Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary

Семенов, А. Н.; Соловьев, В. А.; Meltser, B. Ya.; Terent'ev, Ya. V.; Prokopova, L.G.; Иванов, С. В.

doi:10.1016/j.jcrysgro.2005.01.007

Cited by 40 publications

(23 citation statements)

References 13 publications

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“…Miscibility problems make it impossible to grow bulk In x Al 1−x As y Sb 1−y alloys with the range of x and y of interest here. 3,5 The impact of any phase separation on the electronic properties of these alloys and the impact on the p-n junctions using them are also uncertain.…”

Section: Introductionmentioning

confidence: 99%

Narrow band gap InGaSb, InAlAsSb alloys for electronic devices

Magno¹,

Glaser²,

Tinkham³

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Section: Introductionmentioning

confidence: 99%

Narrow band gap InGaSb, InAlAsSb alloys for electronic devices

Magno¹,

Glaser²,

Tinkham³

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…The lack of information on the growth of Al x In 1-x As y Sb 1-y with Al mole fractions around 0.5 at a T g above 400 • C suggests that challenges, possible due to the presence of a miscibility gap [8], arise from such conditions. Since high crystal quality is expected to be achieved at high T g , the upper limit for the growth of Al x In 1-x As y Sb 1-y and the dependence of the crystal quality on the T g have to be investigated.…”

Section: Growth Optimization Of Al X In 1-x As Y Sb 1-ymentioning

confidence: 99%

“…An overview of the compositions and the respective growth temperatures is given in Figure 1. Turner et al [6] and Wilk et al [7] report on the growth Al x In 1-x As y Sb 1-y with Al mole fractions below 0.20 at growth temperatures (T g ) of 430 • C and 420 • C, while Semenov et al [8] show that compositions with Al mole fractions of up to 0.25 can be grown at a T g of 450 • C to 500 • C. For the greatest flexibility when it comes to designing devices employing Al x In 1-x As y Sb 1-y , composition with higher Al mole fractions have to be investigated and conditions have to be found which suit the widest range of compositions. The growth of Al x In 1-x As y Sb 1-y on GaAs with higher Al mole fractions is reported at a T g well below 400 • C. Kudo et al [9] studied the incorporation of Sb into Al x In 1-x As y Sb 1-y with an Al mole fraction of 0.5 at a T g of 350 • C grown on GaAs.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Crystal Quality of AlxIn1-xAsySb1-y for Terahertz Quantum Cascade Lasers

et al. 2016

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Abstract:This work provides a detailed study on the growth of Al x In 1-x As y Sb 1-y lattice-matched to InAs by Molecular Beam Epitaxy. In order to find the conditions which lead to high crystal quality deep within the miscibility gap, Al x In 1-x As y Sb 1-y with x = 0.462 was grown at different growth temperatures as well as As 2 and Sb 2 beam equivalent pressures. The crystal quality of the grown layers was examined by high-resolution X-ray diffraction and atomic force microscopy. It was found that the incorporation of Sb into Al 0.462 In 0.538 As y Sb 1-y is strongly temperature-dependent and reduced growth temperatures are necessary in order to achieve significant Sb mole fractions in the grown layers. At 480 • C lattice matching to InAs could not be achieved. At 410 • C lattice matching was possible and high quality films of Al 0.462 In 0.538 As y Sb 1-y were obtained.

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“…Unlike the binary compounds, ternary and quaternary alloys are generally not thermodynamically stable in the whole range of compositions but present a gap of miscibility depending on the temperature of their formation. 26,27 Regarding AlInAsSb, the calculations suggest a large gap at 723 K. 28 Purely thermodynamic considerations are obviously not sufficient. The epitaxial growth is an out-of-equilibrium process that allows the growth of metastable compositions, reducing the miscibility gap.…”

Section: A Mechanismsmentioning

confidence: 99%

Formation of strained interfaces in AlSb/InAs multilayers grown by molecular beam epitaxy for quantum cascade lasers

Nicolaï

Warot-Fonrose

Gatel

et al. 2015

Journal of Applied Physics

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In 0.68 Ga 0.32 As ∕ Al 0.64 In 0.36 As ∕ In P 4.5 μ m quantum cascade lasers grown by solid phosphorus molecular beam epitaxy J. Vac. Sci. Technol. B 25, 913 (2007); 10.1116/1.2740287 Room-temperature operation of InGaAs/AlInAs quantum cascade lasers grown by metalorganic vapor phase epitaxy Appl. Phys. Lett. 83, 1921Lett. 83, (2003; 10.1063/1.1609055Structural and transport characterization of AlSb/InAs quantum-well structures grown by molecular-beam epitaxy with two growth interruptions Molecular beam epitaxial growth of InAs/AlGaAsSb deep quantum well structures on GaAs substratesStructural and chemical properties of InAs/AlSb interfaces have been studied by transmission electron microscopy. InAs/AlSb multilayers were grown by molecular beam epitaxy with different growth sequences at interfaces. The out-of-plane strain, determined using high resolution microscopy and geometrical phase analysis, has been related to the chemical composition of the interfaces analyzed by high angle annular dark field imaging. Considering the local strain and chemistry, we estimated the interface composition and discussed the mechanisms of interface formation for the different growth sequences. In particular, we found that the formation of the tensile AlAs-type interface is spontaneously favored due to its high thermal stability compared to the InSb-type interface. We also showed that the interface composition could be tuned using an appropriate growth sequence. V C 2015 AIP Publishing LLC. [http://dx.

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Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary

Cited by 40 publications

References 13 publications

Narrow band gap InGaSb, InAlAsSb alloys for electronic devices

Narrow band gap InGaSb, InAlAsSb alloys for electronic devices

Enhanced Crystal Quality of AlxIn1-xAsySb1-y for Terahertz Quantum Cascade Lasers

Formation of strained interfaces in AlSb/InAs multilayers grown by molecular beam epitaxy for quantum cascade lasers

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