Molecular dynamics simulation of silicon sputtering: sensitivity to the choice of potential

Thijsse, Barend J.; Klaver, T.P.C.; Haddeman, Edwin F. C.

doi:10.1016/j.apsusc.2004.03.207

Cited by 23 publications

(13 citation statements)

References 25 publications

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“…Humbird et al 3 presented MD simulations of energetic Ar + ions ͑20-200 eV͒ interacting with initially crystalline silicon, with quantitative comparison to experiment. Similar simulations with ions bombardment to Si were also performed by Thijsse et al 4 and Rosso et al…”

Section: Introductionsupporting

confidence: 50%

Surface deformation of Ar+ ion collision process via molecular dynamics simulation with comparison to experiment

Satake¹,

Momota

Yamashina

et al. 2009

Journal of Applied Physics

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Molecular dynamics simulations of Ar ion collision on a Si surface using an optimized potential function were carried out in the case of the acceleration voltages of 50 keV for Ar ions. A hillock structure was formed by the Ar ion impact on the Si surface. The height of the structure calculated by the simulations corresponded to those of the experiments. The height of the structure was found to be proportional to the fluence of Ar ions. The amorphous structural region was expanded by the progress of the interface region between the amorphous structure and the crystalline structure with increasing the fluence in the depth direction.

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Section: Introductionsupporting

confidence: 50%

Surface deformation of Ar+ ion collision process via molecular dynamics simulation with comparison to experiment

Satake¹,

Momota

Yamashina

et al. 2009

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Allowing enough time between bombardment events to reproduce the projectile flux used in experiment is computationally unfeasible due to the picosecond timescale of the simulations. Thus, after each bombardment event the system is equilibrated via a velocity scaling stochastic layer until a point when the energy of the system has relaxed to a corresponding temperature of 300 K [12]. This permits the gallium impacts to be performed much faster while still allowing relaxation to occur.…”

Section: Computational Detailsmentioning

confidence: 99%

“…Specifically, two identical substrates consisting of Si(1 0 0) are repeatedly bombarded with either 30-or 2-keV gallium particles which are randomly arranged in a circular beam geometry. After each particle impinges the surface, the system is allowed to relax before the subsequent bombardment event [12]. A protocol has been developed to computationally remove the incident particles that will ultimately implant deep in the sample.…”

Section: Introductionmentioning

confidence: 99%