Molecular Approach to Electrochemically Switchable Monolayer MoS₂ Transistors

Abstract

As the Moore's law is running to its physical limit, tomorrow's electronic system can be leveraged to a higher value by integrating "More than Moore" technologies into CMOS digital circuits. The hybrid heterostructure composed of two-dimensional (2D) semiconductors and molecular materials represents a powerful strategy to confer new properties to the former components, realize stimuli-responsive functional devices and enable diversification in "More than Moore" technologies. Here, we fabricated an ionic liquid-gated 2D MoS2 field-effect transistor (FET) with molecular functionalization. The suitably designed ferrocene substituted alkanethiol molecules do not only improve the FET performance, but they also show reversible electrochemical switching on MoS2 surface. Field-effect mobility of monolayer MoS2 reaches values as high as ~116 cm 2 V-1 s-1 with Ion/Ioff ratio exceeding 10 5. Molecules in their neutral or charged state impose distinct doping effect, efficiently tuning the electron density in monolayer MoS2. It is noteworthy that the joint doping effect from ionic liquid and switchable molecules results in the steep subthreshold swing of MoS2 FET in the backward sweep. These results demonstrate that our device architecture represents an unprecedented and powerful strategy to Received: ((will be filled in by the editorial staff)) Revised: ((will be filled in by the editorial staff))

High Electrical Anisotropic Multilayered Self‐Assembled Organic Films Based on Graphene Oxide and PEDOT:PSS

“…These barriers’ height can then be modulated by an external electric field, creating an FET structure. [ 35,36,89,90 ] Thus, while the V g bias induces an accumulation regime to modulate the I ds current, Schottky barriers between conductive phases can also be affected by V g , leading also to an I ds current modulation.…”

Towards Responsive Single‐Molecule Device

“…Considering that the high bias voltage weakens the stability of the specific single-molecule junction, gating can be a more promising method to change the charge transport ability without considering the molecular structure. [53] Since the charge transport across the single-molecule junction is closely related to the position of molecular levels relative to the Fermi level of the electrode, it can be tuned by back gating, [54] electrostatic gating [55] and electrochemical gating. [56] During the gating process, the energy levels of the molecule, or the Fermi levels of the electrode will be tuned.…”

Magnetic Field Controlled Interlayer Coupling in MoS2 Field Effect Transistors

“…[12c] Thus, the change of spin relaxation with a small magnetic field is worth exploring in order to enrich the spin-related research areas of 2D materials. FETs can be used as a good approach to achieve multi-field control with source-drain and gate voltage, [18] which provide an opportunity for us to have a deeper understanding of the magnetic field dependence of interlayer couplings in 2D materials and devices.…”