Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

Heo, Seungyang; Oh, Chadol; Eom, Man Jin; Kim, Jun Sung; Ryu, Jungho; Son, Junwoo; Jang, Hyun M.

doi:10.1038/srep22228

Cited by 27 publications

(29 citation statements)

References 42 publications

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“…28) is Poisson’s ratio, a 0 = 3.806 Å is the unstrained lattice constant, and a NNO is the in-plane lattice constant of NNO (3.868 Å for NNO/LSAT (same as LSAT) or 3.905 Å for NNO/STO (same as STO)). Based on this relationship, estimated c NNO under tensile strain were 3.741 Å on NNO/LSAT and 3.701 Å on NNO/STO.…”

Section: Resultsmentioning

confidence: 99%

Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films

Heo

Son

et al. 2017

Sci Rep

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We report direct evidence that oxygen vacancies affect the structural and electrical parameters in tensile-strained NdNiO3−δ epitaxial thin films by elaborately adjusting the amount of oxygen deficiency (δ) with changing growth temperature T D. The modulation in tensile strain and T D tended to increase oxygen deficiency (δ) in NdNiO3−δ thin films; this process relieves tensile strain of the thin film by oxygen vacancy incorporation. The oxygen deficiency is directly correlated with unit-cell volume and the metal-insulator transition temperature (T MI), i.e., resulting in the increase of both unit-cell volume and metal-insulator transition temperature as oxygen vacancies are incorporated. Our study suggests that the intrinsic defect sensitively influences both structural and electronic properties, and provides useful knobs for tailoring correlation-induced properties in complex oxides.

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Section: Resultsmentioning

confidence: 99%

Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films

Heo

Son

et al. 2017

Sci Rep

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“…Here we will use the term electroactive to collectively describe the continuous and discontinuous responses, thus deviating from the common practice of describing electrically driven strain from ferroelectric substrates purely as piezoelectric. Although electrically driven strain has been widely employed in multiferroic heterostructures for data-storage applications [14][15][16] based on the electrical control of magnetism [17][18][19] , it could be used more generally to control the various physical and chemical properties and phenomena that arise in transition metal perovskite oxides, as demonstrated for electrical resistivity 20 , metal-insulator transitions 21 and photoconductivity 22 .…”

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confidence: 99%

Large magnetoelectric coupling in multiferroic oxide heterostructures assembled via epitaxial lift-off

et al. 2020

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Epitaxial films may be released from growth substrates and transferred to structurally and chemically incompatible substrates, but epitaxial films of transition metal perovskite oxides have not been transferred to electroactive substrates for voltage control of their myriad functional properties. Here we demonstrate good strain transmission at the incoherent interface between a strain-released film of epitaxially grown ferromagnetic La 0.7 Sr 0.3 MnO 3 and an electroactive substrate of ferroelectric 0.68Pb(Mg 1/3 Nb 2/3)O 3-0.32PbTiO 3 in a different crystallographic orientation. Our strain-mediated magnetoelectric coupling compares well with respect to epitaxial heterostructures, where the epitaxy responsible for strong coupling can degrade film magnetization via strain and dislocations. Moreover, the electrical switching of magnetic anisotropy is repeatable and non-volatile. High-resolution magnetic vector maps reveal that micromagnetic behaviour is governed by electrically controlled strain and cracks in the film. Our demonstration should inspire others to control the physical/ chemical properties in strain-released epitaxial oxide films by using electroactive substrates to impart strain via non-epitaxial interfaces.

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“…Nevertheless, by surprise, an exchange bias was observed in LSMO/LNO [16,17,20], and it is yet unclear what is the underlying mechanism and if it offers sufficient tunability of the unidirectional magnetic anisotropy. By contrast, the NNO thin films do exhibit an antiferromagnetic ground state which may be optimized against strain, dimensionality, and other intrinsic and extrinsic constraints [26][27][28][29][30][31][32][33][34][35].…”

Section: Introductionmentioning

confidence: 99%

Charge-transfer-induced interfacial ferromagnetism in La0.7Sr0.3MnO3/NdNiO3

Chen

Luo

Chen

et al. 2020

Phys. Rev. Materials

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Charge-transfer-induced interfacial ferromagnetism and its impact on the exchange bias effect in La 0.7 Sr 0.3 MnO 3 /NdNiO 3 correlated oxide heterostructures were investigated by soft x-ray absorption and x-ray magnetic circular dichroism spectra in a temperature range from 10 to 300 K. Besides the antiferromagnetic Ni 3+ cations which are naturally part of the NdNiO 3 layer, Ni 2+ ions are formed at the interface due to a charge-transfer mechanism involving the Mn element of the adjacent layer. They exhibit a ferromagnetic behavior due to the exchange coupling to the Mn 4+ ions in the La 0.7 Sr 0.3 MnO 3 layer. This can be seen as detrimental to the strength of the unidirectional anisotropy since a significant part of the interface does not contribute to the pinning of the ferromagnetic layer. By analyzing the line-shape changes of the x-ray absorption at the Ni L 2,3 edges, the metal-insulator transition of the NdNiO 3 layer is resolved in an element-specific manner. This phase transition is initiated at about 120 K, way above the paramagnetic to antiferromagnetic transition of the NdNiO 3 layer which measured to be 50 K. Exchange bias and enhanced coercive fields were observed after field cooling the sample through the Néel temperature of the NdNiO 3 layer. Different from La 0.7 Sr 0.3 MnO 3 /LaNiO 3 , the exchange bias observed in La 0.7 Sr 0.3 MnO 3 /NdNiO 3 is due to the antiferromagnetism of NdNiO 3 and the frustration at the interface. These results suggest that reducing the interfacial orbital hybridization may be used as a tunable parameter for the strength of the exchange bias effect in all-oxide heterostructures which exhibit a charge-transfer mechanism.

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Modulation of metal-insulator transitions by field-controlled strain in NdNiO3/SrTiO3/PMN-PT (001) heterostructures

Cited by 27 publications

References 42 publications

Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films

Influence of tensile-strain-induced oxygen deficiency on metal-insulator transitions in NdNiO3−δ epitaxial thin films

Large magnetoelectric coupling in multiferroic oxide heterostructures assembled via epitaxial lift-off

Charge-transfer-induced interfacial ferromagnetism in La0.7Sr0.3MnO3/NdNiO3

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