Molecular beam epitaxy of three-dimensionally thick Dirac semimetal Cd3As2 films

Nakazawa, Yusuke; Uchida, Masaki; Nishihaya, Shinichi; Sato, Shin; Nakao, A.; Matsuno, Jobu; Kawasaki, Masashi

doi:10.1063/1.5098529

Cited by 29 publications

(17 citation statements)

References 50 publications

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“…[ 13 ] High‐quality thin films of Cd 3 As 2 have been grown by molecular beam epitaxy (MBE) and epitaxial integration of high‐mobility Cd 3 As 2 films with III–V semiconductors has been demonstrated. [ 14–16 ] Despite this progress, the potential of 3D topological semimetals for high‐speed electronics remains underexplored. [ 17,18 ]…”

Section: Figurementioning

confidence: 99%

“…[13] High-quality thin films of Cd 3 As 2 have been grown by molecular beam epitaxy (MBE) and epitaxial integration of high-mobility Cd 3 As 2 films with III-V semiconductors has been demonstrated. [14][15][16] Despite this progress, the potential of 3D topological semimetals for high-speed electronics remains underexplored. [17,18] In this Article, we model the frequency performance of transistors with Cd 3 As 2 channels, using our experimental measurements of contact resistances, carrier velocities and sheet carrier densities as input parameters.…”

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confidence: 99%

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Prospects of Terahertz Transistors with the Topological Semimetal Cadmium Arsenide

Shoron

Goyal

Guo

et al. 2020

Adv Elect Materials

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Electronic devices that operate at terahertz frequencies will require new materials that exhibit higher carrier velocities than traditional semiconductors. Calculations show that cadmium arsenide, a 3D topological (Dirac) semimetal, is an excellent candidate for field effect transistors that operate at frequencies above 1 THz. Moreover, such transistors have unique advantages that are enabled by the properties of Dirac electrons. These include predictions of an unprecedented linearity of the transconductance and cutoff frequencies over a large operating range and cutoff frequencies that remain above 1 THz at carrier densities as low as 1011 cm−2. The calculations are underpinned by measurements of devices with cadmium arsenide channels. Extremely low contact resistances (<2 × 10−9 Ω cm2), high electron velocities (>7 × 105 m s−1), and unprecedentedly large current densities (up to 10 A mm−1) are demonstrated. Current modulation (>50%) and transconductance already achieved in the early transistors show the potential for large (>10 ×) improvements by reducing interface trap densities. The results demonstrate the significant potential of topological semimetals for high‐speed transistors operating in the THz regime and open up new opportunities for next‐generation RF circuits.

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Section: Figurementioning

confidence: 99%

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confidence: 99%

Prospects of Terahertz Transistors with the Topological Semimetal Cadmium Arsenide

Shoron

Goyal

Guo

et al. 2020

Adv Elect Materials

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“…Materials grown by conventional epitaxy include Cd 3 As 2 , NbP, TaP, Na 3 Bi, Sr 3 PbO, LaAlGe, Co 3 Sn 2 S 2 , and TaIrTe 4 . [83][84][85][86][87][88][89][90][91] In most of these cases, the more volatile element (i.e., As, P, S, Te) is held in excess, while the less volatile element controls the growth rate. However, in the cases of materials like LaAlGe or Na 3 Bi, more careful flux matching is needed.…”

Section: Molecular Beam Epitaxy Growth Of Topologically Nontrivial Thin Filmsmentioning

confidence: 99%

Crystalline materials for quantum computing: Semiconductor heterostructures and topological insulators exemplars

et al. 2021

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High-purity crystalline solid-state materials play an essential role in various technologies for quantum information processing, from qubits based on spins to topological states. New and improved crystalline materials emerge each year and continue to drive new results in experimental quantum science. This article summarizes the opportunities for a selected class of crystalline materials for qubit technologies based on spins and topological states and the challenges associated with their fabrication. We start by describing semiconductor heterostructures for spin qubits in gate-defined quantum dots and benchmark GaAs, Si, and Ge, the three platforms that demonstrated two-qubit logic. We then examine novel topologically nontrivial materials and structures that might be incorporated into superconducting devices to create topological qubits. We review topological insulator thin films and move onto topological crystalline materials, such as PbSnTe, and its integration with Josephson junctions. We discuss advances in novel and specialized fabrication and characterization techniques to enable these. We conclude by identifying the most promising directions where advances in these material systems will enable progress in qubit technology.

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“…Weyl orbits [1,2] in topological semimetals are unique magnetic orbits that involve two Fermi arcs on opposite surfaces connected via the chiral Landau levels running through the bulk. Experiments studying the quantum oscillation and quantum Hall effect (QHE) related to such orbits have been carried out in recent years [3][4][5][6][7][8][9][10][11][12][13] and have sparked heated debates among research groups. For instance, as most of the experiments were conducted with the topological Dirac semimetal (DSM) candidate Cd 3 As 2 [14][15][16][17][18], some works attribute the QHE in those Cd 3 As 2 films to the surface Dirac cones instead of the Weyl orbits [11,19].…”

Section: Introductionmentioning

confidence: 99%

Quantum Hall effect induced by chiral Landau levels in topological semimetal films

Nguyen,

Kobayashi,

Wichmann

et al. 2021

Preprint

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Motivated by recent transport experiments, we theoretically study the quantum Hall effect in topological semimetal films. Owing to the confinement effect, the bulk subbands originating from the chiral Landau levels establish energy gaps that have quantized Hall conductance and can be observed in relatively thick films. We find that the quantum Hall state is strongly anisotropic for different confinement directions not only due to the presence of the surface states but also because of the bulk chiral Landau levels. As a result, we re-examine the quantum Hall effect from the surface Fermi arcs and chiral modes in Weyl semimetals and give a more general view into this problem. Besides, we also find that when a topological Dirac semimetal is confined in its rotational symmetry axis, it hosts both quantum Hall and quantum spin Hall states, in which the helical edge states are protected by the conservation of the spin-z component.

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Molecular beam epitaxy of three-dimensionally thick Dirac semimetal Cd3As2 films

Cited by 29 publications

References 50 publications

Prospects of Terahertz Transistors with the Topological Semimetal Cadmium Arsenide

Prospects of Terahertz Transistors with the Topological Semimetal Cadmium Arsenide

Crystalline materials for quantum computing: Semiconductor heterostructures and topological insulators exemplars

Quantum Hall effect induced by chiral Landau levels in topological semimetal films

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