Modulation of crystal structure and electrical properties of Hf0.6Zr0.4O2 thin films by Al-doping

Lee, Seungwon; Kim, In Soo; Choi, Junwoo; Hyun, Cheol-Min; Ahn, Ji‐Hoon

doi:10.1016/j.matlet.2019.05.112

Cited by 20 publications

(3 citation statements)

References 12 publications

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“…e most straightforward approach is to train the network by masking part of the training images for data expansion to weaken the weights of certain subregions [25]. It turns out that facial features extracted by deep learning models are robust to occlusion [26], and the occlusion of 10% of the input image area has little impact on the performance of face recognition.…”

Section: Neural Network-based Detection Settingsmentioning

confidence: 99%

Cloud Data Access Prevention Method in Face Recognition Technology Based on Computer Vision

Qian

Wang

2022

Security and Communication Networks

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With the development of cloud technology and the innovation of information network technology, people’s dependence on the network has gradually increased, and there are some loopholes in cloud data access. The traditional account permission model can no longer meet the conditions of cloud data access alone. If the visitor temporarily leaves the computer or goes out in an emergency, the data are likely to be leaked. Based on the importance and concern of this issue, some scholars have proposed an authentication system combined with biometric face recognition, but the traditional face recognition system has certain security risks. Such as using face pictures and videos to deceive the system, tampering with face templates, etc. Based on this, this paper proposes an encrypted face authentication system based on CNN neural network. Through the authentication of face data, the content transmission of each part is carried out in the form of ciphertext to ensure the security of information. The experimental results in this paper show that the authentication accuracy rate of DeepID is 94% when it is not encrypted, and the authentication accuracy rate decreases slightly after encryption, which is 93.3%. It is similar in other cases. When the network structure and data set remain unchanged, encryption reduces the authentication accuracy rate by 0.3%–2.4%. It can be seen that the scheme proposed in this chapter improves the system security at the cost of a smaller accuracy rate.

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Section: Neural Network-based Detection Settingsmentioning

confidence: 99%

Cloud Data Access Prevention Method in Face Recognition Technology Based on Computer Vision

Qian

Wang

2022

Security and Communication Networks

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“…Noticeably, in the dielectric composite field, very little research has focused on the crystal structure of inorganic fillers. Nevertheless, the different crystal structures can substantially lead to differences in lattice arrangement, atomic distance, and cell symmetry, thus affecting their electrical properties. − For example, the cubic HfO 2 (c-HfO 2 ) and monoclinic HfO 2 (m-HfO 2 ), as two common crystal structures of HfO 2 , were demonstrated to have different dielectric constants in the same electric field. , Therefore, it is crucial to further clarify the influence of crystal structures on the dielectric properties of nanocomposites and summarize a relatively more ideal crystal structure of HfO 2 for dielectric materials.…”

Section: Introductionmentioning

confidence: 99%

Constructing Deep Traps to Achieve Excellent Dielectric Properties in Crystal-Based HfO₂/PEI Nanocomposite Films with Ultralow Filler Loadings

Lin,

Jiang,

Zhou

et al. 2024

ACS Appl. Mater. Interfaces

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Mixing fillers featured with wide band gaps in polymers can effectively meet the requirement of higher energy storage densities. However, the fundamental relationship between the crystal structures of fillers and the dielectric properties of the corresponding nanocomposites is still unclear. Accordingly, we introduced ultralow contents of the synthesized cubic Hafnium dioxide (c-HfO 2 ) or monoclinic Hafnium dioxide (m-HfO 2 ) as deep traps into poly(ether imide) (PEI) to explore their effects on dielectric properties and the charge-blocking mechanism. m-HfO 2 / PEI showed better charge trapping due to the higher electron affinity and deeper trap energy. At room temperature, the 0.4 vol % m-HfO 2 /PEI maintains an ultralow dielectric loss of 0.008 while obtaining a dielectric constant twice that of pure PEI at 1 kHz, simultaneously outperforming in terms of leakage current density, breakdown strength (452 kV mm −1 ), discharge energy density (U d , 5.03 J cm −3 ), charge−discharge efficiency (η, 92%), and dielectric thermal stability. At 125 °C, it exhibits a considerable U d of 2.48 J cm −3 and a high η of 85% at 300 kV mm −1 , surpassing the properties of pure PEI. This promising work opens up a new path for studying HfO 2 -derived dielectrics with unique crystal structures.

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“…ZrO 2 has a relatively high k-value, and it is reported that the cubic or tetragonal crystalline form of stable ZrO 2 can increase the value of dielectric constant k. The important reason for the increase in dielectric constant is the change of crystal structure inside the film [16][17][18]. To the best of our knowledge, the tetragonal phase has the highest k-value among the different crystalline phases of Hf-and Zr-based oxides, and the most effective way to become a tetragonal phase is to add stable dopants such as Al, Y, or Si to the Hf-and Zr-based oxides [19][20][21][22]. Several authors have reported experimental and theoretical evidence of high k-values for a variety of crystalline forms of ZrO 2 ; they add elements such as Y, Al, Ge, and La by doping the oxides or during the deposition of thin films [23].…”

Section: Introductionmentioning

confidence: 99%

Effect of Annealing Temperature on the Structural, Optical, and Electrical Properties of Al-Doped ZrO2 Gate Dielectric Films Treated by the Sol–Gel Method

Cai

Tuokedaerhan

et al. 2022

Coatings

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In this article, we report the preparation of Al-doped ZrO2 (AZO) thin films by the sol–gel method. The electrical properties, microstructure, and optical properties of AZO high-k gate dielectric films at different annealing temperatures were systematically investigated. XRD results confirm that the AZO film was amorphous at a temperature of 600 °C, and Al doping raises the crystallization temperature of ZrO2. AFM and FESEM show a smooth surface of AZO film without cracks. As the annealing temperature increased from 600 to 900 °C, all of the films had similar RMS roughness under 1 nm, the film thickness decreased accordingly, the bandgap value increased from 5.77 to 5.82 eV, the valence band shift (ΔEv) increased, and the conduction band shift (ΔEc) decreased. XPS analysis showed that silicates were formed at the AZO/Si interfacial layer. Electrical performance tests showed that high-temperature annealing can effectively improve the electrical properties, as shown by the increase in dielectric constant (k) and the decrease in flat-band voltage (ΔVfb). However, an increase in leakage current density with increasing annealing temperature was observed due to the decrease in ΔEc and the appearance of crystallization caused by the increase in annealing temperature.

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Modulation of crystal structure and electrical properties of Hf0.6Zr0.4O2 thin films by Al-doping

Cited by 20 publications

References 12 publications

Cloud Data Access Prevention Method in Face Recognition Technology Based on Computer Vision

Cloud Data Access Prevention Method in Face Recognition Technology Based on Computer Vision

Constructing Deep Traps to Achieve Excellent Dielectric Properties in Crystal-Based HfO₂/PEI Nanocomposite Films with Ultralow Filler Loadings

Effect of Annealing Temperature on the Structural, Optical, and Electrical Properties of Al-Doped ZrO2 Gate Dielectric Films Treated by the Sol–Gel Method

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Modulation of crystal structure and electrical properties of Hf0.6Zr0.4O2 thin films by Al-doping

Cited by 20 publications

References 12 publications

Cloud Data Access Prevention Method in Face Recognition Technology Based on Computer Vision

Cloud Data Access Prevention Method in Face Recognition Technology Based on Computer Vision

Constructing Deep Traps to Achieve Excellent Dielectric Properties in Crystal-Based HfO2/PEI Nanocomposite Films with Ultralow Filler Loadings

Effect of Annealing Temperature on the Structural, Optical, and Electrical Properties of Al-Doped ZrO2 Gate Dielectric Films Treated by the Sol–Gel Method

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Constructing Deep Traps to Achieve Excellent Dielectric Properties in Crystal-Based HfO₂/PEI Nanocomposite Films with Ultralow Filler Loadings