Modulation of Thermodynamic Properties of Doped GaAs Quantum Dot under the Influence of Noise

Abstract

In the present enquiry, an in‐depth analysis of internal energy, entropy, heat capacity, and Helmholtz free energy of GaAs quantum dot (QD) which contains Gaussian impurity as dopant and falls under the influence of applied Gaussian white noise (GWHN) is performed. GWHN takes additive and multiplicative routes for its entrance to the doped QD. In this study, highly delicate and complex interplay between temperature, presence/absence of GWHN, mode of incorporation of GWHN, and the particular physical parameters concerned is unveiled. The said interplay, in effect, designs the features of the thermal properties. The enquiry uncovers competitive behavior between thermal disorder and spatial disorder that also affects the said thermodynamic properties.