Molecular beam epitaxy of N-polar InGaN

Abstract

Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition

Comparison of the Luminous Efficiencies of Ga- and N-PolarInxGa1−xN/InFernández-Garrido1, Lähnemann2, Hauswald3 et al. 2016Phys. Rev. Applied171140View full textAdd to dashboardCite

“…Samples A and B were prepared at TopGaN. They were grown in a V90 VG Semicon MBE system equipped with a UNI-Bulb Veeco radio-frequency N 2 plasma source for active N, and solid-source effusion cells 4,6,7 More details about the growth conditions and properties of these samples can be found elsewhere. 4 Two additional series of samples (C-F and G-J) were grown at PDI in a custom-designed CRE-ATEC PA-MBE system equipped with a UNI-Bulb Veeco radio-frequency plasma source for the generation of active N, and solid-source effusion cells for Ga and In.…”

“…This latter result reflects again the enhanced In incorporation efficiency along the [0001] direction as reported previously by several groups. 4,6,7 2. Low-temperature photoluminescence with resonant excitation Figure 5 presents the low-temperature (10 K) µ-PL spectra excited at 413 nm (473 nm for samples E and F) of the Ga-(a) and N-polar (b) In x Ga 1−x N/In y Ga 1−y N QWs.…”

“…The first of these advantages is an enhanced In-incorporation efficiency. 5,6 This phenomenon is the result of the higher thermal stability of N-polar InN and paves the way for the use of signif- icantly higher substrate temperatures 7 that may help to improve the crystal quality as well as to minimize the incorporation of impurities. The second advantage is related to the expected improvement in device performance caused by the reversed direction of the polarization fields in the quantum wells (QWs) that constitute the active region of LEDs.…”

N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

“…The growth of group-III nitrides on an N-polar plane has attracted much attention because they enable the growth of high-quality InGaN with high In composition owing to their thermal stability, which is higher than those grown on a Ga-polar plane. [1][2][3] In addition, in N-polar InGaN/GaN heterostructures, the spontaneous and piezoelectric polarization directions were reversed from those in Ga-polar structures, which could be advantageous for operating green or longer-wavelength InGaN light-emitting devices and solar cells. 4,5 However, metalorganic chemical vapor deposition (MOCVD) growth of N-polar GaN on sapphire typically leads to the formation of a rough surface morphology with hexagonal pyramidal structures and lower crystalline quality than Ga-polar GaN.…”

Demonstration of forward inter-band tunneling in GaN by polarization engineering

“…The N-polar orientation of GaN was used in this work to achieve high composition InGaN for efficient inter-band tunneling. N-polar InGaN was grown using the conditions and growth model developed earlier 14,15 . InGaN was grown at a substrate temperature of 550 0 C followed by 70nm of p GaN (N A ~ 5 X 10 19 cm -3 ).…”