Molecular beam epitaxial growth of InAs self-assembled quantum dots with light-emission at 1.3μm

Impact of nitrogen incorporation on pseudomorphic site-controlled quantum dots grown by metalorganic vapor phase epitaxy

“…Emission energies can be tuned by modifying the dot dimensions and/or the dot-barriers band discontinuity. 1 A fine tuning of the exciton/biexciton binding energy can be achieved through a size scalability mechanism or via the application of electro-magnetic fields. 2 Strain induced, electric and magnetic fields can be used to reduce the built-in asymmetries which produce a fine structure splitting ͑FSS͒ in the cascade biexciton/exciton pair, critical for a reliable source of entangled photons.…”

Formation of columnar (In,Ga)As quantum dots on GaAs(100)

“…These include QD stacking, reduction of the growth rate, and interrupted growth to control the effective QD size and shape; and the overgrowth by strain reducing ͑In,Ga͒As and ͑In,Al͒As layers. [4][5][6][7][8] We have recently introduced leveling and rebuilding of InAs QDs on GaAs͑100͒ substrates during molecular beam epitaxy (MBE) of multiple ultrathin GaAs/ InAs overlayers which drastically improves the QD size uniformity and optical properties due to the exchange of InAs between neighboring QDs. 9 Here we report leveling and rebuilding as an effective route for the creation of height controlled columnar ͑In,Ga͒As QDs.…”

Improved luminescence efficiency of InAs quantum dots grown on atomic terraced GaAs surface prepared with in‐situ chemical etching

“…It is well-known that the emission wavelength is depend on the QD size and smaller QDs emit shorter wavelength [8] due to the confinement size effect. The broader PL spectrum extending to the shorter wavelength observed with the non-processed QDs shown in Fig.…”