Modulating the Quantum Efficiency of Sb₂S₃‐Based Photodiodes Based on Conventional and Inverted Structures

Abstract

Antimony sulfide (Sb 2 S 3 ), a binary chalcogenide, has recently emerged as a promising candidate for photovoltaics due to its high absorption coefficient, facile processing, and lower toxicity. However, high-performance photodiodes based on Sb 2 S 3 have not been achieved and systematically investigated. Herein, Sb 2 S 3 -based photodiodes based on conventional and inverted structures are developed, and their charge transport and spectral dependent quantum efficiency of these two types of devices are carefully modulated. After optimization, the conventional photodetectors achieve broadband responsivity up to 0.3 A W −1 , high specific detectivity of 1.25 × 10 12 Jones, and fast response speed of 6.4 µs with a small bias voltage of −0.5 V. On the other hand, the inverted devices exhibit imbalanced charge transport and color discrimination, which is promising for narrowband photodetection. These distinct device performances are highly dependent on the device architecture, which is crucial for designing efficient chalcogenide-based optoelectronic devices.

Optimizing the Charge Carrier Dynamics of Thermal Evaporated TexSe1‐x Films for High‐Performance Short‐Wavelength Infrared Photodetection

“…[21] With the convenient preparation and precise thickness control of organic transport layers, devices based on organic materials exhibited excellent performance with suppressed leakage current and a high on-off ratio. [29][30][31][32] In this work, we first fabricated the devices based on inverted (p-i-n) and conventional (20-30 nm) were not sufficient to reduce the leakage current. In addition, extremely low open-circle voltage (V oc ) indicates that the depletion region and PN junction are not well-formed between C60 and Te 0.65 Se 0.35 .…”

“…[ 21 ] With the convenient preparation and precise thickness control of organic transport layers, devices based on organic materials exhibited excellent performance with suppressed leakage current and a high on–off ratio. [ 29–32 ] In this work, we first fabricated the devices based on inverted (p–i–n) and conventional (n–i–p) device structures. The inverted one consists of ITO/poly[bis(4‐phenyl)(2,4,6‐trimethylphenyl)amine] (PTAA) or poly[N,N″‐bis(4‐butylphenyl)‐N,N″‐bis(phenyl)‐benzidine] (ploy‐TPD)/Te 0.65 Se 0.35 /Fullerene‐C60/bathocuproine/Cu, and the conventional structure is ITO/SnO 2 /Te 0.65 Se 0.35 /Spiro‐OMeTAD/MoO x /Ag.…”

High-Performance and Stable Sb2S3 Thin-Film Photodetectors for Potential Application in Visible Light Communication

“…And the specific calculation data is shown in Figure S4 (Supporting Information), and the response at 530 nm under the 3 μW cm –2 device with HTL can reach a maximum of 0.34 A W –1 . The D* is also a key parameter that indicates the detection capability of the device, which is inferred based on the noise current and the responsivity, with the following equation: D * = RA 1/2 / i noise , where A is the device area and i noise is the noise current. In addition, Figure S5 (Supporting Information) shows the noise current of the devices with and without HTL.…”

Enhanced Charge Carrier Mobility of Evaporated Sb2Se3 via Post‐Treatment for High‐Speed Photodetection

“…According to our previous work, the device response time of the photodiode based on the commonly used organic transport layer spiro‐OMeTAD is limited to microseconds due to its ion migration. [ 7 ] In this work, manganese sulfide (MnS) was used as the hole transport layer to construct an all‐inorganic thin film diode of ITO/ SnO 2 / CdS/ Sb 2 Se 3 / MnS/ MoO x / Ag structure, aiming for designing high‐speed photodetectors. It is worth noting that we used SnO 2 /CdS bilayer as the electron transport layer, which could effectively reduce the parasitic absorption caused by the CdS layer.…”

“…[1] There have been studies on fast photodetectors based on organic semiconductors, metal halide perovskites, chalcogenides, and traditional semiconductors, such as silicon, germanium, and gallium arsenide. [2][3][4][5][6][7][8][9][10][11][12][13][14] Silicon-based photodetectors are widely used in commercial due to their highly mature fabrication technology and system integration. [15] However, silicon still suffers from a trade-off between detection efficiency and detection speed.…”