Molecular beam epitaxy growth and optical properties of single crystal Zn<sub>3</sub>N<sub>2</sub>films

Wu, Peng; Tiedje, T.; Alimohammadi, H; Bahrami-Yekta, Vahid; Masnadi-Shirazi, Mostafa; Wang, Wenwen

doi:10.1088/0268-1242/31/10/10lt01

Cited by 15 publications

(19 citation statements)

References 18 publications

(20 reference statements)

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“…The reported carrier concentrations lie mostly in the range 10 18 -3.5 × 10 20 cm −3 [14][15][16][17]28,35,36], which correspond to band gaps of 1.0-1.9 eV, as shown in Fig. 3 FIG.…”

Section: B Carrier-induced Optical-gap Variationmentioning

confidence: 78%

“…In particular, thanks to recent progress in crystal growth techniques, high-quality nitride samplesincluding metastable ones-can now be prepared. One of the attractive nitrides is Zn 3 N 2 [13], whose biggest advantage is its high electron mobility, which exceeds 100 cm 2 V −1 s −1 [14][15][16][17] (the record is 395 cm 2 V −1 s −1 [15]). There have been reports suggesting the use of Zn 3 N 2 as transparent conductors [18], channel layers for optoelectronic devices [19], negative electrodes in Li-ion batteries [20], and precursor films for p-type doped ZnO [21].…”

Section: Introductionmentioning

confidence: 99%

“…There have been reports suggesting the use of Zn 3 N 2 as transparent conductors [18], channel layers for optoelectronic devices [19], negative electrodes in Li-ion batteries [20], and precursor films for p-type doped ZnO [21]. Thus far, Zn 3 N 2 samples have been synthesized using various techniques, such as pulsed-laser deposition [22,23], molecular beam epitaxy [15,16,24], chemical vapor deposition [16,25], electrochemical processes [26], sputtering [17,[27][28][29][30], and ammonolysis reactions [31][32][33]. However, synthesis of high-quality Zn 3 N 2 samples, especially single crystals, is still challenging, presumably due to its nearly zero formation enthalpy [34], and hence its basic properties are not yet well understood.…”

Section: Introductionmentioning

confidence: 99%

“…The most controversial but technologically important physical property of Zn 3 N 2 is the band gap. The reported band gaps of as-grown Zn 3 N 2 range from 0.85 to 3.2 eV [14][15][16]26,[28][29][30][31]33,35,36]. Indeed, experimental gaps of some other nitride semiconductors notoriously scatter as well.…”

Section: Introductionmentioning

confidence: 99%

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Carrier-Induced Band-Gap Variation and Point Defects in Zn3N2 from First Principles

et al. 2017

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The zinc nitride Zn 3 N 2 is composed of inexpensive and earth-abundant Zn and N elements and shows high electron mobility exceeding 100 cm 2 V −1 s −1 . Although various technological applications of Zn 3 N 2 have been suggested so far, the synthesis of high-quality Zn 3 N 2 samples, especially single crystals, is still challenging, and therefore its basic properties are not yet well understood. Indeed, the reported band gaps of as-grown Zn 3 N 2 widely scatter from 0.85 to 3.2 eV. In this study, we investigate the large gap variation of Zn 3 N 2 in terms of the Burstein-Moss (BM) effect and point-defect energetics using first-principles calculations. First, we discuss the relation between electron carrier concentration and optical gaps based on the electronic structure obtained using the Heyd-Scuseria-Ernzerhof hybrid functional. The calculated fundamental band gap is 0.84 eV in a direct-type band structure. Second, thermodynamic stability of Zn 3 N 2 is assessed using the ideal-gas model in conjunction with the rigid-rotor model for gas phases and firstprinciples phonon calculations for solid phases. Third, carrier generation and compensation by native point defects and unintentionally introduced oxygen and hydrogen impurities are discussed. The results suggest that a significant BM shift occurs mainly due to oxygen substitutions on nitrogen sites and hydrogen interstitials. However, gaps larger than 2.0 eV would not be due to the BM shift because of the Fermi-level pinning caused by acceptorlike zinc vacancies and hydrogen-on-zinc impurities. Furthermore, we discuss details of peculiar defects such as a nitrogen-on-zinc antisite with azidelike atomic and electronic structures.

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“…The reported carrier concentrations lie mostly in the range 10 18 -3.5 × 10 20 cm −3 [14][15][16][17]28,35,36], which correspond to band gaps of 1.0-1.9 eV, as shown in Fig. 3 FIG.…”

Section: B Carrier-induced Optical-gap Variationmentioning

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Carrier-Induced Band-Gap Variation and Point Defects in Zn3N2 from First Principles

et al. 2017

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“…Carrier concentrations in the 10 18 -10 19 cm -3 range have been measured by Hall effect in undoped samples grown by magnetron sputtering and molecular beam epitaxy. 2,3 Thin films deposited by radio frequency sputtering present good electrical properties such as high mobility and conductivities in the 10 -2 -10 -3…”

Section: Introductionmentioning

confidence: 99%

Zinc nitride thin films: basic properties and applications

et al. 2017

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Zinc nitride films can be deposited by radio frequency magnetron sputtering using a Zn target at substrate temperatures lower than 250 °C. This low deposition temperature makes the material compatible with flexible substrates. The asgrown layers present a black color, polycrystalline structures, large conductivities, and large visible light absorption. Different studies have reported about the severe oxidation of the layers in ambient conditions. Different compositional, structural and optical characterization techniques have shown that the films turn into ZnO polycrystalline layers, showing visible transparency and semi-insulating properties after total transformation. The oxidation rate is fairly constant as a function of time and depends on environmental parameters such as relative humidity or temperature. Taking advantage of those properties, potential applications of zinc nitride films in environmental sensing have been studied in the recent years. This work reviews the state-of-the-art of the zinc nitride technology and the development of several devices such as humidity indicators, thin film (photo)transistors and sweat monitoring sensors.

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Ultrastable Zn₃N₂ Thin Films via Integration of Amorphous GaN Protection Layers

Sirotti,

Böhm,

Sharp

2024

Adv Materials Inter

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Zinc nitride (Zn3N2) is a promising semiconductor for a range of optoelectronic and energy conversion applications, offering a direct bandgap of 1.0 eV, large carrier mobilities, and abundant constituent elements. However, the material is prone to bulk oxidation in ambient environments, which has thus far impeded its practical deployment. While previous approaches have focused on stabilizing the material via integration of ZnO surface layers, these strategies introduce additional challenges regarding elevated processing temperatures and limited control of interface properties. In this study, it is shown that amorphous GaN thin films can serve as highly stable protection layers on Zn3N2 surfaces and can be deposited at the same growth temperature and in the same deposition system as the underlying semiconductor. The GaN‐capped Zn3N2 structures exhibit long‐term stability, surviving over 3 years of exposure to ambient conditions with no discernible alterations in composition, structure, or electrical properties. Notably, the amorphous GaN coatings can even impede Zn3N2 oxidation under prolonged aqueous exposure. Thus, this study offers a solution to stabilize Zn3N2 in ambient conditions, providing a viable pathway to its utilization in robust and high‐performance electronic devices, such as thin film transistors and solar energy conversion systems.

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Molecular beam epitaxy growth and optical properties of single crystal Zn₃N₂films

Cited by 15 publications

References 18 publications

Carrier-Induced Band-Gap Variation and Point Defects in Zn3N2 from First Principles

Carrier-Induced Band-Gap Variation and Point Defects in Zn3N2 from First Principles

Zinc nitride thin films: basic properties and applications

Ultrastable Zn₃N₂ Thin Films via Integration of Amorphous GaN Protection Layers

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Molecular beam epitaxy growth and optical properties of single crystal Zn3N2films

Cited by 15 publications

References 18 publications

Carrier-Induced Band-Gap Variation and Point Defects in Zn3N2 from First Principles

Carrier-Induced Band-Gap Variation and Point Defects in Zn3N2 from First Principles

Zinc nitride thin films: basic properties and applications

Ultrastable Zn3N2 Thin Films via Integration of Amorphous GaN Protection Layers

Contact Info

Product

Resources

About

Molecular beam epitaxy growth and optical properties of single crystal Zn₃N₂films

Ultrastable Zn₃N₂ Thin Films via Integration of Amorphous GaN Protection Layers