Molecular beam epitaxy growth of PbSe on BaF2-coated Si(111) and observation of the PbSe growth interface

Abstract

Epitaxial growth of PbSe/BaF 2 /CaF 2 heterostructures was carried out by molecular beam epitaxy ͑MBE͒ on Si͑111͒ wafers. Successful transfer of 3-m-thick PbSe epilayers was accomplished by bonding the MBE-grown samples face down to polished copper plates followed by the removal of the silicon substrate by dissolving the BaF 2 buffer layer in water. High-resolution x-ray diffraction measurements demonstrated that the PbSe epilayer maintained high-crystalline quality after transfer. In addition, optical Nomarski characterization of the exposed growth interface showed sets of parallel straight step lines consistent with glide of dislocations in the primary ͕100͖͗110͘ glide system. Such features are evidence of the large thermal expansion mismatch strain that occurred in these layers.

EPITAXY and orientation control in chemical solution deposited PbS and PbSe monocrystalline films

“…The physico-chemical properties of lead chalcogenides (PbS, PbSe and PbTe) have much in common: they have similar chemical bonding and the same crystallographic structure, similar phase diagrams and they can be similarly doped. Heterojunctions for integrated photonic devices [7,8] require single-crystal thin film materials that are heteroepitaxially grown on Si or III-V substrates. Until now, heteroepitaxy of PbSe and PbS was mostly achieved by sophisticated, high-cost techniques, which require high and ultrahigh vacuum environment such as molecular beam epitaxy.…”

Above-room-temperature continuous-wave mid-infrared photoluminescence from PbSe/PbSrSe quantum wells

“…9 In addition, IV-VI semiconductor materials can be grown on substrates with BaF 2 buffer layers, and this allows removal of the growth substrate by dissolving the BaF 2 buffer with water. 10 This technique can be used to fabricate lasers with much improved active region heat dissipation possibly enabling cw operation at room temperature. 11 In this work, IV-VI quantum-well structures were grown on BaF 2 ͑111͒ substrates by MBE.…”

Characterization of SnTe films grown by molecular beam epitaxy

“…This kind of compound finds application in the construction of thermoelectric generators and infrared detectors [4][5]. The study of structural properties of IV-VI compounds related to misfit and threading dislocations in systems like PbTe, PbSe and PbTe 1−x Se x deposited on different substrates, such as KCl, BaF 2 , Si and PbSe have been done by several groups [6][7][8][9][10].…”