited particles is dissipated by relaxation to a nearby site that maximizes its bonding coordination.…”

Section: Wolf-villain Modelmentioning

confidence: 99%

Renormalization of stochastic lattice models: Epitaxial surfaces

Haselwandter

Vvedensky

2008

Phys. Rev. E

View full text Add to dashboard Cite

We present the application of a method [Phys. Rev. E 76, 041115 (2007)] for deriving stochastic partial differential equations from atomistic processes to the morphological evolution of epitaxial surfaces driven by the deposition of new material. Although formally identical to the one-dimensional (1D) systems considered previously, our methodology presents substantial new technical issues when applied to two-dimensional (2D) surfaces. Once these are addressed, subsequent coarse-graining is accomplished as before by calculating renormalization-group (RG) trajectories from initial conditions determined by the regularized atomistic models. Our applications are to the EdwardsWilkinson (EW) model [Proc. Roy. Soc. London Ser. A 381, 17 (1982)], the Wolf-Villain (WV) model [Europhys. Lett. 13, 389 (1990)], and a model with concurrent random deposition and surface diffusion. With our rules for the EW model no appreciable crossover is obtained for either 1D or 2D substrates. For the 1D WV model, discussed previously, our analysis reproduces the crossover sequence known from kinetic Monte Carlo (KMC) simulations, but for the 2D WV model, we find a transition from smooth to unstable growth under repeated coarse-graining. Concurrent surface diffusion does not change this behavior, but can lead to extended transient regimes with kinetic roughening. This provides an explanation of recent experiments on Ge(001) with the intriguing conclusion that the same relaxation mechanism responsible for ordered structures during the early stages of growth also produces an instability at longer times that leads to epitaxial breakdown. The RG trajectories calculated for concurrent random deposition and surface diffusion reproduce the crossover sequences observed with KMC simulations for all values of the model parameters, and asymptotically always approach the fixed point corresponding to the equation proposed by Villain [J. Phys. I 1, 19 (1991)] and by Lai and Das Sarma [Phys. Rev. Lett. 66, 2899 (1991)]. We conclude with a discussion of the application of our methodology to other growth settings.

show abstract

“…The mechanical properties of thin films are often tested by measuring the change of substrate curvature induced by deposited film [10][11][12][13]. Molecular dynamic simulation is very useful for the study of the behaviour of thin films at a microscopic level [14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Evolution of stress and structure in Cu thin films

Chocyk

Zientarski

Prószyński

et al. 2005

Cryst. Res. Technol.

View full text Add to dashboard Cite

Evolution of stresses developing in Cu thin films during and after deposition by thermal evaporation in UHV system is studied. Thin films were deposited on 100 µm thick Si substrate at room temperature. Deposition rates for the films were changed between 0.2 Å/s and 2.0 Å/s, while the total thickness was changed from 7.7 nm to 155 nm. Deformation analysis of crystalline lattice and microstructure was performed by x-ray diffraction measurements (θ-2θ scans, "sin 2 ψ" method). The surface morphology of film was studied by atomic force microscopy. The average stress in the films was determined by measuring the radius of curvature of samples. For thin films three stages of stress evolution (compressive, tensile and compressive) were we distinguished. This behavior is characteristic for materials with a Volmer-Weber mode. A three-dimensional molecular dynamics technique was applied for simulating the stress calculation during thin film growth. The results obtained from the simulation are consistent with the experimental results.

show abstract

Molecular-dynamics simulation of the energetic deposition of Ag thin films

Cited by 117 publications

References 21 publications

Time-domain and energetic bombardment effects on the nucleation and coalescence of thin metal films on amorphous substrates

Time-domain and energetic bombardment effects on the nucleation and coalescence of thin metal films on amorphous substrates

Renormalization of stochastic lattice models: Epitaxial surfaces

Evolution of stress and structure in Cu thin films

Contact Info

Product

Resources

About