2013
DOI: 10.1016/j.tsf.2013.06.083
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Modulation of magnetic anisotropy in Fe/Si(111) thin films through interface property

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Cited by 5 publications
(1 citation statement)
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“…[14] Due to the importance of Fe/Si films in magnetoelectronics and the integration of magnetic devices in silicon technology, [16] the magnetic anisotropy of Fe/Si film has been largely reported. [3,[7][8][9][10][17][18][19][20] In particular, the manipulation of spin-reorientation transition (SRT) processes from out-ofplane to in-plane in Fe/Si film has already been fully understood and studied. For example, for Fe films deposited on flat Si (111) substrate, due to the competition between surface magnetic anisotropy and shape anisotropy, an SRT process from out-of-plane to in-plane with a critical thickness of about 7 monolayer (ML) was observed.…”
Section: Introductionmentioning
confidence: 99%
“…[14] Due to the importance of Fe/Si films in magnetoelectronics and the integration of magnetic devices in silicon technology, [16] the magnetic anisotropy of Fe/Si film has been largely reported. [3,[7][8][9][10][17][18][19][20] In particular, the manipulation of spin-reorientation transition (SRT) processes from out-ofplane to in-plane in Fe/Si film has already been fully understood and studied. For example, for Fe films deposited on flat Si (111) substrate, due to the competition between surface magnetic anisotropy and shape anisotropy, an SRT process from out-of-plane to in-plane with a critical thickness of about 7 monolayer (ML) was observed.…”
Section: Introductionmentioning
confidence: 99%