Molecular Doping Control at a Topological Insulator Surface: F4-TCNQ on Bi2Se3

Wang, Jingying; Hewitt, Andrew; Kumar, R. Krishna; Boltersdorf, Jonathan; Guan, Tianwang; Hunte, Frank; Maggard, Paul A.; Brom, Joseph E.; Redwing, Joan M.; Dougherty, Daniel B.

doi:10.1021/jp412690h

Cited by 11 publications

(11 citation statements)

References 29 publications

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“…Wang et al demonstrated the electron‐withdrawing doping effect of F4‐TCNQ molecules on the n‐type Bi 2 Se 3 surface . Electrons were extracted from the Bi 2 Se 3 to the F4‐TCNQ molecules, resulting in an improvement of the Bi 2 Se 3 work function and a shift of the energy bands toward E F .…”

Section: Sctd In 2d Nanostructuresmentioning

confidence: 99%

Surface Charge Transfer Doping of Low‐Dimensional Nanostructures toward High‐Performance Nanodevices

Zhang¹,

Shao²,

He³

et al. 2016

Advanced Materials

151

139

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Device applications of low-dimensional semiconductor nanostructures rely on the ability to rationally tune their electronic properties. However, the conventional doping method by introducing impurities into the nanostructures suffers from the low efficiency, poor reliability, and damage to the host lattices. Alternatively, surface charge transfer doping (SCTD) is emerging as a simple yet efficient technique to achieve reliable doping in a nondestructive manner, which can modulate the carrier concentration by injecting or extracting the carrier charges between the surface dopant and semiconductor due to the work-function difference. SCTD is particularly useful for low-dimensional nanostructures that possess high surface area and single-crystalline structure. The high reproducibility, as well as the high spatial selectivity, makes SCTD a promising technique to construct high-performance nanodevices based on low-dimensional nanostructures. Here, recent advances of SCTD are summarized systematically and critically, focusing on its potential applications in one- and two-dimensional nanostructures. Mechanisms as well as characterization techniques for the surface charge transfer are analyzed. We also highlight the progress in the construction of novel nanoelectronic and nano-optoelectronic devices via SCTD. Finally, the challenges and future research opportunities of the SCTD method are prospected.

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Section: Sctd In 2d Nanostructuresmentioning

confidence: 99%

Surface Charge Transfer Doping of Low‐Dimensional Nanostructures toward High‐Performance Nanodevices

Zhang¹,

Shao²,

He³

et al. 2016

Advanced Materials

151

139

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show abstract

“…1. Because of both a variety of work functions available from organic semiconductors and a simple and non-damaging fabrication process involved in the present methodology28293031, tuning of carrier type on the 3D-TI surface by using an organic semiconductor molecule via interface contact with 3D-TIs is promising for making TPNJs to observe the intrinsically emerging electrical transport properties. Although the TPNJ is created on the top surface of BSTS thin films, the bottom surface with originally n-type is also modified by the influence of the substrate contact and its chemical potential is further changed under the deposition region of F4-TCNQ.…”

mentioning

confidence: 99%

In-plane topological p-n junction in the three-dimensional topological insulator Bi2−xSbxTe3−ySey

Tanabe

Satake

et al. 2016

Nat Commun

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A topological p-n junction (TPNJ) is an important concept to control spin and charge transport on a surface of three-dimensional topological insulators (3D-TIs). Here we report successful fabrication of such TPNJ on a surface of 3D-TI Bi2−xSbxTe3−ySey thin films and experimental observation of the electrical transport. By tuning the chemical potential of n-type topological Dirac surface of Bi2−xSbxTe3−ySey on its top half by using tetrafluoro-7,7,8,8-tetracyanoquinodimethane as an organic acceptor molecule, a half surface can be converted to p-type with leaving the other half side as the opposite n-type, and consequently TPNJ can be created. By sweeping the back-gate voltage in the field effect transistor structure, the TPNJ was controlled both on the bottom and the top surfaces. A dramatic change in electrical transport observed at the TPNJ on 3D-TI thin films promises novel spin and charge transport of 3D-TIs for future spintronics.

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“…In conventional semiconductors, surfaces are often passivated by adsorption of additional species or formation of interfaces 57 . In topological insulators, it has been suggested that surface states can also be controlled using adsorbates 58 and heterogeneous surface layers 59 . Understanding the surface states of BaSn 2 will therefore require special consideration of the impact of chemical environment.…”

Section: B Surfacementioning

confidence: 99%

BaSn2 : A wide-gap strong topological insulator

et al. 2017

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BaSn2 has been shown to form as layers of buckled stanene intercalated by barium ions 1 . However, despite an apparently straightforward synthesis and significant interest in stanene as a topological material, BaSn2 has been left largely unexplored, and has only recently been recognized as a potential topological insulator. Belonging to neither the lead nor bismuth chalcogenide families, it would represent a unique manifestation of the topological insulating phase. Here we present a detailed investigation of BaSn2, using both ab initio and experimental methods. First-principles calculations demonstrate that this overlooked material is a indeed strong topological insulator with a bulk band gap of 360meV, among the largest observed for topological insulators. We characterize the surface state dependence on termination chemistry, providing guidance for experimental efforts to measure and manipulate its topological properties. Additionally, through ab initio modeling and synthesis experiments we explore the stability and accessibility of this phase, revealing a complicated phase diagram that indicates a challenging path to obtaining single crystals.

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Molecular Doping Control at a Topological Insulator Surface: F₄-TCNQ on Bi₂Se₃

Cited by 11 publications

References 29 publications

Surface Charge Transfer Doping of Low‐Dimensional Nanostructures toward High‐Performance Nanodevices

Surface Charge Transfer Doping of Low‐Dimensional Nanostructures toward High‐Performance Nanodevices

In-plane topological p-n junction in the three-dimensional topological insulator Bi2−xSbxTe3−ySey

BaSn2 : A wide-gap strong topological insulator

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