Modulating the threshold voltage of oxide nanowire field-effect transistors by a Ga+ ion beam

Li, Wenqing; Liao, Lei; Xiao, Xiangheng; Zhao, Xinyue; Dai, Zhigao; Guo, Shishang; Wu, Wei; Shi, Ying; Xu, Jinxia; Ren, Feng; Jiang, Changzhong

doi:10.1007/s12274-014-0529-5

Cited by 20 publications

(13 citation statements)

References 30 publications

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“…5,6 Moreover, the responsivity and the dark current of ZnO-based UV photodetectors are usually affected by H 2 O/O 2 adsorption on the ZnO surface. 7,8 To eliminate the inuence of the surface state and improve the performance of ZnO UV PDs, various methods have been investigated, such as surface passivation by highly intensive UV irradiation, 9 annealing, 10 and treatment. 8 Considerable progress has been seen regarding the elimination of the inuence of the surface state on the performance of ZnO-based UV PDs; however, most of the above-mentioned methods are not highly effective, and device performance remains lower than expected.…”

Section: Introductionmentioning

confidence: 99%

Oxygen plasma assisted enhanced photoresponse of ZnO nanowires fabricated by catalyst-free chemical vapor deposition

et al. 2018

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In this paper, in order to enhance the performance of fabricated ZnO nanowires (NWs) by chemical vapor deposition (CVD) without catalysts, oxygen plasma was used to modify the ZnO nanowire-based interdigital microelectrode array photodetectors (IDA-PDs) at different times. The surface states of ZnO NWs with O 2 plasma treatment were characterized via X-ray photoelectron spectroscopy (XPS). Results showed that the photocurrent of the IDA-PDs continuously increased from 4 to 28 mA as the plasma-treatment time increased from 0 to 10 minutes. The response mechanism of O 2 plasma treated ZnO NWs was investigated by illustrating the intensity of the surface oxygen atoms of ZnO NWs.This sample handling method can be beneficial in improving the performance of semiconductor photodetectors.

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Section: Introductionmentioning

confidence: 99%

Oxygen plasma assisted enhanced photoresponse of ZnO nanowires fabricated by catalyst-free chemical vapor deposition

et al. 2018

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“…The ion transmembrane transport process is mainly controlled by an ion channel (a protein, about a few nm in length and a radius of about 0.2 nm) [23][24][25], when ions are transported through the ion channel, the ions are confined to the nm-scale pores. Many studies have shown that when ions are confined within the nm channel, many magical phenomena occur [26][27][28][29][30][31][32][33][34][35].…”

Section: Ion Transmembrane Transport-in a Space Scale Of Nm And A Time Scale Of Psmentioning

confidence: 99%

A new viewpoint and model of neural signal generation and transmission: Signal transmission on unmyelinated neurons

Xiang

Tang

Chang³

et al. 2020

Nano Res.

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We establish a preliminary model of neural signal generation and transmission based on our previous research, and use this model to study signal transmission on unmyelinated nerves. In our model, the characteristics of neural signals are studied both on a long-time and a short time scale. On the long-time scale, the model is consistent with the circuit model. On the short time scale, the neural system exhibits a THz and infrared electromagnetic oscillation but the energy envelope curve of the rapidly oscillating signal varies slowly. In addition, the numerical method is used to solve the equations of neural signal generation and transmission, and the effects of the temperature on signal transmission are studied. It is found that overly high and overly low temperatures are not conducive to the transmission of neural signals.

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“…In our previous work, we successfully utilized an ion beam to mill the surface of nanowires and modulate the performance of the fabricated FETs. Figure shows the schematic diagram and transfer curves of a Ga + ‐irradiated nanowire FET . After irradiation, the threshold voltage ( V th ) is shifted from ≈10 to ≈1 V. In addition, the carrier mobility of the In 2 O 3 nanowire FETs was increased, but the subthreshold slope barely changed.…”

Section: Enhanced Electronic Device Performance By Ion Beammentioning

confidence: 99%

Section: Enhanced Electronic Device Performance By Ion Beammentioning

confidence: 99%

A Review of Recent Applications of Ion Beam Techniques on Nanomaterial Surface Modification: Design of Nanostructures and Energy Harvesting

Zhan

Song

et al. 2019

Small

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properties because of their special struc ture. When the materials reach a nano meter size, the electrical, optical, magnetic, and other properties of the materials will be altered greatly because of the small size effect, quantum size effect, sur face and boundary effects, and Coulomb blockade effect. [1] Currently, nanomaterials have been widely applied in many fields, including computers, catalysis, sensors, energy, and environmental protection. [2][3][4][5][6][7][8][9][10][11] As the demand increases, people aspire to fabricate nanomaterials with greater prop erties. Many methods have been used to improve the properties of nanomaterials, including doping, surface reconstruc tion, semiconductor composite, and metal nanoparticle embedding. [12][13][14][15][16][17][18][19][20] These days, ion beam techniques, including ion implantation, irradiation, and focused ion beam (FIB), have been extensively used to modulate the properties of nanomaterials. Moreover, ion beam techniques are regarded as a promising technique for doping and surface modification. Compared with doping during growth and diffusion, ion implantation is more controllable and reproducible. In addition, ion implantation is also an effective method for embedding nanoclusters in body materials. Moreover, ion irradiation is an effective method to modulate the morphology and surface structure of the mate rials. Therefore, via using this technique, various properties of nanomaterials can be tailored. FIB is typically used for the in situ study of ionirradiated materials. Figure 1 shows the applications of ion beam techniques for nanomaterial surface modification.Ion implantation, as an ion beam technique, has been extensively applied to the modulation of nanomaterial sur faces. Moreover, the technique has also been extensively used in the field of microelectronics. Ion implantation has replaced diffusion as a doping method to introduce dopants into the semiconductors. As an industrial technique, it exhibits high controllability and accuracy. In contrast to other doping strat egies, almost all elements can be introduced into the target materials by ion implantation and it does not introduce other impurity elements. In addition, ion implantation is not restricted by the solid solubility of elements in the mate rials. Ion implantation can be described as a collision process Nanomaterials have gained plenty of research interest because of their excellent performance, which is derived from their small size and special structure. In practical applications, to acquire nanomaterials with high performance, many methods have been used to modulate the structure and components of materials. To date, ion beam techniques have extensively been applied for modulating the performance of various nanomaterials. Energetic ion beams can modulate the surface morphology and chemical components of nanomaterials. In addition, ion beam techniques have also been used to fabricate nanomaterials, including 2D materials, nanoparticles, and nanowires. Compared with conventional metho...

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Modulating the threshold voltage of oxide nanowire field-effect transistors by a Ga+ ion beam

Cited by 20 publications

References 30 publications

Oxygen plasma assisted enhanced photoresponse of ZnO nanowires fabricated by catalyst-free chemical vapor deposition

Oxygen plasma assisted enhanced photoresponse of ZnO nanowires fabricated by catalyst-free chemical vapor deposition

A new viewpoint and model of neural signal generation and transmission: Signal transmission on unmyelinated neurons

A Review of Recent Applications of Ion Beam Techniques on Nanomaterial Surface Modification: Design of Nanostructures and Energy Harvesting

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