Modulating the blue and green luminescence in the β-Ga2O3 films

Nie, Yiyin; Jiao, Shujie; Li, Shaofang; Lü, Hongliang; Liu, Shuo; Song, Yang; Wang, Dongbo; Gao, Shiyong; Wang, Jinzhong; Li, Yongfeng

doi:10.1016/j.jallcom.2021.163431

Cited by 33 publications

(14 citation statements)

References 54 publications

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“…Gain is mostly determined by the ratio of τ to t . Because of its indirect band gap, the photogenerated electron–hole pairs have a longer τ in β-Ga 2 O 3 , resulting in a large gain. Meanwhile, due to its large hole mass, the mobility of electrons is much higher than that of holes, causing electrons to be continuously swept out and reinjected to maintain the electrical balance, further increasing gain.…”

Section: Resultsmentioning

confidence: 99%

High-Performance Solar-Blind Ultraviolet Photodetectors Based on β-Ga₂O₃ Thin Films Grown on p-Si(111) Substrates with Improved Material Quality via an AlN Buffer Layer Introduced by Metal–Organic Chemical Vapor Deposition

Gao,

Wang,

et al. 2023

ACS Appl. Mater. Interfaces

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We have achieved significantly improved device performance in solar-blind deep-ultraviolet photodetectors fabricated from β-Ga 2 O 3 thin films grown via metal− organic chemical vapor deposition (MOCVD) on p-Si(111) substrates by improving material quality through the use of an AlN buffer layer. High-structural-quality β-Ga 2 O 3 films with a (−201) preferred orientation are obtained after the introduction of the AlN buffer. Under 3 V bias, the dark current reaches a minimum of 45 fA, and the photo-to-dark current ratio (PDCR) reaches 8.5 × 10 5 in the photodetector with the metal− semiconductor−metal (MSM) structure. The peak responsivity and detectivity are 38.8 A/W and 2.27 × 10 15 cm•Hz 1/2 /W, respectively, which are 16.5 and 230 times that without the buffer layer. Additionally, benefiting from the introduction of the AlN layer, the photodetection performance of the β-Ga 2 O 3 /AlN/Si heterojunction is significantly improved. The PDCR, peak responsivity, and detectivity for the β-Ga 2 O 3 /AlN/p-Si photodetector at 5 V bias are 2.7 × 10 3 , 11.84 A/W, and 8.31 × 10 13 cm•Hz 1/2 /W, respectively. The improved structural quality of β-Ga 2 O 3 is mainly attributed to the decreased in-plane lattice mismatch of 2.3% for β-Ga 2 O 3 (−201)/AlN(002) compared to that of 20.83% for β-Ga 2 O 3 (−201)/Si(111), as well as the elimination of the native amorphous SiO x surface layer on the Si substrate during the initial growth of oxide thin films.

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Section: Resultsmentioning

confidence: 99%

High-Performance Solar-Blind Ultraviolet Photodetectors Based on β-Ga₂O₃ Thin Films Grown on p-Si(111) Substrates with Improved Material Quality via an AlN Buffer Layer Introduced by Metal–Organic Chemical Vapor Deposition

Gao,

Wang,

et al. 2023

ACS Appl. Mater. Interfaces

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“…[30][31][32][33] BL originates from another DAP recombination from a deep V O donor and the same deep acceptor. 31,34) The origin of GL is considered by the optical transitions of gallium vacancies V . Ga 2- 34) In order to discuss the fundamental MPPL process, excitation-power-dependent UVL (I UVL at 3.…”

Section: Mppl Spectral Analysesmentioning

confidence: 99%

Observation of nanopipes in edge-defined film-fed grown β-Ga₂O₃ substrate and their effect on homoepitaxial surface hillocks

Nishikawa

Goto

Murakami

et al. 2023

Jpn. J. Appl. Phys.

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β-Ga2O3 substrates and homoepitaxial films were characterized using the multiphoton excitation photoluminescence (MPPL) method. MPPL emission peaks at 3.2 eV and 3.36 eV were obtained with broad shoulders at the low energy side. MPPL images showed the presence of nanopipes in the substrate with a unique contrast. Three-dimensional MPPL imaging revealed the distribution and spatial location of the nanopipes. All the nanopipes were elongated along the [010] direction with diameters of approximately 0.4–1.0 μm and lengths of 10-30 µm. The nanopipes were aligned in the [100] and [001] directions with sub-micron spacing in the (0–10)-oriented substrate. The nanopipes were located under the hillocks at the homoepitaxial surface. The nanopipes are suggested to trigger the hillock growth by transforming into threading dislocations in the homoepitaxial film.

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“…39 Nie et al modulated the blue and green luminescence in the b-Ga 2 O 3 films. 40 Swinnich et al studied electronic applications based on flexible b-Ga 2 O 3 nanomembrane Schottky barrier diodes. 41 Besides the two-dimensional and bulk Ga 2 O 3 , devices based on van der Waals heterostructures widely broaden the applications of these two-dimensional ferroelectric materials.…”

Section: Introductionmentioning

confidence: 99%

“…39 Nie et al modulated the blue and green luminescence in the β-Ga 2 O 3 films. 40 Swinnich et al studied electronic applications based on flexible β-Ga 2 O 3 nanomembrane Schottky barrier diodes. 41…”

Section: Introductionmentioning

confidence: 99%

Predicting the Raman spectra of ferroelectric phases in two-dimensional Ga₂O₃ monolayer

Deng

2022

Phys. Chem. Chem. Phys.

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Modulating the blue and green luminescence in the β-Ga2O3 films

Cited by 33 publications

References 54 publications

High-Performance Solar-Blind Ultraviolet Photodetectors Based on β-Ga₂O₃ Thin Films Grown on p-Si(111) Substrates with Improved Material Quality via an AlN Buffer Layer Introduced by Metal–Organic Chemical Vapor Deposition

High-Performance Solar-Blind Ultraviolet Photodetectors Based on β-Ga₂O₃ Thin Films Grown on p-Si(111) Substrates with Improved Material Quality via an AlN Buffer Layer Introduced by Metal–Organic Chemical Vapor Deposition

Observation of nanopipes in edge-defined film-fed grown β-Ga₂O₃ substrate and their effect on homoepitaxial surface hillocks

Predicting the Raman spectra of ferroelectric phases in two-dimensional Ga₂O₃ monolayer

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Modulating the blue and green luminescence in the β-Ga2O3 films

Cited by 33 publications

References 54 publications

High-Performance Solar-Blind Ultraviolet Photodetectors Based on β-Ga2O3 Thin Films Grown on p-Si(111) Substrates with Improved Material Quality via an AlN Buffer Layer Introduced by Metal–Organic Chemical Vapor Deposition

High-Performance Solar-Blind Ultraviolet Photodetectors Based on β-Ga2O3 Thin Films Grown on p-Si(111) Substrates with Improved Material Quality via an AlN Buffer Layer Introduced by Metal–Organic Chemical Vapor Deposition

Observation of nanopipes in edge-defined film-fed grown β-Ga2O3 substrate and their effect on homoepitaxial surface hillocks

Predicting the Raman spectra of ferroelectric phases in two-dimensional Ga2O3 monolayer

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High-Performance Solar-Blind Ultraviolet Photodetectors Based on β-Ga₂O₃ Thin Films Grown on p-Si(111) Substrates with Improved Material Quality via an AlN Buffer Layer Introduced by Metal–Organic Chemical Vapor Deposition

High-Performance Solar-Blind Ultraviolet Photodetectors Based on β-Ga₂O₃ Thin Films Grown on p-Si(111) Substrates with Improved Material Quality via an AlN Buffer Layer Introduced by Metal–Organic Chemical Vapor Deposition

Observation of nanopipes in edge-defined film-fed grown β-Ga₂O₃ substrate and their effect on homoepitaxial surface hillocks

Predicting the Raman spectra of ferroelectric phases in two-dimensional Ga₂O₃ monolayer