Molecular Dynamics Simulation of AlN Deposition: Effect of N:Al Flux Ratio

Abstract

In order to study the optimal N:Al flux ratio during the deposition of AlN, the effects of N:Al flux ratio on the crystal quality (crystallinity and surface roughness) of homoepitaxial AlN are investigated. The growth temperature ranges from 1600 K to 2000 K with an increment of 200 K. When the N:Al flux ratios are changed from 0.8 to 2.8, the good crystallinity is obtained at 1600 K with the N:Al flux ratio of 2.4, while it is obtained at 1800 K with the N:Al flux ratio of 2.4 and with the N:Al flux ratio of 2.0 at 2000 K. The crystallinity at 1800 K with N:Al flux ratio of 2.4 stands out among these three. At 1800 K with varied N:Al flux ratios, the minimum surface roughness is also obtained at the N:Al flux ratio of 2.4. Further more, the distribution of deposited Al atoms at 1800 K is explored, the result shows that the uniform distribution of Al atoms appears at N:Al flux ratio of 2.4.