Modulation Characteristics of High-Speed Transistor Lasers

Abstract

The spontaneous emission recombination lifetime of carriers in the active region of transistor lasers (TLs) is significantly reduced due to the accelerated carrier transport in the base region under the collector bias. Thus, it has the potential for use as a high-speed optical fiber communication light source. The unique three-electrode structure of TL notably enriches the modulation methods of the light source. As an important parameter to measure the data transfer rate, the modulation bandwidth of TL has been studied extensively. This paper briefly analyzes the inherent characteristics and advantages of TL and then discusses the progress in the research on TL modulation characteristics. Currently, the common methods to increase the modulation rate include optimizing the device structure, intracavity photon-assisted tunneling, and adding external auxiliary circuits. Through these techniques, single quantum well GaAs- based TL can achieve error-free transmission of 22 Gb/s, and simulation data show that for InP- based TL, this can reach 40 Gb/s. Finally, the challenges faced by TL in the area of optical fiber communication are elucidated.

Influence of Franz Keldysh Effect on the Modulation depth and Distortion Characteristics of Transistor Laser

“…Optical source such as Transistor Laser can be used in transmitter as it provides larger modulation bandwidth [14,15]. The depth of modulation of TL is evaluated with collector to base voltage effect under various bias currents at RF signal frequencies of 1.8 GHz and 2.4 GHz respectively.…”

“…The TL device meets out the urging need of high-speed transmission systems in applications such as high performance computers and data centres by opening up the possibility of TL based all-optical logic processor and on-chip optical interconnects [14,15]. Moreover, TL is a better alternative to laser diode as it provides a larger modulation depth [16][17][18].…”