Molecular beam epitaxial growth and characterization of ZnSe on GaAs

Molecular beam epitaxy of CdSe epilayers and quantum wells on ZnTe substrate

“…Generally, as the BEP ratio is decreased at a constant substrate temperature, the Se surface coverage decreases and the surface reconstruction moves from the Se-rich (2 Â 1) to a combined region in which both the Se-rich (2 Â 1) and the Cdrich c(2 Â 2) reconstructions exist and then to a region of only Cd-terminated c(2 Â 2) surface [10]. As shown in Fig.…”

“…If the impinging molecular beam is Se-rich, no twofold reconstruction can be seen in the azimuths ½11 0, [1 0 0] and [0 1 0]. It is only observed in the azimuths [1 1 0], indicating that a (2 Â 1) reconstruction appears [10]. In the case of the growth at very low substrate temperature, the insufficient surface diffusion of the impinging particles resulted in threedimensional growth with facets.…”

“…In the case of the growth at very low substrate temperature, the insufficient surface diffusion of the impinging particles resulted in threedimensional growth with facets. They also explained the BEP ratio dependence of this effect; when the BEP ratio decreased, Zn atoms hindered the surface diffusion of Se [10,11].…”

“…The angle is relatively small compared with the RHEED patterns of refs. [10,11]. This means the angle between the substrate surface and facets is relatively small [12].…”

“…The surface of the growing layer is usually reconstructed. Several research groups have presented an MBE surface phase diagram for ZnSe for a wide range of carefully measured substrate temperatures and a wide range of BEP ratio, of Se to Zn [9][10][11]. The surface structure depends on the growth temperature and on the composition of the impinging molecular beam, expressed in terms of the BEP ratio, of Se to Zn.…”