Molecular-beam epitaxy of monolayer MoSe<sub>2</sub>: growth characteristics and domain boundary formation

Lin, Jiao; Liu, Hong Jun; Chen, Jinglei; Yi, Ya Sha; Chen, W.G.; Cai, Yuan; Wang, Jiannong; Dai, Xianqi; Wang, Ning; Ho, Wing Kin; Xie, Mingyu

doi:10.1088/1367-2630/17/5/053023

Cited by 89 publications

(84 citation statements)

References 30 publications

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“…Experimental results of epitaxially grown TMDs on these inert, hexagonal substrates show that TMD layers grow unstrained, with intrinsic lattice constants, and are free of misfit dislocations. 97,103,105 Van der Waals epitaxy enables the growth of vertical heterostructures with materials chosen for their electronic properties instead of crystal lattice structure. Additionally, the defect density (e.g.…”

Section: Substrate Impact On 2d Materialsmentioning

confidence: 99%

A roadmap for electronic grade 2D materials

et al. 2019

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Since their modern debut in 2004, 2-dimensional (2D) materials continue to exhibit scientific and industrial promise, providing a broad materials platform for scientific investigation, and development of nano-and atomic-scale devices. A significant focus of the last decade's research in this field has been 2D semiconductors, whose electronic properties can be tuned through manipulation of dimensionality, substrate engineering, strain, and doping. 1-8 2D semiconductors such as molybdenum disulfide (MoS2) and tungsten diselenide (WSe2) have dominated recent interest for potential integration in electronic technologies, due to their intrinsic and tunable properties, atomic-scale thicknesses, and relative ease of stacking to create new and custom structures. However, to go "beyond the bench", advances in large-scale, 2D layer synthesis and engineering must lead to "exfoliation-quality" 2D layers at the wafer scale. This roadmap aims to address this grand challenge by identifying key technology drivers where 2D layers can have an impact, and to discuss synthesis and layer engineering for the realization of electronic-grade, 2D materials. We focus on three fundamental areas of research that must be heavily pursued in both experiment and computation to achieve high-quality materials for electronic and optoelectronic applications. The document is organized as follows:

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Section: Substrate Impact On 2d Materialsmentioning

confidence: 99%

A roadmap for electronic grade 2D materials

et al. 2019

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“…Note that the AFM is performed after the sample is brought up to 20 °C in vacuum over 24 h. During this “warm‐up” annealing, reflection high‐energy electron diffraction (RHEED) measurements transition from a cloudy pattern (observed after growth at −70°C) to the streaky pattern (Figure d, observed after warm‐up), indicating that the Te nanostructures transform from an amorphous to a crystalline phase. The streaky RHEED pattern remains the same upon in‐plane sample rotation, indicating that the grains are randomly oriented in‐plane, similar to other vdW materials growth on HOPG . For the 20 °C growth, individual grains are formed on the surface and the grains are no longer fractal, but rather exhibit a compact and elongated morphology.…”

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confidence: 99%

High‐Mobility Helical Tellurium Field‐Effect Transistors Enabled by Transfer‐Free, Low‐Temperature Direct Growth

et al. 2018

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The transfer-free direct growth of high-performance materials and devices can enable transformative new technologies. Here, room-temperature field-effect hole mobilities as high as 707 cm V s are reported, achieved using transfer-free, low-temperature (≤120 °C) direct growth of helical tellurium (Te) nanostructure devices on SiO /Si. The Te nanostructures exhibit significantly higher device performance than other low-temperature grown semiconductors, and it is demonstrated that through careful control of the growth process, high-performance Te can be grown on other technologically relevant substrates including flexible plastics like polyethylene terephthalate and graphene in addition to amorphous oxides like SiO /Si and HfO . The morphology of the Te films can be tailored by the growth temperature, and different carrier scattering mechanisms are identified for films with different morphologies. The transfer-free direct growth of high-mobility Te devices can enable major technological breakthroughs, as the low-temperature growth and fabrication is compatible with the severe thermal budget constraints of emerging applications. For example, vertical integration of novel devices atop a silicon complementary metal oxide semiconductor platform (thermal budget <450 °C) has been theoretically shown to provide a 10× systems level performance improvement, while flexible and wearable electronics (thermal budget <200 °C) can revolutionize defense and medical applications.

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“…Similar morphologies of MBE-grown MoSe2 on highly oriented pyrolytic graphite, graphene and SiC(0001) were also observed by STM by other groups. 18,21,27,29,30 Since the intensities recorded in HAADF-STEM images are related to Rutherford scattering which increases with the atomic number (Z), 31,32 different intensities in the image can be attributed to different layer thickness. Figure 2b shows the intensity histogram with dashed lines that correspond to intensities in ML and BL regions.…”

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confidence: 99%

Highly Oriented Atomically Thin Ambipolar MoSe₂ Grown by Molecular Beam Epitaxy

Chen

Ovchinnikov

Lazar³

et al. 2017

ACS Nano

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Transition metal dichalcogenides (TMDCs), together with other two-dimensional (2D) materials, have attracted great interest due to the unique optical and electrical properties of atomically thin layers. In order to fulfill their potential, developing large-area growth and understanding the properties of TMDCs have become crucial. Here, we have used molecular beam epitaxy (MBE) to grow atomically thin MoSe2 on GaAs(111)B. No intermediate compounds were detected at the interface of as-grown films. Careful optimization of the growth temperature can result in the growth of highly aligned films with only two possible crystalline orientations due to broken inversion symmetry. As-grown films can be transferred onto insulating substrates, allowing their optical and electrical properties to be probed. By using polymer electrolyte gating, we have achieved ambipolar transport in MBE-grown MoSe2. The temperature-dependent transport characteristics can be explained by the 2D variable-range hopping (2D-VRH) model, indicating that the transport is strongly limited by the disorder in the film.

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Molecular-beam epitaxy of monolayer MoSe₂: growth characteristics and domain boundary formation

Cited by 89 publications

References 30 publications

A roadmap for electronic grade 2D materials

A roadmap for electronic grade 2D materials

High‐Mobility Helical Tellurium Field‐Effect Transistors Enabled by Transfer‐Free, Low‐Temperature Direct Growth

Highly Oriented Atomically Thin Ambipolar MoSe₂ Grown by Molecular Beam Epitaxy

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Molecular-beam epitaxy of monolayer MoSe2: growth characteristics and domain boundary formation

Cited by 89 publications

References 30 publications

A roadmap for electronic grade 2D materials

A roadmap for electronic grade 2D materials

High‐Mobility Helical Tellurium Field‐Effect Transistors Enabled by Transfer‐Free, Low‐Temperature Direct Growth

Highly Oriented Atomically Thin Ambipolar MoSe2 Grown by Molecular Beam Epitaxy

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Molecular-beam epitaxy of monolayer MoSe₂: growth characteristics and domain boundary formation

Highly Oriented Atomically Thin Ambipolar MoSe₂ Grown by Molecular Beam Epitaxy