Abstract:In this paper, we present a molecular dynamics (MD) study on a low-energy ion implantation process for nanoscale CMOS (Complementary Metal Oxide Semiconductor) processes. To model the profiles of interstitials and vacancies, the recoil interaction approximation (RIA) was employed, while the kinetic Monte Carlo (KMC) approach was used for modeling the dynamic annealing effect between cascades. The simulation results performed for as-implanted boron profiles were compared with the results of the binary collision… Show more
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