Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

Abstract

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Growth of thick CdTe epilayers on GaAs substrates and evaluation of CdTe/n+-GaAs heterojunction diodes for an X-ray imaging detector

“…[1][2][3][4][5] However, most of those investigation were carried out in thin layers of thickness limited to a few microns, as they were mainly investigated as a buffer layer for the HgCdTe growth, which are obviously far from sufficient for the x-ray detector applications. Nuclear radiation detectors, working in energy up to 140 keV, require a thickness of about 500 µm to achieve satisfactory detection efficiency.…”

Metal-organic vapor-phase epitaxy growth and characterization of thick (100) CdTe layers on (100) GaAs and (100) GaAs/Si substrates

“…[1][2][3][4] However, those CdTe-epitaxial layers are mainly investigated as a buffer layer for the HgCdTe growth, and the thickness of those layers was limited up to a few tens of micrometers or even less, which is far The growth characteristics and crystalline quality of thick (100) CdTe-epitaxial layers grown on (100) GaAs and (100) GaAs/Si substrates in a metal-organic vapor-phase epitaxy (MOVPE) system for possible applications in x-ray imaging detectors were investigated. Their well-balanced material characteristics, such as wide bandgap, high average atomic number, and good charge-transport property, make them most attractive detector materials for such a purpose.…”

Structural and Electrical Properties of Heteroepitaxial HgCdTe/CdZnTe/GaAs/Si

“…Epitaxial growth of CdTe on GaAs/Si composite wafers has been demonstrated previously using congruent vacuum evaporation from a CdTe source [3][4][5][6] and using MOCVD for the growth of CdTe [7][8][9] and the alloy CdZnTe [10,11].…”