Molecular Beam Epitaxy of GaSb and GaSbxAs1-x

Yano, Mitsuaki; Suzuki, Yukio; Ishii, Tetsuo; Matsushima, Yuichi; Kimata, Morihiko

doi:10.1143/jjap.17.2091

Cited by 58 publications

(12 citation statements)

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“…The PL properties can be very different when using a specific growth method or specific growth conditions. For samples grown using MBE technology, better crystallinity is obtained when using a growth temperature range of 500-550 • C and an Sb 4 :Ga flux ratio of more than 1.5 [34]. In another study, buffer layers were used to reduce the defect concentrations [35].…”

Section: Gasb Emission Propertiesmentioning

confidence: 99%

“…In another study, buffer layers were used to reduce the defect concentrations [35]. Clearly, high-quality MBE-grown GaSb, which demonstrates higher carrier mobility, can be obtained by the optimization of the growth conditions [33][34][35][36]. More importantly, PL measurements can serve to determine the transitions that occur in good quality GaSb materials [33].…”

Section: Gasb Emission Propertiesmentioning

confidence: 99%

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Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

et al. 2017

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Groups III-V semiconductors have received a great deal of attention because of their potential advantages for use in optoelectronic and electronic applications. Gallium antimonide (GaSb) and GaSb-related semiconductors, which exhibit high carrier mobility and a narrow band gap (0.725 eV at 300 K), have been recognized as suitable candidates for high-performance optoelectronics in the mid-infrared range. However, the performances of the resulting devices are strongly dependent on the structural and emission properties of the materials. Enhancement of the crystal quality, adjustment of the alloy components, and improvement of the emission properties have therefore become the focus of research efforts toward GaSb semiconductors. Molecular beam epitaxy (MBE) is suitable for the large-scale production of GaSb, especially for high crystal quality and beneficial optical properties. We review the recent progress in the epitaxy of GaSb materials, including films and nanostructures composed of GaSb-related alloys and compounds. The emission properties of these materials and their relationships to the alloy components and material structures are also discussed. Specific examples are included to provide insight on the common general physical and optical properties and parameters involved in the synergistic epitaxy processes. In addition, the further directions for the epitaxy of GaSb materials are forecasted.

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Section: Gasb Emission Propertiesmentioning

confidence: 99%

Section: Gasb Emission Propertiesmentioning

confidence: 99%

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

et al. 2017

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“…Optical absorption measurements were undertaken on GaAs x Sb 1Àx by several authors [136][137][138]. The measured data were used to determine E 0 [136] and its temperature dependence [137,138].…”

Section: (C) Gaassbmentioning

confidence: 99%

Optical Properties

2009

Properties of Semiconductor Alloys

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The complex dielectric function «ðEÞ ¼ « 1 ðEÞ þ i« 2 ðEÞ ð 10:1Þcan be used to describe the optical properties of the medium at all photon energiesThe complex refractive index n Ã (E) can also be given bywhere n(E) is the ordinary (real) refractive index and k(E) is the extinction coefficient. From Equation (10.2), we obtain Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors Sadao Adachi

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“…Platinum Antimonide (PtSb 2 / finds applications in device miniaturization, colloidal nanoparticle synthesis, sensors and detector materials, and thermo-photovoltaic devices [140][141][142]. The band gap energy of GaSb makes it suitable for low power operation [152][153][154][155][156][157]. 1.2.8.…”

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confidence: 99%

“…They are also used in ultrasonic amplification [149]. The band gap energy of GaSb makes it suitable for low power operation [152][153][154][155][156][157]. In Sect.…”

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Thermoelectric Power in Quantum Dots Under Large Magnetic Field

Ghatak

Bhattacharya

2010

Thermoelectric Power in Nanostructured Materials

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Ah attempt is rnade to study the thermoelectric power of the electrons and holes in quantum dora of Te under large rrmgaetic field in accordance with various band models. Ir la found that the thermopower for both types of carriers decreases with increasing carrier conceaatration in art oscillatory manner. Ir also increases with increasing film thickness and the numerir values of the thermopower for holes in quantum dots of Te are greater than that of the $ame for the electrorm.

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Molecular Beam Epitaxy of GaSb and GaSb_xAs_1-x

Cited by 58 publications

References 0 publications

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

Brief Review of Epitaxy and Emission Properties of GaSb and Related Semiconductors

Optical Properties

Thermoelectric Power in Quantum Dots Under Large Magnetic Field

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