Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers

Yang, Xiaodong; Jurkovic, M. J.; Héroux, J. B.; Wang, W. I.

doi:10.1063/1.124311

Cited by 181 publications

(98 citation statements)

References 18 publications

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“…1 Although promising results have been obtained for Sb-free 1.5 m lasers grown by metal organic vapor phase epitaxy 2 and molecular beam epitaxy ͑MBE͒, 3,4 more rapid progress towards longer wavelength cw operation has been made with the quinary material [5][6][7][8] which benefits from the Sb surfactant effect. 1,9 In this letter we report GaInNAsSb/ GaNAs double quantum well ͑QW͒ ridge waveguide ͑RWG͒ lasers with a room-temperature cw lasing wavelength of 1.56 m. The devices were burned in for 100 h to evaluate their reliability and to ensure stability for subsequent measurements. The temperature performance was studied between 5 and 45°C in cw mode.…”

Section: Gain and Lifetime Of Gainnassb Narrow Ridge Waveguide Laser mentioning

confidence: 99%

Gain and lifetime of GaInNAsSb narrow ridge waveguide laser diodes in continuous-wave operation at 1.56μm

Gupta

Barrios

Caballero

et al. 2006

Applied Physics Letters

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Section: Gain and Lifetime Of Gainnassb Narrow Ridge Waveguide Laser mentioning

confidence: 99%

Gain and lifetime of GaInNAsSb narrow ridge waveguide laser diodes in continuous-wave operation at 1.56μm

Gupta

Barrios

Caballero

et al. 2006

Applied Physics Letters

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“…2 A few years later, Yang et al 3 demonstrated that the addition of Sb to dilute nitrides dramatically improves the material and optical quality, reduces the band gap, and modifies the band gap line-up in GaInNAs/ GaAs quantum wells ͑QWs͒. Significant progress was made in this area, [4][5][6] leading to roomtemperature continuous-wave operation at 1.55 m and recently single mode GaInNAsSb/ GaNAs QW based distributed feedback lasers at the same wavelength were demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers

Piwoński¹,

Pulka²,

Madden³

et al. 2009

Journal of Applied Physics

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The gain and refractive index dynamics of dilute nitride antimonide semiconductor optical amplifiers are studied using heterodyne pump probe spectroscopy, both in forward and reverse bias regimes. In the forward biased absorption regime, both gain and refractive index relax on the same timescale indicating that both quantities are linked to the same relaxation process, interband recombination. Above transparency, in the forward biased gain regime, the gain and phase exhibit differing timescales resulting in a dynamical alpha factor that varies strongly with time. Reversed bias measurements suggest a recombination dominated absorption recovery where the recovery timescale increases with increasing reversed bias, possibly due to charge separation effects.

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“…1. Thus, atomic H can be regarded as a suitable surfactant in the MBE growth of Ga(In)NAs similar to the use of Sb reported by Yang et al [13]. Thus, we conclude that using atomic H as a surfactant and self-incorporation of H atoms for the suppression of active defects in GaNAs and GaInNAs should help to improve the overall crystal quality of these materials.…”

mentioning

confidence: 80%

Effects of Atomic Hydrogen on the Growth of Ga(In)NAs by RF‐Molecular Beam Epitaxy

Ohmae

Matsumoto

Kawabe

et al. 2002

phys. stat. sol. (c)

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PACS : 71.55.Eq; 78.66.Fd; 81.15.Hi; 82.70.Uv In this work, we have investigated the effect of atomic H irradiation on the thin-film growth of GaNAs and GaInNAs by RF-molecular beam epitaxy from the viewpoint of growth dynamics and crystal quality. The crystal quality of Ga(In)NAs was mainly characterized by X-ray diffraction and the surface morphology was characterized by using atomic force microscope. The atomic H irradiation during the growth of GaNAs and GaInNAs in RF-molecular beam epitaxy was found to be effective in improving the overall quality of these epilayers. Further, it was found that atomic H irradiation has an effect of suppressing the three-dimensional growth thereby promoting a twodimensional growth as well as is effective in passivating the defects and suppressing the phase separation. These results should bring further improvements of novel structures that require abrupt interfaces in GaNAs and GaInNAs based devices.Introduction GaNAs and GaInNAs are the representative III-V-N semiconductors, which have strongly sublinear bandgap energy dependence between GaAs and GaN with a much larger alloy bandgap bowing parameter than for any other ternary semiconductors. Recently, GaNAs and GaInNAs have been popularly investigated as new material systems for long wavelength devices fabricated on GaAs substrates such as lasers emitting at the optical-fiber communication wavelength window (1.3-1.55 mm). The application of GaInNAs in the active region should result in lasers with a high characteristic temperature T 0 , and GaInNAs lasers with high characteristic T 0 have already been realized [1,2]. For multi-junction GaInP 2 /GaAs/GaInNAs/Ge solar cells, GaInNAs can be lattice matched to GaAs and tuned in its bandgap to around 1.0 eV, which is an optimized bandgap to achieve the highest efficiencies [3][4][5]. However, in comparison the optical quality of GaInNAs is generally inferior to that of conventional III-V semiconductor materials without N, such as InGaAs. At higher N concentrations which exhibit a strong red shift, the crystal quality of Ga(In)NAs is degraded, but the physical origin of which is not fully understood. The hydrogen species are thought to cause a quenching of PL intensity in as-grown GaInNAs since a large amount of hydrogen are incorporated in gas-source molecular beam epitaxy (GS-MBE) [6], metal organic chemical vapor deposition (MOCVD) [7], and chemical beam epitaxy (CBE) [8,9].In this work, we show that irradiation of atomic H during the growth of GaNAs and GaInNAs in RF-molecular beam epitaxy (MBE) improves the quality of these materials. We have previously shown that the irradiation of atomic H during GaAs [10], and GaN [11] growths in MBE significantly improves the crystal quality of the films. As a continuing effort, we have investigated the effects of atomic H irradiation on growth dynamics and crystal quality.

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Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers

Cited by 181 publications

References 18 publications

Gain and lifetime of GaInNAsSb narrow ridge waveguide laser diodes in continuous-wave operation at 1.56μm

Gain and lifetime of GaInNAsSb narrow ridge waveguide laser diodes in continuous-wave operation at 1.56μm

Ultrafast gain and refractive index dynamics in GaInNAsSb semiconductor optical amplifiers

Effects of Atomic Hydrogen on the Growth of Ga(In)NAs by RF‐Molecular Beam Epitaxy

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