Modulation of Spin–Orbit Torque from SrRuO<sub>3</sub> by Epitaxial‐Strain‐Induced Octahedral Rotation

Zhou, Jing; Shu, Xinyu; Lin, Weinan; Shao, Ding Fu; Liu, Liang; Yang, Ping; Tsymbal, Evgeny Y.; Chen, Jingsheng

doi:10.1002/adma.202007114

Cited by 37 publications

(62 citation statements)

References 54 publications

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“…Owing to the strong spin-orbit coupling in SRO, we deduced that the different magnetic anisotropies for different oriented SRO were closely related to their distinct structural variants, especially the oxygen octahedral rotations (OOR). [26][27][28] Next, we combined first-principles calculations and high-resolution XRD measurements to elucidate this issue. While bulk SRO has an a-a-c+ OOR pattern (using Glazer notation), experimentally, an a-b+c-/a+b-c-domain-mixed OOR pattern is observed in SRO thin films grown on STO (001) substrates.…”

Section: Crystalline Orientation-dependent Freestanding Nanomembranesmentioning

confidence: 99%

“…These features suggest SCO as a promising sacrificial material for obtaining high-quality complex oxide nanomembranes. We focused on ferromagnetic metallic SrRuO 3 (SRO) as a freestanding material in this study (Figure 1a), the structurally correlated magnetic anisotropy [11,21,[25][26][27] and strong intrinsic spinorbit coupling [28] of which ensure scientific interest and the technical importance of exploring its nanomembranes.…”

Section: Introductionmentioning

confidence: 99%

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A Generic Sacrificial Layer for Wide‐Range Freestanding Oxides with Modulated Magnetic Anisotropy

Peng

Yang

et al. 2022

Adv Funct Materials

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Freestanding oxide nanomembranes have promising applications because of their novel electronic states and flexible crystalline structures. Several materials have been developed as sacrificial layers to exfoliate thin films from substrates via wet-etching. However, these materials face great challenges in terms of either complicated crystalline structures or corrosive solutions. Here, a new sacrificial material, SrCoO 2.5 , is presented, which can be coherently grown with wide-range strains and crystalline orientations and is also soluble in eco-friendly solutions such as acetic acid, vinegar, and even carbonated drinks. With SrCoO 2.5 as the sacrificial layer, high-quality freestanding ferromagnetic SrRuO 3 membranes are achieved from wide-range epitaxial strains and different crystalline orientations. By investigating the evolution of the magnetic properties of these samples, it is discovered that epitaxial strain causes a distinct modification of the magnetic anisotropy of (001) pc -oriented SrRuO 3 samples, while its influence on the (110) pc and (111) pc samples is insignificant. This study not only demonstrates the freestanding SrRuO 3 as a promising material for flexible spintronic devices, but also offers a great opportunity to engineer a wide range of strained and oriented complex oxides for novel freestanding electronics using this newly developed sacrificial material.

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Section: Crystalline Orientation-dependent Freestanding Nanomembranesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Generic Sacrificial Layer for Wide‐Range Freestanding Oxides with Modulated Magnetic Anisotropy

Peng

Yang

et al. 2022

Adv Funct Materials

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“…However, with h-BN breaking the inversion symmetry in the h-BN/ SRO bilayer, it is still possible that a net torque on SRO would be generated with the spin current source from SRO itself. [15][16][17] To exclude this possibility, we further prepared a sample with a 2 nm LaAlO 3 (LAO) layer inserted between h-BN and SRO, which also breaks the inversion symmetry of the structure. No current-induced magnetization switching loop is observed in this sample (Figure S4, Supporting Information), which indicates that the structure inversion asymmetry itself cannot give rise to a large enough SOT to switch the magnetization of SRO.…”

Section: Resultsmentioning

confidence: 99%

Rashba–Edelstein Effect in the h‐BN Van Der Waals Interface for Magnetization Switching

et al. 2022

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Van der Waals materials are attracting great attention in the field of spintronics due to their novel physical properties. For example, they are utilized as spin‐current generating materials in spin–orbit torque (SOT) devices, which offers an electrical way to control the magnetic state and is promising for future low‐power electronics. However, SOTs have mostly been demonstrated in vdW materials with strong spin–orbit coupling (SOC). Here, the observation of a current‐induced SOT in the h‐BN/SrRuO3 bilayer structure is reported, where the vdW material (h‐BN) is an insulator with negligible SOC. Importantly, this SOT is strong enough to induce the switching of the perpendicular magnetization in SrRuO3. First‐principles calculations suggest a giant Rashba effect at the interface between vdW material and SrRuO3 (110)pc thin film, which leads to the observed SOT based on a simplified tight‐binding model. Furthermore, it is demonstrated that the current‐induced magnetization switching can be modulated by the electric field. This study paves the way for exploring the current‐induced SOT and magnetization switching by integrating vdW materials with ferromagnets.

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“…Spin–orbit torque (SOT)-driven magnetic switching has attracted a lot of attention because of its significant application potential in nonvolatile, low-power, high-speed, and high-density magnetic random access memories and emerging spin logic devices. − The bilayer structure consisted of strong spin–orbit coupling (SOC) materials (e.g., topological insulator, two-dimensional electron gas, and Weyl semimetal and heavy metal) and ferromagnetic (FM) materials is widely accepted as the basic strategy of SOT switching. − However, the thickness of the FM layer in the bilayer structure is subjected to the non-local spin injection and spin coherence length, and the critical current density ( J c ) is enlarged with the increasing thickness of the FM layer, that is, the interfacial nature of the SOT effect. This peculiarity results in incompatibility between low J c and a thick FM layer for high thermal stability, which hinders the application of SOT-based devices in low-power and high-density memory and computation systems. − …”

Section: Introductionmentioning

confidence: 99%

Field-Free Magnetization Switching Induced by Bulk Spin–Orbit Torque in a (111)-Oriented CoPt Single Layer with In-Plane Remanent Magnetization

Zhang

Shen

et al. 2022

ACS Appl. Electron. Mater.

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Spin–orbit torque (SOT)-induced perpendicular magnetization switching is one of the key solutions for the next generation of magnetic memory and spin logic applications. Recently, the bulk SOT effect in a single magnetic layer with a vertical composition gradient has attracted a lot of attention because it can break through the interfacial nature of the SOT effect in a traditional bilayer structure. However, the dependency of the external in-plane magnetic field or the additional pinning layer for deterministic switching hinders the further application of this technology. Here, for the first time, we implement field-free magnetization switching induced by bulk SOT in a single (111)-oriented CoPt magnetic layer with in-plane remanent magnetization. The initialized longitudinal in-plane remanent magnetization can substitute the external magnetic field to break the inversion symmetry and realize continuous field-free perpendicular magnetization switching. Furthermore, the in-plane remanent magnetization can be manipulated by the SOT effective field induced by lateral current pulses, leading to a tunable switching chirality. A multi-domain micromagnetic model is established to describe in depth the experimental observations and clarify the relationship between switching amplitude and easy magnetization cone angle. Our work provides an alternative solution to realize field-free perpendicular magnetization switching in a single magnetic layer, which can promote the development of emerging high-density and low-power SOT-based devices.

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Modulation of Spin–Orbit Torque from SrRuO₃ by Epitaxial‐Strain‐Induced Octahedral Rotation

Cited by 37 publications

References 54 publications

A Generic Sacrificial Layer for Wide‐Range Freestanding Oxides with Modulated Magnetic Anisotropy

A Generic Sacrificial Layer for Wide‐Range Freestanding Oxides with Modulated Magnetic Anisotropy

Rashba–Edelstein Effect in the h‐BN Van Der Waals Interface for Magnetization Switching

Field-Free Magnetization Switching Induced by Bulk Spin–Orbit Torque in a (111)-Oriented CoPt Single Layer with In-Plane Remanent Magnetization

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Modulation of Spin–Orbit Torque from SrRuO3 by Epitaxial‐Strain‐Induced Octahedral Rotation

Cited by 37 publications

References 54 publications

A Generic Sacrificial Layer for Wide‐Range Freestanding Oxides with Modulated Magnetic Anisotropy

A Generic Sacrificial Layer for Wide‐Range Freestanding Oxides with Modulated Magnetic Anisotropy

Rashba–Edelstein Effect in the h‐BN Van Der Waals Interface for Magnetization Switching

Field-Free Magnetization Switching Induced by Bulk Spin–Orbit Torque in a (111)-Oriented CoPt Single Layer with In-Plane Remanent Magnetization

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Modulation of Spin–Orbit Torque from SrRuO₃ by Epitaxial‐Strain‐Induced Octahedral Rotation