Molecular beam epitaxy growth of high mobility InN film for high-performance broadband heterointerface photodetectors

Imran, Ali; Sulaman, Muhammad; Shen, Yang; Bukhtiar, Arfan; Qasim, Muhammad; Elshahat, Sayed; Khan, Muhammad Saddique Akbar; Dastgeer, Ghulam; Zou, B. S.; Yousaf, Muhammad

doi:10.1016/j.surfin.2022.101772

Cited by 28 publications

(30 citation statements)

References 35 publications

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“…[9,10] Currently, photodetectors have been reported with significant performance based on InGaAs, Si, GaN, PdSe, MoS 2 , HgTe, etc. [11][12][13] However, these materials are facing many technical challenges, such as complex manufacturing process, low operating temperature, etc. Semiconducting nanomaterials have attracted widespread attention in the scientific community due to their excellent performance in various fields.…”

Section: Introductionmentioning

confidence: 99%

Hybrid Bulk‐Heterojunction of Colloidal Quantum Dots and Mixed‐Halide Perovskite Nanocrystals for High‐Performance Self‐Powered Broadband Photodetectors

Sulaman

Yang

Bukhtiar

et al. 2022

Adv Funct Materials

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Self-powered broadband photodetectors exhibit excellent self-powered and wide-band photoresponse from visible to infrared region and attract enormous attention due to their promising applications in imaging, sensing, and optical communication. PbSe colloidal quantum dots (CQDs) and halide perovskites nanocrystals (NCs) are commonly used for photodetectors due to their strong absorption capability, tunable bandgap, and high aspect ratio. However, due to suffering from low charge carrier mobility and high trap density, the performance of individual PbSe CQDs and perovskites-based photodetectors is not satisfactory. Integration of PbSe CQDs with inorganic mixed-halide perovskite nanomaterials can provide an opportunity to overcome these drawbacks. In this work, a hybrid nanocomposite of PbSe CQDs blended with all-inorganic mixed halide perovskite NCs is integrated to fabricate bulk-heterojunction-based high-performance photodetectors. The transportation of photogenerated carriers is enhanced by employing electrons-and holes-extracting layers. As a result, the photoresponsivity of 6.16 A W −1 and a specific detectivity of 5.96 × 10 13 Jones with an ON/OFF current ratio of 10 5 is obtained for bulk-heterojunction photodetector ITO/ZnO/PbSe:CsPbBr 1.5 I 1.5 /P3HT/Au in the self-powered mode. Meanwhile, the device performance of the fabricated photodetector is numerically simulated by using Technology Computer-Aided Design software, and the physical mechanisms for photogenerated carriers' transportation are discussed in detail.

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Section: Introductionmentioning

confidence: 99%

Hybrid Bulk‐Heterojunction of Colloidal Quantum Dots and Mixed‐Halide Perovskite Nanocrystals for High‐Performance Self‐Powered Broadband Photodetectors

Sulaman

Yang

Bukhtiar

et al. 2022

Adv Funct Materials

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“…This work provides valuable guidance for realizing ultrafast photodetectors by axial NRA heterojunction. Firstly, this manuscript not only provides a strategy to break through the material arrangement limit of the bandgap but also introduces a method to prepare a InN/GaN Heterostructure 260 ms/780 ms 37.07@-1.1V [54] InN/AlN/Si Heterostructure 10 ms/18 ms 3.3×10 −6 @0V [55] relatively evenly NRA heterojunction. Secondly, the photodetectors based on the NRA heterojunction reveal outstanding performance.…”

Section: Discussionmentioning

confidence: 99%

Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed

Chai

Liu

Chen

et al. 2023

Adv Elect Materials

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requires the photodetection wavelength of the photo detector could match the source wavelength. [4][5][6] In this regard, the bandgap tunable semiconductor and its fabricated photodetector with fast response speed have become a research hotspot. [7][8][9] InGaN semiconductors can achieve wavelength-selective absorption owning to their tunable bandgap (0.65-3.4 eV), which is adjusted by varying the composition of Indium (In). [10][11][12] Thanks to the development of semiconductor industry technology, the InGaN photodetector with PIN and integrated structure has been used in visible light communication systems. [13][14][15] However, the above InGaN-based ultrafast photodetector heavily relies on expensive, slow, complex material growth and chip preparation processes. [16] Accordingly, the development of a simple-structured photodetector with a fast response speed is urgently needed. [17] The photodetector with simple heterojunction demonstrates fast photodetection owing to the built-in electric field to facilitate carrier separation and transport. [18,19] Among the III-nitrides materials, on account of the high electron mobility (4400 cm 2 V −1 s −1 ), the InN semiconductors are widely used to fabricate fast photodetectors. [20,21] Regarding the mentioned above, the InN/InGaN heterojunction is considered a promising candidate for preparing a fast photodetector. This is well known that the high-performance photodetector composed of wide band gap materials lies on top of the narrow band gap materials, thus the InGaN should be grown on the top of InN. [22] However, this InN/InGaN heterojunction cannot be realized due to the growth temperature of InGaN is higher than the dissociation temperature of InN.The dilemma above might be solved by introducing 1D InN nanorod array (NRA) to InGaN films, which could not only relax the strain to form defect-free lattice-mismatched heterostructures but also break through the material arrangement limit of the bandgap. [23,24] Previous research has reported an InN/InGaN heterojunction with the structure of InN NRA on the InGaN epilayer and applied it to optoelectronic devices. [25,26] Nevertheless, this method needs phase-separated from In-rich InGaN buffer as the nucleation sites, which will cause the diameter uniformity of these structures to be poor. The axial heterojunction structure is an effective strategy, on one hand, the diameter uniformity of InN could be controlled, on the other hand, the 1D geometry could confine carriers separation in a very small NRA Due to wavelength-selective characteristics, the InGaN-based photodetectors show bright prospects in visible light communication and fast imaging system. However, the application of InGaN photodetectors with simple structures is limited in the above field owing to the slow response speed. Herein, an ultrafast photodetector based on axial InN/InGaN nanorod array (NRA) heterojunction is prepared through a self-catalytic high (930 °C) and low (400 °C) temperature two-step growth method by molecular beam epitaxy (MBE). The perf...

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“…Emerging materials, such as III-nitride-based semiconducting materials, two-dimensional materials, organic materials, and perovskite materials, have received a lot of attention in recent years. [9][10][11][12][13][14][15][16][17][18][19] Among the III-nitride family, InN materials are attractive for optoelectronic device applications due to their suitable bandgap and high electron mobility. 19 Ali et al fabricated the high-quality InN/GaN heterointerface and obtained high-performance broadband PDs.…”

Section: Introductionmentioning

confidence: 99%

“…19 Ali et al fabricated the high-quality InN/GaN heterointerface and obtained high-performance broadband PDs. 17 Two-dimensional materials with excellent transparency, extraordinary flexibility, high conductivity, and direct bandgaps have been successfully used not only as electrodes but also as active layers in optoelectronic devices. 18 Zhang et al employed two-dimensional materials of Ta 2 NiSe 5 and GaSe to construct a VIS-near infrared (NIR) dual-band photodetector with a heterogeneous structure.…”

Section: Introductionmentioning

confidence: 99%

Band-engineered dual-band visible and short-wave infrared photodetector with metal chalcogenide colloidal quantum dots

Zhao

Qin

et al. 2023

J. Mater. Chem. C

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Molecular beam epitaxy growth of high mobility InN film for high-performance broadband heterointerface photodetectors

Cited by 28 publications

References 35 publications

Hybrid Bulk‐Heterojunction of Colloidal Quantum Dots and Mixed‐Halide Perovskite Nanocrystals for High‐Performance Self‐Powered Broadband Photodetectors

Hybrid Bulk‐Heterojunction of Colloidal Quantum Dots and Mixed‐Halide Perovskite Nanocrystals for High‐Performance Self‐Powered Broadband Photodetectors

Axial InN/InGaN Nanorod Array Heterojunction Photodetector with Ultrafast Speed

Band-engineered dual-band visible and short-wave infrared photodetector with metal chalcogenide colloidal quantum dots

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