Modulation of Minority Carriers in the C-V Characteristics of MIS Tunneling Diode by Surrounding MOS Capacitor

Abstract

In this work, the capacitance-voltage (C-V) and current-voltage (I-V) measurements on the metal-insulator-semiconductor tunnel diode (MIS TD) with or without surrounding metal-oxidesemiconductor (MOS) capacitor were presented. The different C-V and I-V characteristics of the MIS TD observed between the two devices suggests that the minority carrier concentration in substrate surface of the MIS TD could be affected by the gate bias of the surrounding MOS capacitor, which modulates the effective Schottky barrier height and reverse-biased current of the MIS TD.