Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers

Hao, Ruiting; Deng, Shukang; Shen, Lanxian; Yang, Peizhi; Tu, Jielei; Liao, Hua; Xu, Yingqiang; Niu, Zhichuan

doi:10.1016/j.tsf.2010.08.001

Cited by 14 publications

(13 citation statements)

References 23 publications

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“…Hao et al have shown TEM evidence of metamorphic AlSb islands on GaAs in agreement with our observation of a RHEED pattern typical of island growth mode. 11 RHEED measurements indicate a change to a lattice parameter close to that of bulk AlSb within the first ML of AlSb deposition. Such rapid change is due to the grazing incidence of the electron beam, thus the measured lattice parameter is representative of the tips of the AlSb islands which are not laterally constrained until after island coalescence.…”

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confidence: 85%

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Relaxation dynamics and residual strain in metamorphic AlSb on GaAs

Ripalda

Sanchez

Taboada

et al. 2012

Applied Physics Letters

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We have observed the evolution of the accumulated stress during heteroepitaxial growth of highly lattice mismatched AlSb on GaAs by measuring the deformation of the substrate as a function of time. High resolution transmission electron microscopy images show almost all of the plastic relaxation is accommodated by an array of 90° misfit dislocations at the interface. The in-plane lattice parameter of the resulting metamorphic AlSb is slightly smaller (0.3%) than the bulk value and perfectly matches the lattice parameter of bulk GaSb. It is, therefore, possible to grow nearly stress-free GaSb on GaAs using a metamorphic AlSb buffer layer.

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confidence: 85%

“…These can be a significant obstacle for device performance, but it has been shown that planar defects in metamorphic AlSb on GaAs can be suppressed with AlSb/GaSb super lattices. 11 High resolution TEM (HRTEM) micrographs taken in a [110] projection also show a high density of interfacial misfit (IMF) dislocations (Fig. 3).…”

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confidence: 99%

Relaxation dynamics and residual strain in metamorphic AlSb on GaAs

Ripalda

Sanchez

Taboada

et al. 2012

Applied Physics Letters

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“…For the undoped GaSb sample, these peaks are found at: P1 (0.959 eV), P2 (1.142 eV), P3 (1.319 eV) and P4 (1.485 eV), respectively. This PL peak energy range was reported only in GaSb-based nanostructures grown on GaAs substrate, such as quantum rings and quantum dots [16,17], and it is higher than the PL energy in most of the GaSb epilayers grown on GaAs reported previously (0.71-0.83 eV), [8,9,[18][19][20][21][22][23][24] regardless of the growth techniques and doping condition. We notice that the thickness of GaSb layers investigated in those reports range from 1 -20 µm, which is significantly larger than that of the samples studied in the current work, i.e.…”

Section: Resultsmentioning

confidence: 54%

“…In order to overcome the material problems associated with the large lattice mismatch, insertion of various buffer layers have been utilized, such as the AlSb/GaSb superlattices [8,9] and AlGaAsSb metamorphic layers [10]. These methods have been demonstrated to reduce the density of dislocations and improve the quality of the GaSb/GaAs heterostructure.…”

Section: Introductionmentioning

confidence: 99%

Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate

Chen

Shao

et al. 2018

Infrared Physics & Technology

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In this work, the effects of p-type beryllium (Be) doping on the optical properties of GaSb epilayers grown on GaAs substrate by Molecular Beam Epitaxy (MBE) have been studied. Temperature-and excitation power-dependent photoluminescence (PL) measurements were performed on both nominally undoped and intentionally Be-doped GaSb layers. Clear PL emissions are observable even at the temperature of 270 K from both layers, indicating the high material quality. In the Be-doped GaSb layer, the transition energies of main PL features exhibit red-shift up to ~7 meV, and the peak widths characterized by Full-Widthat-Half-Maximum (FWHM) also decrease. In addition, analysis on the PL integrated intensity in the Be-doped sample reveals a gain of emission signal, as well as a larger carrier thermal activation energy. These distinctive PL behaviors identified in the Be-doped GaSb layer suggest that the residual compressive strain is effectively relaxed in the epilayer, due possibly to the reduction of dislocation density in the GaSb layer with the intentional incorporation of Be dopants. Our results confirm the role of Be as a promising dopant in the improvement of crystalline quality in GaSb, which is a crucial factor for growth and fabrication of high quality strain-free GaSb-based devices on foreign substrates.

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“…How− ever, the high lattice mismatch between the GaSb epilayer and the GaAs substrate (7.8%) complicates the growth of sophisticated device structures. To overcome the problem of this large lattice mismatch, which can lead to a big amount of threading dislocations and high defect density, various buffer layers such as compositionally graded metamorphic buffers [9,10], low temperatures layers [11,12], and super− lattice layers [13] were proposed. Metamorphic buffers' layers have been demonstrated in the growth of AlGaAsSb on GaAs [9] to achieve mid−infrared detectors and lasers.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy

Benyahia

Kubiszyn

Michalczewski

et al. 2016

Opto-Electronics Review

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Non-intentionally doped GaSb epilayers were grown by molecular beam epitaxy (MBE) on highly mismatched semi-insulating GaAs substrate (001) with 2 offcut towards [110]. The effects of substrate temperature and the Sb/Ga flux ratio on the crystalline quality, surface morphology and electrical properties were investigated by Nomarski optical microscopy, X-ray diffraction (XRD) and Hall measurements, respectively. Besides, differential Hall was used to investigate the hole concentration behaviour along the GaSb epilayer. It is found that the crystal quality, electrical properties and surface morphology are markedly dependent on the growth temperature and the group V/III flux ratio. Under the optimized parameters, we demonstrate a low hole concentration at very low growth temperature. Unfortunately, the layers grown at low temperature are characterized by wide FWHM and low Hall mobility.

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Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers

Cited by 14 publications

References 23 publications

Relaxation dynamics and residual strain in metamorphic AlSb on GaAs

Relaxation dynamics and residual strain in metamorphic AlSb on GaAs

Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate

Low-temperature growth of GaSb epilayers on GaAs (001) by molecular beam epitaxy

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