Molecular beam epitaxy of single-crystalline bixbyite 
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Papadogianni, Alexandra; Wouters, Charlotte; Schewski, Robert; Feldl, Johannes; Lähnemann, Jonas; Nagata, Takahiro; Kluth, Elias; Feneberg, Martin; Goldhahn, R.; Ramsteiner, M.; Albrecht, M.; Bierwagen, Oliver

doi:10.1103/physrevmaterials.6.033604

Cited by 5 publications

(13 citation statements)

References 44 publications

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“…The material is generally known as a substrate for In 2 O 3 -based bixbyite compounds. [13] A closely packed YSZ (111) cubic substrate (a = 5.147 Å, Crystec GmbH) with a nominal Y doping level of 9 mol%) exhibits an in-plane lattice spacing along the [110] direction of a YSZ 110 = 3.639 Å. This coincides with the in-plane lattice parameter a MoS2 of 2H-MoS 2 with a lattice mismatch of about -13.1%.…”

Section: Resultsmentioning

confidence: 90%

Y‐Stabilized ZrO₂ as a Promising Wafer Material for the Epitaxial Growth of Transition Metal Dichalcogenides

Wang

Schmidbauer

Koch

et al. 2023

Physica Rapid Research Ltrs

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Y‐stabilized ZrO2 (YSZ) as a promising single‐crystal wafer material for the epitaxial growth of transition metal dichalcogenides applicable for both physical (PVD) and chemical vapor deposition (CVD) processes is used. MoS2 layers grown on YSZ (111) exhibit sixfold symmetry and in‐plane epitaxial relationship with the wafer of () MoS2 || () YSZ. The PVD‐grown submonolayer thin films show nucleation of MoS2 islands with a lateral size of up to 100 nm and a preferential alignment along the substrate step edges. The layers exhibit a strong photoluminescence yield as expected for the 2H‐phase of MoS2 in a single monolayer limit. The CVD‐grown samples are composed of triangular islands of several micrometers in size in the presence of antiparallel domains. The results represent a promising route toward fabrication of wafer‐scale single‐crystalline transition metal dichalcogenide layers with a tunable layer thickness on commercially available wafers.

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Section: Resultsmentioning

confidence: 90%

Y‐Stabilized ZrO₂ as a Promising Wafer Material for the Epitaxial Growth of Transition Metal Dichalcogenides

Wang

Schmidbauer

Koch

et al. 2023

Physica Rapid Research Ltrs

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“…6 Papadogianni et al reported that the lattice constant of δ-Ga 2 O 3 was 9.365 Å, as determined by Vegard's law from the lattice constant of bcc-(In 1−x Ga x ) 2 O 3 thin film prepared by PA-MBE. 25 Yoshioka et al reported that the lattice constant calculated by DFT was 9.401 Å. However, they suggested that the expected lattice constant may be smaller than 9.3 Å because their calculation results included an overestimation of several percent.…”

Section: Resultsmentioning

confidence: 99%

“…Roy et al reported lattice parameter a = 10.00 Å; however, they mentioned that strain and water molecules may have affected this . Papadogianni et al reported that the lattice constant of δ-Ga 2 O 3 was 9.365 Å, as determined by Vegard’s law from the lattice constant of bcc-(In 1– x Ga x ) 2 O 3 thin film prepared by PA-MBE . Yoshioka et al reported that the lattice constant calculated by DFT was 9.401 Å.…”

Section: Resultsmentioning

confidence: 99%

“…The hypothetical lattice constant of δ-Ga 2 O 3 was estimated to be 9.365 ± 0.018 Å according to Vegard's law. 25 However, its physical properties, such as band gap, have not been determined experimentally.…”

Section: Introductionmentioning

confidence: 99%

“…According to Papadogianni et al, the heteroepitaxial growth of bcc-(In 1– x Ga x ) 2 O 3 thin films was achieved up to x = 0.18 by plasma-assisted molecular beam epitaxy under various growth conditions. The hypothetical lattice constant of δ-Ga 2 O 3 was estimated to be 9.365 ± 0.018 Å according to Vegard’s law . However, its physical properties, such as band gap, have not been determined experimentally.…”

Section: Introductionmentioning

confidence: 99%

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Demonstration of Bixbyite-Structured δ-Ga₂O₃ Thin Films Using β-Fe₂O₃ Buffer Layers by Mist Chemical Vapor Deposition

Kato

Nishinaka

Shimazoe

et al. 2023

ACS Appl. Electron. Mater.

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Gallium oxide (Ga 2 O 3 ) possesses five polymorphs: α, β, γ, κ (ε), and δ. Although the first four polymorphs have been well-studied, there are few reports on δ-Ga 2 O 3 . Here, we demonstrate the epitaxial growth of metastable δ-Ga 2 O 3 thin films by mist chemical vapor deposition using β-Fe 2 O 3 buffer layers. X-ray diffraction (XRD) 2θ−ω scan pattern revealed that (004) κ-Ga 2 O 3 grew on (111) yttria-stabilized zirconia (YSZ) without a buffer layer or with a bcc-In 2 O 3 buffer layer, whereas (222) δ-Ga 2 O 3 grew on (222) β-Fe 2 O 3 . The β-Fe 2 O 3 buffer layer led to the epitaxial growth of the δ-Ga 2 O 3 thin film. The lattice mismatch between the equivalent crystal structures of β-Fe 2 O 3 and δ-Ga 2 O 3 triggered this growth. XRD analysis shows that δ-Ga 2 O 3 grew epitaxially on the β-Fe 2 O 3 buffer layer/YSZ substrate in both the out-of-plane and in-plane orientations, and the lattice constant inferred from the diffraction peaks was estimated to be 9.255 Å. Reciprocal space mapping results indicated that the δ-Ga 2 O 3 grown on β-Fe 2 O 3 was fully relaxed. Selected area electron diffraction images confirmed that the δ-Ga 2 O 3 exhibited a cubic bixbyite structure. The optical band gap of δ-Ga 2 O 3 was 4.3 or 4.9 eV, as calculated from reflection electron energy loss spectroscopy. We successfully grew a δ-Ga 2 O 3 epitaxial thin film for the first time. KEYWORDS: δ-Ga 2 O 3 , β-Fe 2 O 3 , bixbyite structure, epitaxial growth, mist CVD

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Epitaxial Growth of δ‐Ga₂O₃ Thin Films Grown on YSZ and Sapphire Substrates Using β‐Fe₂O₃ Buffer Layers via Mist Chemical Vapor Deposition

Kato,

Nishinaka,

Shimazoe

et al. 2023

Physica Status Solidi (a)

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In this study, epitaxial δ‐Ga2O3 thin films were successfully grown on various planes of yttria‐stabilized zirconia (YSZ) and c‐plane sapphire substrates by inserting same crystal‐structured β‐Fe2O3 and bcc‐In2O3 buffer layers via mist chemical vapor deposition. X‐ray diffraction (XRD) measurements revealed that various planes of δ‐Ga2O3 thin films were grown in both the out‐of‐plane and in‐plane orientations using the same crystal‐structured buffer layers to reduce the lattice mismatch. δ‐Ga2O3 (111) was demonstrated to grow on the YSZ (111) in the narrow growth temperature range of 575 to 675 °C due to thermal instability of β‐Fe2O3 buffer layers. Next, we investigated a c‐plane sapphire wafer as a substrate using two buffer layers for the growth of δ‐Ga2O3. XRD 2θ‐ω scan revealed that the mixture of α‐ and δ‐ Ga2O3 thin films were grown on Fe2O3/In2O3/c‐plane sapphire. This is because the Fe2O3 buffer layers were phase separated into α and β phases due to the large grain size of the In2O3 buffer layer. XRD φ‐scan profiles indicated that the δ‐Ga2O3 thin film grown on sapphire was composed of a twin domain. This study contributes to our understanding of the growth mechanism of δ‐Ga2O3 and its future applications in devices.This article is protected by copyright. All rights reserved.

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Molecular beam epitaxy of single-crystalline bixbyite (In1−xGax)2O3

Cited by 5 publications

References 44 publications

Y‐Stabilized ZrO₂ as a Promising Wafer Material for the Epitaxial Growth of Transition Metal Dichalcogenides

Y‐Stabilized ZrO₂ as a Promising Wafer Material for the Epitaxial Growth of Transition Metal Dichalcogenides

Demonstration of Bixbyite-Structured δ-Ga₂O₃ Thin Films Using β-Fe₂O₃ Buffer Layers by Mist Chemical Vapor Deposition

Epitaxial Growth of δ‐Ga₂O₃ Thin Films Grown on YSZ and Sapphire Substrates Using β‐Fe₂O₃ Buffer Layers via Mist Chemical Vapor Deposition

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Molecular beam epitaxy of single-crystalline bixbyite (In1−xGax)2O3

Cited by 5 publications

References 44 publications

Y‐Stabilized ZrO2 as a Promising Wafer Material for the Epitaxial Growth of Transition Metal Dichalcogenides

Y‐Stabilized ZrO2 as a Promising Wafer Material for the Epitaxial Growth of Transition Metal Dichalcogenides

Demonstration of Bixbyite-Structured δ-Ga2O3 Thin Films Using β-Fe2O3 Buffer Layers by Mist Chemical Vapor Deposition

Epitaxial Growth of δ‐Ga2O3 Thin Films Grown on YSZ and Sapphire Substrates Using β‐Fe2O3 Buffer Layers via Mist Chemical Vapor Deposition

Contact Info

Product

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Y‐Stabilized ZrO₂ as a Promising Wafer Material for the Epitaxial Growth of Transition Metal Dichalcogenides

Y‐Stabilized ZrO₂ as a Promising Wafer Material for the Epitaxial Growth of Transition Metal Dichalcogenides

Demonstration of Bixbyite-Structured δ-Ga₂O₃ Thin Films Using β-Fe₂O₃ Buffer Layers by Mist Chemical Vapor Deposition

Epitaxial Growth of δ‐Ga₂O₃ Thin Films Grown on YSZ and Sapphire Substrates Using β‐Fe₂O₃ Buffer Layers via Mist Chemical Vapor Deposition