Molecular Beam Epitaxy and High-Pressure Studies of van der Waals Magnets

O'Hara, Dante

doi:10.2172/1562380

Cited by 1 publication

(1 citation statement)

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“…Gallium arsenide exhibits hybrid functionality by combining its natural characteristics as a high‐efficiency semiconductor with manganese‐induced magnetism, which makes it appealing for the creation of innovative devices with integrated electrical and magnetic capabilities. [ 26,27 ] The optical and magneto‐optical properties of Mn‐doped gallium arsenide are especially interesting. For example, the emission or absorption of light can be affected by external magnetic fields, which is important for optical and optoelectronic applications like lasers, photodetectors, and magneto‐optical modulators.…”

Section: Introductionmentioning

confidence: 99%

Effects of manganese concentration and temperature on the ferromagnetism of manganese‐doped gallium arsenide semiconductor

Abera,

Mekuye

2023

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The main objective of the review was to investigate the ferromagnetism of diluted magnetic semiconductors made of Mn‐doped GaAs. Manganese‐doped gallium arsenide has recently become an important field of research because of its potential applications in the fields of spintronics and magnetic devices. The magnetic moment caused by adding manganese to the GaAs crystal structure causes a low‐temperature ferromagnetic behavior. The main factor that affects the ferromagnetic properties of Mn‐doped gallium arsenic is manganese concentration. Understanding the relationship between Mn concentration and magnetic properties is important for material optimization in specific applications. It was found that Mn‐doped GaAs exhibit paramagnetic behavior below a specific critical concentration. However, the substance is transformed into a ferromagnetic state over the maximum concentration. The Curie temperature is an important additional factor influencing the ferromagnetic properties of Mn‐doped GaAs. The temperature at which a material ceases to exhibit ferromagnetic behavior is known as the Curie temperature. The Curie temperature of a material depends on its Mn concentration, thin film thickness, and degree of disturbance. A reduction in magnetic resistance increases the concentration of Mn‐treated gallium arsenic and increases its rate as it reaches its maximum value. High Curie temperatures are the result of stronger magnetic interactions resulting from higher manganese concentrations. The specific heat capacity of Mn‐doped gallium arsenide is influenced by its magnetic and structural contribution.

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Section: Introductionmentioning

confidence: 99%