Molecular beam epitaxy growth of the highly conductive oxide SrMoO3

Takatsu, Hiroshi; Yamashina, Naoya; Shiga, Daisuke; Yukawa, Ryu; Horiba, Koji; Kumigashira, Hiroshi; Terashima, Takahito; Kageyama, Hiroshi

doi:10.1016/j.jcrysgro.2020.125685

Cited by 11 publications

(7 citation statements)

References 30 publications

(54 reference statements)

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“…Our films display metallic behavior at all temperatures, with a room-temperature resistivity between 60 and 70 µΩ cm and a residual-resistivity ratio (RRR) of ≈ 1.5. The resistivity of our samples is comparable to previously reported data from SrMoO 3 thin films grown by PLD [37,38], although the best-quality films reported in the literature are about 2 − 3 times more conductive [18,19,39]. The resistivity of all films closely follows the Fermi liquid form ρ(T ) = ρ 0 + AT 2 , with A = 3.8(1) • 10 −10 Ω cm/K 2 up to ≈ 100 K. Further de-tails regarding the growth and characterization can be found in the Supplementary Information.…”

supporting

confidence: 90%

“…High-quality epitaxial thin films of SrMoO 3 have been successfully grown by pulsed-laser deposition (PLD) on SrTiO 3 and GdScO 3 substrates, with the most conductive ones reaching a room-temperature resistivity of 20 µΩ cm [18]. Recently, thin films with similar resistivity were also obtained by molecular beam epitaxy on KTaO 3 substrates with an SrTiO 3 buffer layer and were characterized by soft X-ray angle-resolved photoelectron spectroscopy (ARPES) [19].…”

mentioning

confidence: 99%

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Electronic structure of the highly conductive perovskite oxide SrMoO$_3$

E.¹,

Hampel²,

Chikina³

et al. 2022

Preprint

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supporting

confidence: 90%

mentioning

confidence: 99%

Electronic structure of the highly conductive perovskite oxide SrMoO$_3$

E.¹,

Hampel²,

Chikina³

et al. 2022

Preprint

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“…The room-temperature resistivities are 49 µΩ cm and 32 µΩ cm for SrVO 3 and SrMoO 3 , respectively, which is fairly low compared to other reports of epitaxial thin film samples, ranging from 25-200 µΩ cm (24-117 µΩ cm). [4,27,[38][39][40][41][42] The room temparature resistivities of the mixed compositions lie in between the values of the end members. All films show metallic behavior (cf.…”

Section: Resistivity and Transport Propertiesmentioning

confidence: 99%

Tailoring Optical Properties in Transparent Highly Conducting Perovskites by Cationic Substitution

et al. 2022

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“…To resolve the poor wettability of SMO on CNO nanosheets (see Figure S1, Supporting Information) and its favorable wettability on STO reported earlier, [11,34,35] we introduced a 10 unitcells, or 4 nm, STO buffer layer grown on the CNO nanosheets. With this, we achieved the growth of highly crystallized single out-of-plane oriented-(001) SMO thin films (Figure 1b), confirmed by the out-of-plane lattice constant of 3.97 Å (close to the bulk value of SMO) calculated from reflections of SMO in Figure 1b.…”

Section: The Growth Of 4d Correlated Metal Films On Ca 2 Nb 3 O 10 Na...mentioning

confidence: 99%

“…It has been shown that SMO has a better wettability on STO compared to Sc-based substrates, resulting in a different microstructure and thus higher carrier mobility for the grown films on STO. [11,34,35] We grew a sample with an additional 10 unit-cells STO on 100 nm DSO buffer layer. The 12 nm SMO film had a resistivity of 237 µΩ cm, lower than that on only 100 nm DSO buffer layer because of the higher carrier mobility.…”

Section: Transport Propertiesmentioning

confidence: 99%

Correlated Metals Transparent Conductors with High UV to Visible Transparency on Amorphous Substrates

Répécaud

et al. 2022

Adv Materials Inter

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strategy for conventional transparent conducting oxides (TCOs) is to resort to degenerately dope wide-bandgap semiconductors to achieve the two key properties: electrical conductivity and optical transparency. Wide bandgap semiconductors are selected as host materials, which have the interband transitions above the visible spectrum, whereas dopants increase carrier density and thus electrical conductivity. Tin-doped indium oxides (ITOs) have been widely used because of its best balance of high electrical conductivity and optical transparency in the visible spectrum. [3] However, the increasing use of ITO as TCOs has resulted in the increase in the cost of ITO due to the limited availability of indium ore. [4] Meanwhile, many other applications, such as solar blind detection, ultraviolet (UV) lithography, UV light-emitting diodes, and UV curing, require transparent conductors in the UV spectrum. [5][6][7][8] However, conventional TCOs with high conductivity present low transmittance on the UV side of the spectrum. [1] Recently, an alternative design strategy has been proposed to use correlated metals with the intrinsic high carrier density exhibiting strong electron correlations to achieve both high electrical conductivity, thus low resistivity, and optical transparency in the UV-visible spectral range, overcoming the limitations of conventional TCOs. [9][10][11][12][13][14][15][16][17][18][19] It has been shown that as correlated metal films on single crystal substrates get thin, they maintain low resistivity and thus low sheet resistance at room temperature (RT) whereas their optical transmittance is comparable to (or higher than) conventional TCOs in the visible (or UV) spectrum. [9,10,17] However, the epitaxy so far required expensive and size-limited single crystal substrates, which impedes the application of correlated metals as TCOs.Meanwhile, oxide nanosheets drew attention because they can be used as buffer layers to promote the growth of highquality and thus high-performance transition metal oxide films regardless the supporting substrates. [20][21][22][23][24][25][26] Almost full coverage of oxide nanosheets can be obtained on virtually any flat substrates without the limitation of the substrate size by using Langmuir-Blodgett method. [21,24,25] Boileau et al. showed that correlated CaVO 3 and SrVO 3 (SVO) films with a thickness of 40 nm on Ca 2 Nb 3 O 10 (CNO) nanosheets on glass had the RT Correlated metals with high carrier density and strongly correlated electron effects provide an alternative route to achieve transparent conducting materials, different from the conventional degenerately doped wide-bandgap transparent conducting oxides (TCO). The extremely low electrical resistivity and high optical transparency in the ultraviolet-visible spectral range shown in 4d correlated metals present an advantage over conventional TCOs. However, most of the 4d correlated metals are grown epitaxially on single crystal substrates. Here, it has been shown that Ca 2 Nb 3 O 10 nanosheets with different buffer laye...

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Molecular beam epitaxy growth of the highly conductive oxide SrMoO3

Cited by 11 publications

References 30 publications

Electronic structure of the highly conductive perovskite oxide SrMoO$_3$

Electronic structure of the highly conductive perovskite oxide SrMoO$_3$

Tailoring Optical Properties in Transparent Highly Conducting Perovskites by Cationic Substitution

Correlated Metals Transparent Conductors with High UV to Visible Transparency on Amorphous Substrates

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