Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-
	    
	    
μ
m

	    
	   quantum dot lasers*

Hao, Huiming; Su, Xiaolu; Zhang, Jing; Ni, Haiqiao; Niu, Zhichuan

doi:10.1088/1674-1056/28/7/078104

Cited by 3 publications

(2 citation statements)

References 33 publications

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“…All other growth parameters remained identical, as shown in table 1. GaAs substrates [20] . Figure 4 shows the photoluminescence (PL) test of inequable deposition amount of indium under room temperature.…”

Section: Methodsmentioning

confidence: 99%

High density and uniformity 1300 nm InAs/GaAs quantum dots grown on silicon substrate through molecular beam epitaxy

Hao

Liu

et al. 2022

J. Phys.: Conf. Ser.

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The integration of III/V materials into silicon-based microelectronics has been the momentum in the development progress of silicon photonics in the past few decades. In this paper, the growth of InAs/GaAs quantum dots with the high density of 6.5 × 1010/cm2 on silicon substrate is demonstrated. The influence of different deposition amount of indium on the density of quantum dots under the same arsenic flux pressure is discussed in detail, from 2.21 monolayer, 2.38 monolayer to 2.55 monolayer. Atomic force microscopy measurement and photoluminescence test are conducted to characterize the materials growth. The InAs/GaAs quantum dots exhibit the best dot density and size uniformity as well as the strongest intensity of photoluminescence at the deposition amount of 2.38 monolayer. This result provides stable foundation for the realization of III/V quantum dot materials as the photonic components into silicon-based lasers.

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Section: Methodsmentioning

confidence: 99%

High density and uniformity 1300 nm InAs/GaAs quantum dots grown on silicon substrate through molecular beam epitaxy

Hao

Liu

et al. 2022

J. Phys.: Conf. Ser.

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“…[8,9] However, it is difficult to fabricate As-based high-performance QD lasers using MOCVD. [10,11] MBE is a more suitable method, and the interruption growth mode of QDs, [12] growth temperature [13] and multistacking QD layers [14,15] are factors proposed to enhance the surface dot density. While these do improve the dot density to (4-5)×10 10 cm −2 , introduction of single large QDs is also seen and this degrades the QD uniformity.…”

Section: Introductionmentioning

confidence: 99%

High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers

Shao

Hao

et al. 2023

Chinese Phys. B

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Here we report the 1.3-μm electrical injection lasers based on the InAs/GaAs quantum dot (QD) grown on GaAs substrate, which can steadily work at 110℃ without visible degradation. The QD structure is designed by applying the Stranski-Krastanow growth mode of solid source molecular beam epitaxy. The density of InAs quantum dots in the active region is increased from 3.8×1010 cm -2 to 5.9×1010 cm -2. For lasers performance, the maximum output power of devices with low density quantum dots as active region is 650mW at room temperature, and that of devices with high density is 1030mW. Meanwhile the output power of high density device is 131 mW under the injection current of 4 A at 110℃.

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Monolithic integration of 1.3 μm asymmetric lasers grown on silicon and silicon waveguides with tapered coupling

Jia¹,

Wang²,

Ge³

et al. 2022

Laser Phys.

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We proposed a design scheme to enable the monolithic integration between a silicon waveguide and a 1.3 μm wavelength band III–V quantum dot laser, which is epitaxially grown on silicon with an asymmetric structure. The III–V laser is grown in a deep trench of a silicon-on-insulator wafer by the selective area epitaxy technique, and a GaAs coupling layer is inserted into the lower cladding layer of the laser, which can make the optical field distribution of the laser shift down. Besides, a mode-size converter with a three-segment tapered structure is designed to couple the output laser into the standard single-mode silicon waveguide. For the laser, the composition and the thickness of AlGaAs cladding layers and AlGaAs transition layer are optimized based on the optical waveguide theory. When the upper cladding layer is 0.6 μm Al0.7Ga0.3As, the lower cladding layer is 1.2 μm Al0.25Ga0.75As, and the transition layer is 20 nm Al0.45Ga0.55As, the optical confinement factors of the active region and the coupling layer are 45.34% and 40.69%, respectively. Then the length of the mode-size converter with a three-segment tapered structure is further optimized by the mode-matching method. When the lengths of the three tapered structures of the mode-size converter are 50 μm, 53 μm and 10 μm respectively, a coupling efficiency of 65% can be obtained between the laser and the Si waveguide. This scheme is expected to realize the efficient optical coupling between the silicon integrated light source and the silicon waveguide, which will promote the development of silicon monolithic photonic integration.

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Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3- μ m quantum dot lasers*

Cited by 3 publications

References 33 publications

High density and uniformity 1300 nm InAs/GaAs quantum dots grown on silicon substrate through molecular beam epitaxy

High density and uniformity 1300 nm InAs/GaAs quantum dots grown on silicon substrate through molecular beam epitaxy

High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers

Monolithic integration of 1.3 μm asymmetric lasers grown on silicon and silicon waveguides with tapered coupling

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