Molecular dynamics simulation of laser-induced interconnections of silver nanowires

Huang, Chenchen; Yang, Cheng; Yin, Hang; Wei, Fan

doi:10.1080/00150193.2020.1761705

Cited by 2 publications

(2 citation statements)

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“…where q i(j) is the charge of the i(j)-th atom, q O = −0.5q Si = −0.65e, A ij and B ij are parameters of the Lennard-Jones potential for the van der Waals interaction, r ij is the interatomic distance, A SiO = 4.6•× 10 −8 kJ•(nm) 12 /mol, A SiSi = A OO = 1.5•× 10 −6 kJ•(nm) 12 /mol, B SiO = 4.2•× 10 −3 kJ•(nm) 6 /mol, and B SiSi = B OO = 5•× 10 −5 kJ•(nm) 6 /mol. The step of the molecular dynamic simulation is taken equal to 0.5 fs.…”

Section: Simulation Methodsmentioning

confidence: 99%

“…Initially, the models describing LID were based on continual approaches including heat equations, kinetic equation, Boltzman equation, and so on [1,[7][8][9]. In recent decades, due to significant progress in high-performance computing, it has become possible to apply the methods of atomistic simulation for studying the laser radiation interaction with condensed matter [10][11][12]. In the case of femtosecond laser pulses, for this simulation, the quantum methods are required to take into account the probabilities of many-photon absorption, electron tunneling in a strong electric field, and other quantum processes affecting LID [4].…”

Section: Introductionmentioning

confidence: 99%

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Molecular Dynamics Simulation of Laser Induced Heating of Silicon Dioxide Thin Films

2021

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The full-atomistic classical molecular dynamics simulation of the laser heating of silicon dioxide thin films is performed. Both dense isotropic films and porous anisotropic films are investigated. It is assumed that heating occurs due to nodal structural defects, which are currently considered one of the possible causes of laser induced damage. It is revealed that heating to a temperature of 1000 K insignificantly affects the structure of the films and the concentration of point defects responsible for the radiation absorption. An increase in the heating temperature to 2000 K leads to the growth of the concentration of these defects. For “as deposited” films, this growth is greater in the case of a porous film deposited at a high deposition angle. Annealing of film reduces the difference in the concentration of laser induced defects in dense and porous films. The possible influence of optical active defects arising due to heating on the laser induced damage threshold is discussed.

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Section: Simulation Methodsmentioning

confidence: 99%