Molecular beam epitaxy growth and characterization of thin (&lt;2 mu m) GaSb layers on GaAs(100) substrates

Иванов, С. В.; Altukhov, P. D.; Argunova, T. S.; Bakun, A. A.; Budza, A. A.; Chaldyshev, V. V.; Kovalenko, Yu. A.; Kop’ev, P. S.; Kutt, R.N.; Meltser, B. Ya.; Ruvimov, S.; Шапошников, С. В.; Sorokin, L. M.; Ustinov, V. M.

doi:10.1088/0268-1242/8/3/008

Cited by 43 publications

(12 citation statements)

References 19 publications

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“…In the case of GaSb buffer layers on GaAs, high densities of threading dislocations form during the coalescence of islands. [17][18][19] The dislocation density decreases as layer thickness increases. Hence, fewer nucleation sites will be available for thicker buffer layers, resulting in less relaxation of the InAs.…”

Section: ͓S0003-6951͑98͒02251-7͔mentioning

confidence: 99%

Strain relaxation in InAs/GaSb heterostructures

Bennett

1998

Applied Physics Letters

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Section: ͓S0003-6951͑98͒02251-7͔mentioning

confidence: 99%

Strain relaxation in InAs/GaSb heterostructures

Bennett

1998

Applied Physics Letters

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“…The high lattice mismatch (7.8%) between GaSb epitaxial layer and GaAs substrate hinders the growth of sophisticated device structures. Nowadays, this mismatch is accommodated either via a metamorphic buffer [4][5][6][7] or more recently, by a periodic interfacial misfit (IMF) array growth mode [8][9][10][11][12][13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

“…The misfit periodicity corresponds to exactly 13 GaSb and 14 GaAs lattice sites. In this way, the strain remains localized at the interface rather than propagating in the vertical direction-dislocations propagate along two directions: [110] and [1][2][3][4][5][6][7][8][9][10]. The GaSb layer is almost completely relaxed with low dislocation density.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system

et al. 2018

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A comprehensive investigation of the interfacial misfit (IMF) array formation has been carried out. The studies were based on the static phase diagram for GaAs (001) surface and As 2 dimers on the surface. Prior to the initiation of the GaSb growth two attempts of the temperature decreasing were performed: before and after the GaAs termination. The GaAs was grown in the optimal conditions for GaSb material. The influence of the interruption time on GaSb/GaAs heterostructure parameters was examined. Two cases were investigated: with and without Sb-soaking of the GaAs surface. The periodic array of edge dislocations at GaSb/GaAs interface was confirmed using Burger's circuit theory. Careful examination of misfit surroundings revealed one uncompleted Burger's vector that indicated one dislocation of mixed type among eight of the edge type. The distance between lattice sites of dislocations was 5.51 nm on average. The crystal quality of 5.0 µm GaSb layer was characterized by FWHM 2θ/ω = 42 arcsec, FWHM RC = 125 arcsec. The EPD = 4 × 10 6 cm − 2 was estimated after etching in FeCl 3 :HCl solution. The Δq z /Δq x ratio of 0.60 for 5.0 µm GaSb layer was higher than for 2.5 µm GaSb layer of 0.59. The probable reason was the thickness-dependent 60° dislocation density. The electrical parameters measured for 2.5 µm GaSb were: p = 4.0 × 10 16 cm −3 (2.0 × 10 16 cm −3 ) and µ = 599 cm 2 /V s (3420 cm 2 /V s) at 300 K (77 K).

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“…19 The concentrations and mobilities at 77K in Table II, where complications due to the type conversion and hopping conduction can be ignored, can be used to compare these samples with the literature values for GaSb grown on semi-insulating substrates. Ivanov et al 20 and Johnson et al 21 are representative of what has been reported for epitaxial GaSb on semi-insulating GaAs substrates. Ivanov et al reported 77 K hole concentrations and mobilities of 1.1x10 16 to 1.5x10 16 cm −3 and 2700 to 4580 cm 2 /Vs while Johnson et al reported 1.5x10 15 to 8x10 15 cm −3 and 756 to 310 cm 2 /Vs at that temperature, to which our values in Table II, 1x10 15 to 2x10 16 cm −3 and 3000 to 7000 cm 2 /Vs, compare favorably.…”

Section: Aip Advances 5 097219 (2015)mentioning

confidence: 77%

Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

et al. 2015

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Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to the superlattices. We report here temperature dependent resistivity and Hall effect measurements of bare substrates and substrate-p-type buffer layer structures grown by molecular beam epitaxy. Multicarrier analysis of the resistivity and Hall coefficient data demonstrate that high temperature transport in the substrates is due to conduction in both the high mobility zone center Γ band and the low mobility off-center L band. High overall mobility values indicate the absence of close compensation and that improved infrared and transport properties were achieved by a reduction in intrinsic acceptor concentration. Standard transport measurements of the undoped buffer layers show p-type conduction up to 300 K indicating electrical isolation of the buffer layer from the lightly n-type GaSb substrate. However, the highest temperature data indicate the early stages of the expected p to n type conversion which leads to apparent anomalously high carrier concentrations and lower than expected mobilities. Data at 77 K indicate very high quality buffer layers. C

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Molecular beam epitaxy growth and characterization of thin (<2 mu m) GaSb layers on GaAs(100) substrates

Cited by 43 publications

References 19 publications

Strain relaxation in InAs/GaSb heterostructures

Strain relaxation in InAs/GaSb heterostructures

Comprehensive investigation of the interfacial misfit array formation in GaSb/GaAs material system

Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

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