Abstract:The cation ratio in Cu-poor and Zn-rich CZTSSe absorbers
is key
to decide the photovoltaic performance of CZTSSe solar cells, while its toleration
and the influence mechanism is still not clear. In this work, for
single-layer-structured CZTSSe absorbers spin-coated from metal chloride
precursors with constant Cu and Zn values, the Zn/Sn ratio is regulated
in the range of 0.8∼1.6. It is found that the Zn/Sn ratio has
great influence on the morphology and electrical properties of the
CZTSSe absorbers and thus th… Show more
“…J L is related to depletion region width ( W d ), I CdS , and the bandgap ( E g ) of the absorber. From literatures about CZTSSe and CIGS solar cells published previously, [ 29–34 ] we found FF and V oc and PCE increase with increasing W d , as shown in Figure S1, Supporting Information (in Section S1, Supporting Information). So, widening W d is also an effective route to enhance V oc and FF.…”
It is known that high carrier recombination at p‐n junction interface and low carrier separation ability (CSA) are two main problems resulting in low power conversion efficiency (PCE) of Cu2ZnSn(S,Se)4(CZTSSe) solar cell. To resolve these problems, one CZTSSe solar cell are prepared through substituting B‐doped CdS for CdS in solar cell with conventional structure of Ag/ITO/ZnO/CdS/CZTSSe/Mo/SLG and annealing B‐doped CdS/CZTSSe/Mo/SLG prior to deposition of ZnO, ITO and Ag electrode. By optimizing B doping content in the CdS and annealing temperature and time of the B‐doped CdS/CZTSSe, lattice mismatch between CdS and CZTSSe is decreased and width of depletion region is increased, leading to reduce in interfacial recombination, enhancement in carrier separation ability and intensity of incident light passing through the B‐doped CdS, and so increase in PCE from 7.89% of CZTSSe solar cell using CdS as buffer layer to 10.62%. A mechanism of the increment of the PCE induced by the B‐doping and annealing is suggested. This work proposes a method of increasing PCE of CZTSSe solar cell and advances a deeper understanding of the mechanisms behind various parameters in CZTSSe solar cells through theoretical analysis and calculations.This article is protected by copyright. All rights reserved.
“…J L is related to depletion region width ( W d ), I CdS , and the bandgap ( E g ) of the absorber. From literatures about CZTSSe and CIGS solar cells published previously, [ 29–34 ] we found FF and V oc and PCE increase with increasing W d , as shown in Figure S1, Supporting Information (in Section S1, Supporting Information). So, widening W d is also an effective route to enhance V oc and FF.…”
It is known that high carrier recombination at p‐n junction interface and low carrier separation ability (CSA) are two main problems resulting in low power conversion efficiency (PCE) of Cu2ZnSn(S,Se)4(CZTSSe) solar cell. To resolve these problems, one CZTSSe solar cell are prepared through substituting B‐doped CdS for CdS in solar cell with conventional structure of Ag/ITO/ZnO/CdS/CZTSSe/Mo/SLG and annealing B‐doped CdS/CZTSSe/Mo/SLG prior to deposition of ZnO, ITO and Ag electrode. By optimizing B doping content in the CdS and annealing temperature and time of the B‐doped CdS/CZTSSe, lattice mismatch between CdS and CZTSSe is decreased and width of depletion region is increased, leading to reduce in interfacial recombination, enhancement in carrier separation ability and intensity of incident light passing through the B‐doped CdS, and so increase in PCE from 7.89% of CZTSSe solar cell using CdS as buffer layer to 10.62%. A mechanism of the increment of the PCE induced by the B‐doping and annealing is suggested. This work proposes a method of increasing PCE of CZTSSe solar cell and advances a deeper understanding of the mechanisms behind various parameters in CZTSSe solar cells through theoretical analysis and calculations.This article is protected by copyright. All rights reserved.
“…The Cu 2 ZnSn(S,Se) 4 solar cell has a number of advantages including nontoxic elements, long-term stability, lightweight, and high flexibility. 47,48 The photograph and fundamental properties of the Cu 2 ZnSn(S,Se) 4 solar cell are shown in Fig. S15 and S16 (ESI †).…”
Flexible pressure sensors, as an important class of intelligent sensing devices, are widely explored in body-motion and medical health monitoring, artificial intelligence and human-machine interaction. As a new layered nanomaterial,...
“…Expect for Na, the prolonged annealing time makes less Cu and more Zn focus near the surface of films, which is profit to acquire the high-efficiency devices. [35][36][37] As the air-annealing time prolongs, SnO 2 phases can appear in the as-prepared film. In order to avoid the direct phase transformation to the SnSe 2 phase, [29] XRD patterns of the CZTSSe absorber layer with different air-annealing time need to be measured.…”
Section: Resultsmentioning
confidence: 99%
“…Expect for Na, the prolonged annealing time makes less Cu and more Zn focus near the surface of films, which is profit to acquire the high‐efficiency devices. [ 35–37 ]…”
Excellent morphology and low harmful defect states of the absorber layer are essential to fabricate the high‐performance Cu2ZnSn(S, Se)4 (CZTSSe) devices. Herein, the annealing time of precursor films in air is proved to have much impact on the quality of absorber layer and the performance of devices. Appropriately extending the air‐annealing time can promote the diffusion of Na into films and O absorption on the surface of precursor films, boost the growth of crystal grain, and lessen the harmful defect density and band‐tailing states of absorber. The appropriate extension of air‐annealing time also regulates the electrical properties of the absorber. The efficiency of CZTSSe devices is enhanced from 6.92% (1 min) to 10.1% (7 min), with the decreased VOC, Def. These enhanced properties demonstrate that regulating the air‐annealing time of precursor films can be a simple and direct way for improving the performance of CZTSSe devices.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.