Molecular Beam Epitaxy of Nitrides for Advanced Electronic Materials

Koblmüller, Gregor; Lang, Jordan R.; Young, Erin C.; Speck, James S.

doi:10.1016/b978-0-444-63304-0.00017-2

Cited by 2 publications

(1 citation statement)

References 207 publications

(322 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Both the 11 20 ð Þ, a-, and 1 100 ð Þ, m-, surface The growth along the [0001] polar direction was preferred and better controlled for long time, but recently different approaches have been proposed to accomplish growth along different crystallographic directions and polarity by hydride vapor phase epitaxy, 27 metalorganic chemical vapor deposition, 28 or molecular beam epitaxy. 29 The GaN surfaces with different crystallographic orientations and polarities have different chemical stabilities due to their different bond arrangements, which requires different material processing. 30 In addition, it was also found that the different surface energies allow for different growth rates and impurity incorporation efficiencies.…”

Section: B Dependence On Gan Surface Polarity and Qualitymentioning

confidence: 99%

A review of in situ surface functionalization of gallium nitride via beaker wet chemistry

et al. 2015

View full text Add to dashboard Cite

This review focuses on in situ functionalization of gallium nitride (GaN) with different adsorbates in the presence of an etchant. The low-temperature aqueous nature of this process provides a safe, environmentally friendly technique for tailoring the semiconductor's properties for various applications. Surface binding to GaN relies on a native oxide layer or direct attachment to the metal center present on the etched surface. The specifics of the binding mechanism are based on the functional groups present on the adsorbate. The effects of the GaN surface polarity and quality on the modification approach are analyzed. The review summarizes the alteration of GaN properties after the in situ treatment. Quantitative data until now have shown changes in morphological, surface chemical, optical, electronic, and aqueous stability properties. The review concludes with a short outlook on future studies associated with this surface modification approach.

show abstract

Section: B Dependence On Gan Surface Polarity and Qualitymentioning

confidence: 99%