Molding compounds for high breakdown voltage applications on power IC semiconductors

Chen, A.S.; Shafi, A.H.H.; Busse, R.W.; Orr, R.; Lo, Roger

doi:10.1109/ectc.1997.606151

Cited by 18 publications

(3 citation statements)

References 5 publications

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“…[1][2][3][4] The reason for utilizing high filler contents are three folded; (1) to decrease the mechanical stresses on die; match the mechanical properties of silicon (i.e., thermal expansion stress reduction); (2) to have low enough permittivity and electrical conductivity to control the electric field above the active device with least ionic mobility; and (3) cost; semiconductor grade thermosets resins are expensive and cost reduction is achieved by using high amounts of inorganic fillers (up to 91% in weight), see Fig. 1.…”

Section: Introductionmentioning

confidence: 99%

Change in dielectric relaxation with the presence of water in highly filled composites

Tuncer

2017

J. Adv. Dielect.

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It is important to determine the dielectric characteristics of semiconductor encapsulation materials based on epoxy resins. We employed the dielectric spectroscopy technique to investigate the dielectric relaxation in the presence of water and how it changes the relaxation. It was observed that the dielectric relaxation of the material was significantly influenced by absorbed water, the local segmental motion (also known as Johari-Goldstein ( ) relaxation) was influenced most by the presence of the water, it was modified by the wet sample compared to dry one, and required high activation energy. The relaxation related to the glass transition was contributed by the cooperative motion (the -relaxation) of the epoxy resin system. The -relaxation was shifted to a low temperature in the wet sample compared to dry one. The relaxation was modeled with a clear Vogel-Fulcher-Tammann-Hesse (VFTH) behavior; the Vogel temperature of the wet sample was 8 K lower than the dry sample. The presence of water acts as a plasticizer for the molecular relaxation, and speed-up the cooperative process. The measured data were also used to estimate the electrical properties of the resin system by employing an effective-medium model together with a porous media continuum model by taking into account the physical properties of the system. It is already known that the influence of water in semiconductor packaging is important in sensitive applications. The presented measurements and the analysis method would be appreciated within the semiconductor packaging community to improve material selection and performance evaluation efforts.

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Section: Introductionmentioning

confidence: 99%

Change in dielectric relaxation with the presence of water in highly filled composites

Tuncer

2017

J. Adv. Dielect.

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“…More specifically, high-voltage lateral devices, like, e.g., double-diffused DMOS (LDMOS) transistors, are based on the Reduced Surface Field (RESURF) principle [4] to significantly improve the breakdown voltage. But the performance of this class of devices is sensitive to the optimum charge balance in the drift region, which is in general at the silicon surface, and thus it is strongly impacted by mobile charges accumulated in the overlying isolation and mold-compound passivation on top [5]. For this reason, additional metal and/or poly-silicon field-plates and floating-rings are required to stabilize the surface electric field [6,7], even if they might limit the maximum intrinsic performance of the device.…”

Section: Introductionmentioning

confidence: 99%

Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture

Cornigli

Reggiani

Gnudi

et al. 2018

Microelectronics Reliability

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“…These species may be formed even locally on the AlSi, AlSiCu surfaces due, for instance, to water penetration through the package and molding compound during accelerated reliability humidity test. 2,3 The Al film is normally covered with a thin ͑3-4 nm͒ native oxide-hydroxide layer which prevents the underlying metal from being further corroded in normal atmosphere. Traces of chemical species coming from molding compounds or introduced during the die fabrication can alter the oxide-hydroxide layer and favor further oxidation.…”

mentioning

confidence: 99%

Corrosion Inhibition of Al Metal in Microelectronic Devices Assembled in Plastic Packages

Scandurra

Currò

Frisina

et al. 2001

J. Electrochem. Soc.

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Aluminum-based metallizations are extensively used as electrical interconnections of integrated power microelectronic devices. It is well known that this metal exposed to moisture is highly sensitive to corrosion due to the chemical interaction of aluminum with water. In this paper we report a study of some Al passivation treatments against moisture corrosion. The proposed treatment can be done on the finished wafer without any damage of other device materials and satisfies the die attach and wire-bonding requirements. It consists of a simple chemical dipping into an organic bath containing a phosphating agent. The passivation behavior of the resulting surfaces has been checked by means of pressure cooker test both on the wafer and power metal oxide semiconductor devices assembled in plastic packages. The surfaces resulting in each process step have been analyzed by means of electron spectroscopy for chemical analysis. The passivated surface is formed of one to two monolayers of ortho-and polyphosphate phases directly grafted onto the alumina surface. The same growth process allows fluorine surface contamination reduction.

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Molding compounds for high breakdown voltage applications on power IC semiconductors

Cited by 18 publications

References 5 publications

Change in dielectric relaxation with the presence of water in highly filled composites

Change in dielectric relaxation with the presence of water in highly filled composites

Electrical characterization of epoxy-based molding compounds for next generation HV ICs in presence of moisture

Corrosion Inhibition of Al Metal in Microelectronic Devices Assembled in Plastic Packages

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