Modulation of magnon spin transport in a magnetic gate transistor

Abstract

We demonstrate a modulation of up to 18% in the magnon spin transport in a magnetic insulator (Y3Fe5O12, YIG) using a common ferromagnetic metal (permalloy, Py) as a magnetic control gate. A Py electrode, placed between two Pt injector and detector electrodes, acts as a magnetic gate in our prototypical magnon transistor device. By manipulating the magnetization direction of Py with respect to that of YIG, the transmission of magnons through the Py|YIG interface can be controlled, resulting in a modulation of the non-equilibrium magnon density in the YIG channel between the Pt injector and detector electrodes. This study opens up the possibility of using the magnetic gating effect for magnon-based spin logic applications.

All‐Electrical Magnon Transport Experiments in Magnetically Ordered Insulators

“…In this regard, all-electrical magnon transport experiments already showed that they are beneficial to qualitatively and quantitatively investigate charge-to-spin current conversion processes in magnetically ordered conductors. [69,74,95,101,104] As a next step, we have to describe the transfer of spin momentum at the interface between the NM and the MOI. A detailed theoretical description is presented in the study by Bender et al [105] including heat transport across the NM/MOI interface.…”

Boosting spintronics with superconductivity

“…58 The interaction between triplet Cooper pairs and magnons constitutes a fascinating research direction. Magnon-based devices have been explored as interconnecting elements in spin logic architectures, and achieving magnon modulation via the magnetic field 113 or electrical gating [114][115][116] is important for implementing magnonic logic functionalities. A recent study demonstrates that spin wave transmission within a Py layer between injector and detector antennas is modulated up to 40% by opening and closing a spin dissipation channel consisting of triplet correlations in a nearby Nb layer, as shown in Fig.…”

Measurement of the Spin Absorption Anisotropy in Lateral Spin Valves

“…Note that, as proposed by K. S. Das et al [17], our device can be also used as a spin transistor, whereby the absorber constitutes a magnetic gate allowing a significant modulation of the spin signal. The 40% variations observed here reveal indeed relatively large with respect to the state of the art [18,19].…”