Molecular beam epitaxy of PbSrSe and PbSe/PbSrSe multiple quantum well structures for use in midinfrared light emitting devices

Fang, X. M.; Namjou, Khosrow; Chao, I-Na; McCann, Patrick J.; Dai, Ning; Tor, G.

doi:10.1116/1.591460

Cited by 28 publications

(28 citation statements)

References 14 publications

(10 reference statements)

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“…Such designs are now an integral part of mid-IR and THz QCL fabrication where a three-level energy structure is created with the bottom two energies spaced by 36 meV, the LO phonon energy of the GaAs QW material [1,29]. The total band gap difference for this QW is 177 meV, which is close to the room temperature band gap difference of 173 meV between the PbSe (E g =278 meV) well and Pb 0.93 Sr 0.07 Se (E g =451 meV) barrier materials used in prior experimental studies [21][22][23][24][25][26][27]. This allows rapid filling of the upper laser transition state along with rapid emptying of the bottom laser transition state thus helping to reduce further the threshold for population inversion.…”

Section: Iv-vi Quantum Well Materialsmentioning

confidence: 86%

“…Depending on alloy composition and temperature, their bandgaps range from 0 to over 500 meV. Detailed procedures for growth and characterization of PbSrSe/PbSe MQWs on (111)-oriented BaF 2 and silicon have been described elsewhere [21][22][23][24][25][26]. The bands are almost mirror images of each other, see Table II, so similar quantum effects are expected in both the conduction and valence bands.…”

Section: Iv-vi Quantum Well Materialsmentioning

confidence: 99%

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IV-VI Semiconductor Mid-IR Lasers

McCann

Selivanov

2005

MRS Proc.

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Mid-IR lasers fabricated from narrow bandgap IV-VI semiconductors are proven devices for molecular spectroscopy applications. Wide single-mode tunability, low waste heat generation, and large spectral coverage from about 1000 cm -1 (10 µm) to about 2500 cm -1 (4 µm) have allowed development of laser absorption spectroscopy instrumentation for fast and sensitive measurement of specific gas phase molecules. For example, IV-VI mid-IR lasers with emission in the 5.2 µm spectral range have recently enabled the development of breath analysis instruments for real-time measurement of exhaled nitric oxide (eNO). Laser tunability with current ramping is sufficient for simultaneous measurement of exhaled carbon dioxide (eCO 2 ), a capability that allows highly accurate determination of eNO concentrations in the low ppb range, a sensitivity required for assessing airway inflammation in patients with asthma. After discussing emerging medical diagnostic applications this paper reviews recent progress in the development of liquid-nitrogen-free cryogenic cooling systems for IV-VI mid-IR lasers. A description of continuing research on the development of improved IV-VI lasers, where the primary objective is to fabricate devices with continuous wave (cw) operation at room temperature is then presented. Theoretical and experimental analysis of (111)-oriented multiple quantum well (MQW) IV-VI materials show that it should be possible to reduce lasing thresholds significantly. In addition, results from transferring IV-VI materials from low thermal conductivity growth substrates to higher thermal conductivity copper show that new laser packaging methods can significantly improve active region heat dissipation. Together, these new materials and device packaging methods promise to enable the fabrication of IV-VI mid-IR lasers with cw operation at room temperature.

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Section: Iv-vi Quantum Well Materialsmentioning

confidence: 86%

Section: Iv-vi Quantum Well Materialsmentioning

confidence: 99%

IV-VI Semiconductor Mid-IR Lasers

McCann

Selivanov

2005

MRS Proc.

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“…They are strained by 0.16% due to the slightly different lattice constants of PbSe and Pb 0.93 Sr 0.07 Se (Ref. 16).…”

Section: Layer Setupmentioning

confidence: 99%

PbSe quantum well mid-infrared vertical external cavity surface emitting laser on Si-substrates

Fill¹,

Khiar²,

Rahim³

et al. 2011

Journal of Applied Physics

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Mid-infrared vertical external cavity surface emitting lasers based on PbSe/PbSrSe multi-quantum-well structures on Si-substrates are realized. A modular design allows growing the active region and the bottom Bragg mirror on two different Si-substrates, thus facilitating comparison between different structures. Lasing is observed from 3.3 to 5.1 μm wavelength and up to 52 °C heat sink temperature with 1.55 μm optical pumping. Simulations show that threshold powers are limited by Shockley-Read recombination with lifetimes as short as 0.1 ns. At higher temperatures, an additional threshold power increase occurs probably due to limited carrier diffusion length and carrier leakage, caused by an unfavorable band alignment.

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“…IV–VI QWs have been successfully fabricated with growth directions along 〈111〉, 〈100〉, and 〈110〉 11, 14, 15. For QWs grown along [111] direction, the four‐valley degenerate at four L points splits into one longitudinal and three oblique branches.…”

Section: Physical Model and Mathematical Formulationmentioning

confidence: 99%

Theoretical analysis of optical gain in PbSe/Pb_1–xSr_xSe quantum well lasers

Sun

Zhang

et al. 2009

Physica Status Solidi (a)

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In this article, theoretical calculation of optical gain has been performed for IV–VI lead salt PbSe/Pb1–xSrxSe quantum well lasers emitting at about 4–6 µm by using an analytic gain expression. The reduced density of states and interband transition matrix elements used in the calculation were derived in the framework of the k·p model. Peak optical gain as a function of carrier concentration and radiative current density was calculated. The material parameters and laser structures that affect device performance were analyzed in details.

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Molecular beam epitaxy of PbSrSe and PbSe/PbSrSe multiple quantum well structures for use in midinfrared light emitting devices

Cited by 28 publications

References 14 publications

IV-VI Semiconductor Mid-IR Lasers

IV-VI Semiconductor Mid-IR Lasers

PbSe quantum well mid-infrared vertical external cavity surface emitting laser on Si-substrates

Theoretical analysis of optical gain in PbSe/Pb_1–xSr_xSe quantum well lasers

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Molecular beam epitaxy of PbSrSe and PbSe/PbSrSe multiple quantum well structures for use in midinfrared light emitting devices

Cited by 28 publications

References 14 publications

IV-VI Semiconductor Mid-IR Lasers

IV-VI Semiconductor Mid-IR Lasers

PbSe quantum well mid-infrared vertical external cavity surface emitting laser on Si-substrates

Theoretical analysis of optical gain in PbSe/Pb1–xSrxSe quantum well lasers

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Product

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Theoretical analysis of optical gain in PbSe/Pb_1–xSr_xSe quantum well lasers